可见光变角度带通滤光膜研制

以薄膜光学为背景,介绍了可见光波段变角度带通滤光膜的用途、设计与制备方法。基于波动光学原理,首先分析了带通滤光膜的光学特性以及变角度使用的难点,其次讨论了0°~33°入射时薄膜选材、测试、工艺制备等研究过程中的主要技术问题。利用薄膜软件进行优化计算后,结合光学控制与离子辅助工艺得到了吸收低、偏移量小与附着力良好的薄膜。目前相关的技术应用在地形勘测相机中达到了空间变角度高分辨率成像的效果。     

高辐射强度的带THz扼流圈的偶极天线阵列模拟分析

为了提高太赫兹辐射强度, 设计了带THz扼流圈的偶极天线阵列.模拟结果表明, 增加直线阵的阵元数对平均匹配效率影响很小, 却能线性增加相干辐射强度.加入THz扼流圈可减小进入到传输线的交流分量, 进而减小共振频率的偏移, 使平均匹配效率提升了两倍.相比于网格排列的平面阵, 交错排列的阵元在垂直方向上具有更小的耦合, THz发射谱更窄.通过使用聚酰亚胺透镜代替硅透镜, 可有效提高输入电阻, 并将总效率由25%提高到35%.     

PEI/PMMA共混有机聚合物的成膜性和对硫化氢气体的响应

采用主客掺杂的方法制备PEI/PMMA共混有机聚合 物,并采用旋涂的方法研究了共混有机聚合物的成膜特性,包括薄膜厚度、平整度与旋涂薄 膜转速的关系,测量发现匀胶机 转速越高薄膜厚度越均匀,高速为1500r/min 时薄膜最大厚度差为0.626μm。有机聚合物 薄 膜的紫外透过光谱表明共混有机聚合物所成的薄膜对H₂S气体有良好的响应,当混合液中 含有0.04g的PEI时,紫外透射率由86.81%下 降到55.54%,非常明显。紫外吸收光谱表明 薄膜和低浓度H₂S气体的反应不明显,但是对高浓度的H₂S有响应。通过高温处理与H₂S气体反应后的薄膜,可以增大薄膜的紫外吸收强度。     

TiO2多孔膜上水热合成ZnO结构及其光电性能

The synthesis of ZnO architecture on a fluorine-doped SnO_2(FTO) conducting glass pre-coated with nanoporous TiO_2 film has been achieved by a one-step hydrothermal method at a temperature of 70℃.The effect of the reaction time on the morphology of the ZnO architecture has been investigated,and a possible growth mechanism for the formation of the ZnO architecture is discussed in detail.The morphology and phase structures of the as-obtained composite films have been investigated by field-emission scanning...     

用溶胶-凝胶法制备的Cu2Bi2Cr2O8薄膜 及其光学和铁磁性能研究

以硝酸铜Cu(NO₃)₂·3H₂O、硝酸铬Cr(NO₃)₃·9H₂O、硝酸铋Bi(NO₃)₃·3H₂O和乙二醇为原料,利用溶胶-凝胶工艺在石英衬底上制备了纳米Cu₂Bi₂Cr₂O₈薄膜。通过X射线衍射(X-Ray Diffraction, XRD)和拉曼测试对样品进行了表征。结果表明,Cu₂Bi₂Cr₂O₈薄膜具有良好的光学特性,其禁带宽度为1.49 eV;在磁性测试方面,Cu₂Bi₂Cr₂O₈薄膜呈现出了良好的铁磁性。     

Chemical compositions and optical properties of HfOxNy thin films at different substrate temperatures

High-k HfO_xN_y thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N₂/Ar/O₂ ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsometry (SE) with photon energy 0.75–6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (E_g) decreases with an increase in substrate temperature.     

