基于NVM的存储安全综述

大数据时代的来临为存储系统提供了新的机遇,同时也提出了新的挑战。传统的基于动态随机存储(DRAM)的内存架构面临着容量、能耗、可靠性等方面的问题;新型非易失存储器件(Non-Volatile Memory,NVM)具有非易失、字节寻址、空闲能耗低等优势,可以作为外存、内存或存储级内存(Storage Class Memory,SCM),为未来存储系统的变革提供了新选择,但同时也存在一些安全问题。NVM器件本身的耐久性有限,频繁对某一位置进行写操作时会造成该位置磨损,从而缩短设备的寿命;同时,由于具有非易失性,NVM被用作内存时,断电后数据不会丢失,攻击者可以通过窃取数据来提取敏感信息或对数据进行篡改;当NVM与DRAM构成混合内存时,可能会产生指针指向不明等问题;NVM作为SCM时,应用程序通过存取(load/store)接口直接对其进行访问,绕过了文件系统等权限管理和一致性管理机制。针对这些问题,文中总结了磨损均衡、减少写操作、减少写入量、内存加密、设计一致性机制、设计权限管理机制等解决办法;最后从硬件、操作系统以及编程模型层面探讨了 仍须关注的NVM安全问题。     

Charge trapping models of resistance switching in organic bistable devices with embedded nanoparticles

We discuss three different models of switching between the high conductivity and low conductivity state in organic bistable devices (OBD) with embedded nanoparticles. All models assume the same basic mechanism: charge trapping and de-trapping in metal nanoparticles. We show trapped charges can both induce an increase or a reduction of the total current depending on device configurations. The influence of energy disorder is investigated.     

Effect of feed pH and non-volatile dairy components on flavour concentration by pervaporation

Pervaporation was used to concentrate acids, esters and ketones in model flavour mixtures. The characteristics of the feed mixture (pH and presence of dairy ingredients) were found to alter the pervaporation behaviour of the flavour compounds. This effect was partially due to a reduction in driving force (caused by a lower activity in the aqueous phase as evidenced by the mole fraction in the headspace above the feed), and partially due to the sorption and diffusion behaviour of the flavour compounds. Acids were concentrated most effectively at pH 3.5 or below, when they were in their undissociated forms; their enrichment factors were reduced by up to 84% when the pH was increased to 7. Milk fat reduced the pervaporation enrichment of flavour compounds by up to 95%, as the flavour compounds partitioned into the fat phase and hence did not pass through the membrane as easily. In the presence of either milk protein isolate or lactose, enrichment factors were reduced by 45-67% for short-chain esters and ketones, for which permeation through the membrane was limited by the sorption step.     

Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories

We present in this article a review of the status of thin film ferroelectric materials for nonvolatile memories. Key materials issues relevant to the integration of these materials on Si wafers are discussed. The effect of film microstructure and electrode defect chemistry on the ferroelectric properties relevant to a high density nonvolatile memory technology are discussed. The second part of this review focuses on approaches to integrate these capacitor structures on a filled poly-Si plug which is a critical requirement for a high density memory technology. Finally, the use of novel surface probes to study and understand broadband polarization dynamics in ferroelectric thin films is also presented.     

巨磁电阻随机存取存储器

用巨磁电阻(GMR)材料制成的磁电子学新器件,已开始在计算机存储领域成功地获得应用。对巨磁电阻用于计算机随机存取存储器的工作原理、性能特点及研究现状和发展趋势作了阐述。     

Multilevel charge storage in Si nanocrystals arranged in double-dot-layers within SiO2

