利用多阱结构改善有机电致发光器件效率

将N,N'-bis-(1-naphthy1)-N,N'-dipheny-1,1'bipheny1 4,4'-diamine(NPB)与bathocuproine(BCP)2种材料以交叠沉积方式组成一种周期性结构作为空穴注入层,制备了结构为ITO/[NPB/BCP]n/AlQ/LiF/Al的有机电致发光器件(OLED).通过改变空穴注入层阱状结构的重复周期数n,可改变载流子复合区域,进而获得近白光和绿光发射.由于该结构能获得更好的载流子注入平衡,具有交叠结构空穴注入层的近白光器件在15 V时亮度达到3 433.8 cd/m2,在电流密度为60.9 mA/cm2时最大发光效率为2.26 cd/A.当周期数n大于3时得到绿光发射,与单空穴注入层ITO/NPB/AlQ/LiF/Al器件相比,交叠空穴注入层可将器件的最大亮度由2 512.8 cd/m2提高到866 1.0 cd/m2,最大亮度效率在20 mA/cm2时达到4.94 cd/A.     

无氧溅射方法制备OLED的ITO透明电极

采用氧化铟锡(ITO)合金材料作为靶材,通过射频磁控溅射制备ITO膜.将获得的ITO膜应用于结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(100 nm)的有机电致发光器件(OLED),得到了最大亮度为11560 cd/m2(电压为25V)、最大效率为2.52 cd/A(电压为14 V)的结果.为了获得双面发光,制作了结构为ITO/m-MTDATA(30 nm)/NPB(20 nm)/Alq3(50 nm)LiF(0.8 nm)/Al(20 nm)/ITO(50 nm)的器件,其阳极出光的最大亮度为14460 cd/m2(电压为18V)、最大效率为2.16 cd/A(电压为12V),阴极出光的最大亮度为1 263 cd/m2(电压为19 V)、最大效率为0.26 cd/A(电压为16V).     

Poly(3‐hexylthiophene) Fibers for Photovoltaic Applications

A new method for the preparation of active layers of polymeric solar cells without the need for thermal post‐treatment to obtain optimal performance is presented. Poly(3‐hexylthiophene) (P3HT) nanofibers are obtained in highly concentrated solutions, which enables the fabrication of nanostructured films on various substrates. Here, the preparation of these fibers along with their characterization in solution and in the solid state is detailed. By mixing these nanofibers with a molecular acceptor such as [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) in solution, it is possible to obtain in a simple process a highly efficient active layer for organic solar cells with a demonstrated power conversion efficiency (PCE) of up to 3.6 %. The compatibility of the room‐temperature process developed herein with commonly used plastic substrates may lead to applications such as the development of large‐area flexible solar cells.     

声表面波器件用零温度系数基片材料

SAW器件要求具有低延时温度系数、高机电耦合系数和高传播特性的良好基片材料。迄今为止,还没有一种材料能满足上述要求,为此,人们进行了大量的努力来寻求解决。本文主要叙述具有零温度系数的LST一切石英、双旋转切LiNbO_3、63.6°Y一切LiTaO_3单晶新切型和几种层状结构基片材料的制法和性能。并列举了实验器件的特性。     

微纳米PIN电光调制器的优化

在微纳米PIN电光调制器的基础上,分析了载流子浓度对其调制特性的影响。根据注入调制区载流子平均浓度随时间变化关系,采用在驱动信号中加入正反向预加重电压的调制电压方式,不仅可以提高注入载流子浓度,而且可以缩短反向抽取载流子所用的时间,从而有效提高电光调制器的调制速度;详细分析了PIN电光调制器结构中内脊高度H、外脊高度h,波导脊宽W以及重掺杂区到波导的距离Ws等参数对其调制特性的影响;最终根据数据的分析,给出了优化后的参数,制作了电光调制器并进行了测试,测试结果验证了文中数据分析的正确性。     

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

In the present communication we have presented a detailed theoretical analysis of the performance of the sub-micron device in the presence of the discontinuity at the Si–SiO₂ interface. It is assumed that due to interface discontinuity a potential develops at the edges (Source/Drain) in addition to the built-in-potential. This potential, called Edge Potential, measures directly the extent of the interface roughness. The effect of this potential is more critical in the case of short channel device where drain and source are in close proximity. Our analysis shows that the discontinuity is dominant at the edges but not in the channel. Drive current as well as saturation transconductance decreases in the presence of edge potential. These results suggest that the performance of the device degrades due to the interface roughness. Effect of interface roughness near the edges can be reduced at high gate voltage but it will result more interface roughness scattering.     