CuIn1−xGaxSe2‐based thin‐film solar cells by the selenization of sequentially evaporated metallic layers

Polycrystalline CuIn_1−xGa_xSe₂ (CIGS) thin films were deposited by the non‐vacuum, near‐atmospheric‐pressure selenization of stacked metallic precursor layers. A study was carried out to investigate the influence of significant factors of the absorber on the solar cells performance. An efficiency enhancement was obtained for Cu/(In+Ga) atomic ratios between 0·93 and 0·95. The slope of the observed energy bandgap grading showed a strong influence on the V_OC and the short circuit current density J_SC. An increase of the Ga content in the active region of the absorber was achieved by the introduction of a thin Ga layer on the Mo back contact. This led to an improvement of efficiency and V_OC. Furthermore, an enhanced carrier collection was detected by quantum efficiency measurements when the absorber layer thickness was slightly decreased. Conversion efficiencies close to 10% have been obtained for these devices. Copyright © 2005 John Wiley & Sons, Ltd.     

Highly‐efficient Cd‐free CuInS2 thin‐film solar cells and mini‐modules with Zn(S,O) buffer layers prepared by an alternative chemical bath process

Recent progress in fabricating Cd‐ and Se‐free wide‐gap chalcopyrite thin‐film solar devices with Zn(S,O) buffer layers prepared by an alternative chemical bath process (CBD) using thiourea as complexing agent is discussed. Zn(S,O) has a larger band gap (E_g = 3·6–3·8 eV) than the conventional buffer material CdS (E_g = 2·4 eV) currently used in chalcopyrite‐based thin films solar cells. Thus, Zn(S,O) is a potential alternative buffer material, which already results in Cd‐free solar cell devices with increased spectral response in the blue wavelength region if low‐gap chalcopyrites are used. Suitable conditions for reproducible deposition of good‐quality Zn(S,O) thin films on wide‐gap CuInS₂ (‘CIS’) absorbers have been identified for an alternative, low‐temperature chemical route. The thickness of the different Zn(S,O) buffers and the coverage of the CIS absorber by those layers as well as their surface composition were controlled by scanning electron microscopy, X‐ray photoelectron spectroscopy, and X‐ray excited Auger electron spectroscopy. The minimum thickness required for a complete coverage of the rough CIS absorber by a Zn(S,O) layer deposited by this CBD process was estimated to ∼15 nm. The high transparency of this Zn(S,O) buffer layer in the short‐wavelength region leads to an increase of ∼1 mA/cm² in the short‐circuit current density of corresponding CIS‐based solar cells. Active area efficiencies exceeding 11·0% (total area: 10·4%) have been achieved for the first time, with an open circuit voltage of 700·4 mV, a fill factor of 65·8% and a short‐circuit current density of 24·5 mA/cm² (total area: 22·5 mA/cm²). These results are comparable to the performance of CdS buffered reference cells. First integrated series interconnected mini‐modules on 5 × 5 cm² substrates have been prepared and already reach an efficiency (active area: 17·2 cm²) of above 8%. Copyright © 2006 John Wiley & Sons, Ltd.     

电泳法制备ZnO纳米薄膜研究

报导了一种简单而有效的制备ZnO纳米薄膜的方法。以纳米ZnO和Mg(NO3).6H2O的异丙醇溶液作为电泳膜的沉积液,采用电泳法在ITO衬底玻璃上制备了高质量的ZnO纳米薄膜,并用透射电镜(TEM)、X射线衍射(XRD)、Raman谱和光致发光(PL)谱等对所制得的薄膜进行了表征。XRD表明,ZnO电泳膜是多晶膜且具有纤维锌矿结构;Raman谱和PL谱表明,ZnO纳米薄膜具有较强的紫外发射,其峰值波长为384 nm,而它的可见发射几乎观察不到,表明ZnO电泳膜是高质量的。     

光纤束耦合LD输出光束的空间耦合技术研究

基于多模大芯径光纤的端面出射光场可视为高斯分布,光纤束耦合LD各纤芯出射的光束互不相干;对光纤束耦合LD输出光束通过空间耦合光学系统后的光强分布进行了数值模拟和实验研究,模拟计算结果和实验结果的规律基本吻合。结果表明,用单个薄凸透镜组成耦合系统时,耦合后的光束在焦平面上中心光强最大,光斑尺寸最小;随着薄透镜焦距的增大,焦平面上的光斑尺寸呈线性增大,而中心光强急剧减小。