We investigated charging/discharging characteristics of a MOS structure with two layers of Si-nanocrystals (NCs) embedded in the SiO₂ dielectric. The two-dimensional (2D) arrays of nanocrystals, of sizes 3 and 5 nm in the lower and upper NCs layer, respectively, were fabricated by low pressure chemical vapor deposition (LPCVD) of amorphous Si (a-Si), followed by oxidation/annealing. The tunnel oxide was 3.5 nm thick. Successive charging of the NCs layers by both electrons and holes injected from the substrate was clearly demonstrated by the observed steps in the flatband voltage shift (ΔV_FB) as a function of the applied positive (electrons) or negative (holes) pulses on the gate, thus opening the potential for multiple bit operation of the memory. Discharging of the structure by pulses of opposite sign was consistently obtained. The current-voltage (I-V) curves exhibited two transient peaks at voltages corresponding to the two steps in ΔV_FB vs. V_gate that were attributed to a displacement current from the substrate to the nanocrystal layers. Clear improvement of charge retention in the double-nanocrystal layer structure compared to the single one was obtained, opening the possibility for lowering the gate oxide thickness of the NC memory without compromising device reliability.     

UV assisted non-volatile memory behaviour using Copper (II) phthalocyanine based organic field-effect transistors

In this report, we have demonstrated the optical non-volatile memory characteristics using CuPc OFET. The memory operation was comprehensively demonstrated with different programming conditions. It was found that the programming of CuPc OFET with an electric pulse at the gate terminal under UV-light photo-illumination compared to other programming conditions, could substantially increase the memory window due to massive charge trapping in the polymer electret layer, which causes shift in the device transfer characteristics from low-conduction state (“OFF state”, or logic 0) to high conduction state (“ON state”, or logic 1) at V_GS = 0V. From device operation at −50V, a memory window of greater than 45V could be achieved by applying a programming voltage of +70 V at the gate terminal under UV-light photo-illumination. Moreover, it was completely erased by applying −100 V at the gate terminal in dark.     

Photoconductivity of Hf-based binary metal oxides

In order to explore the possibility of bandgap engineering in binary oxide insulators we studied photoconductivity of nanometer-thin Hf oxide layers containing different fractions of cations of another sort (Si, Al, Sr, or Ce) deposited on (1 0 0)Si. The smallest bandgaps of the Hf:Al and Hf:Ce oxides are close to the values found in elemental Al₂O₃ (6-6.2 eV) and HfO₂ (5.6 eV), respectively, and show little sensitivity to the concentration of Al or Ce. This result suggests that the oxide sub-network with the largest bandgap preserves its gap energy, while development of a narrower gap is prevented, likely, by dilution of the second cation sub-network. In Hf:Si oxide samples photoconductivity thresholds of 5.6-5.9 eV, corresponding to the bandgap of HfO₂, were observed for all studied Si concentrations, suggesting phaseseparation to occur during deposition. Photoconductivity of SrHfO₃ exhibits two thresholds, at 4.4 and 5.7 eV, which are close to the bandgaps of elemental SrO₂ and HfO₂, respectively. These gap values indicate the phase separation also to occur in this binary oxide. Through this work photoconductivity is demonstrated to be a feasible method to trace phase separation in binary oxides, even in nanometer-thin layers.     

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

The impact of 3D device architecture in aggressively scaled embedded non-volatile memories has been investigated by means of experiments and 3D TCAD simulations. A complete 3D calibration methodology covering DC and transient operating regimes has been introduced and validated against measurements for different technological options. This approach has been employed to determine the key features for device optimization. In particular, shallow trench isolation corners around the active area have been identified as critical regions of the memory cell for program and erase operations, as well as for gate coupling ratio optimization.     

高k介质在浮栅型非挥发性存储器中的应用

随着微电子技术节点不断向前推进,基于传统浮栅结构的非挥发性存储器(NVM)技术遇到严重的技术难点,其中最主要的问题是SiO2隧穿层已经接近厚度极限,很难继续减薄.作为改进措施,引入高k介质作为新型隧穿层材料.文章介绍了高k材料的研究现状和在NVM器件中应用所取得的进展;最后,对高k介质进一步应用的研究趋势进行了展望.