Optimization of polymer light emitting devices using TiOx electron transport layers and prism sheets

The internal and external efficiency of polymer light emitting devices were found can be simultaneously improved by insertion a high refractive index material, titanium oxide (TiO_x), to the emission layer and a prism sheet attached to the substrate. The TiO_x layer increased the internal efficiency due to a better electron injection and hole confinement. However, it led a wider angular emission profile with more photons trapped in the substrate. By using the prism sheet, those trapped light was efficiently coupled to the air. The extraction efficiency enhancement was increased from 33.1% to 54.4% and the overall current efficiency was improved up to 86%.     

Cyclopentadithiophene–benzothiadiazole oligomers: Synthesis via direct arylation,X-ray crystallography,optical properties,solution casted field-effect transistor and photovoltaic characteristics

This article reports the synthesis, crystallographic structure and OFET and OPV performance of the conjugated oligomer of cyclopentadithiophene (CPDT) with benzothiadiazole (BT). Synthesis of the oligomer composed of the CPDT-BT-CPDT sequence is accomplished using direct arylation reactions. Theoretical and experimental X-ray single crystallography confirms that two CPDT-BT-CPDT molecules are not entirely disordered, but are actually stacking directly across each other at the central BT units with an intermolecular distance of 3.61 Å, providing valuable insight into the polymer bulk structure. The performance of the oligomer in OFET devices is investigated by fabricating bottom gate top contact devices and demonstrates a hole mobility of 5.0 × 10⁻³ cm² V⁻¹ s⁻¹. OPV devices of the oligomer blended with PC₆₁BM and PC₇₁BM show power conversion efficiency (PCE) of 1.61%. One potential use for the oligomer could be as a sensitiser in a ternary blend with P3HT–PC₆₁BM or PCPDTBT–PC₆₁BM OPVs; the PCE can be relatively increased by 3–9% depending on concentration, primarily as a result of increased short circuit current density.     

Improved Performance of Molecular Bulk‐Heterojunction Photovoltaic Cells through Predictable Selection of Solvent Additives

Solvent additives provide an effective means to alter the morphology and thereby improve the performance of organic bulk‐heterojunction photovoltaics, although guidelines for selecting an appropriate solvent additive remain relatively unclear. Here, a family of solvent additives spanning a wide range of Hansen solubility parameters is applied to a molecular bulk‐heterojunction system consisting of an isoindigo and thiophene containing oligomer as the electron donor and [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PC₆₁BM) as the electron acceptor. Hansen solubility parameters are calculated using the group contribution method and compared with the measured solubilities for use as a screening method in solvent additive selection. The additives are shown to alter the morphologies in a semipredictable manner, with the poorer solvents generally resulting in decreased domain sizes, increased hole mobilities, and improved photovoltaic performance. The additives with larger hydrogen bonding parameters, namely triethylene glycol (TEG) and N‐methyl‐2‐pyrrolidone (NMP), are demonstrated to increase the open circuit voltage by ~0.2 V. Combining a solvent additive observed to increase short circuit current, poly(dimethylsiloxane), with TEG results in an increase in power conversion efficiency from 1.4 to 3.3%.     

光通信技术的最新发展动态

本文在报告了美国光通信市场格局之后,介绍了未来高速大容量数据传输系统ＤＷＤＭ的发展状况,并预测ＤＷＤＭ的市场规模将从１９９９年的４０亿美元扩大到５年后的２１５亿美元。在文章第二部分介绍了新型光通信元件,凶手对应波长１４５０ｎｍ～１６５０ｎｍ的宽带光通信单向波导管、无需温控的２．５Ｇｂｉｔ／ｓ半导体激光元件、１０Ｇｂｉｔ／ｓ光信号传输器和５００Ｍｂｉｔ／ｓ光收发信器。