Correcting for contact geometry in Seebeck coefficient measurements of thin film devices

Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi)conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirable from a signal-to-noise perspective may induce systematic errors in the measured value of S, S_m, by a factor 3 or more. The enhancement of S_m by the device geometry is related to competing conduction paths outside the region between the electrodes. We derive a universal scaling curve that allows correcting for this and show that structuring the semiconductor is not needed for the optimal electrode configuration, being a set of narrow, parallel strips.     

The enhancement of electrical and optical properties of PEDOT:PSS using one-step dynamic etching for flexible application

The conductivity enhancement of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) by dynamic etching process was investigated to introduce the outstanding and simplest method for soft electronics. Four different samples which were pristine PEDOT:PSS, PEDOT:PSS doped with 5 wt.% DMSO, PEDOT:PSS with dipping process, and PEDOT:PSS with dynamic etching process were prepared to compare the properties such as conductivity, morphology, relative atomic percentage, and topography. All samples were characterized by four point probe, current atomic force microscopy (C-AFM), X-ray photoelectron spectroscopy (XPS), and UV–visible spectroscopy. The conductivity of the sample with dynamic etching process showed the highest value as 1299 S/cm among four samples. We proved that the dynamic etching process is superior to remove PSS phase from PEDOT:PSS film, to flow strong current through entire surface of PEDOT:PSS, and to show the smoothest surface (RMS 2.28 nm). XPS analysis was conducted for accurate chemical and structural surface environments of four samples and the relative atomic percentage of PEDOT in the sample with dynamic etching was the highest as 29.5%. The device performance of the sample with the dynamic etching process was outstanding as 10.31 mA/cm² of J_sc, 0.75 eV of V_oc, 0.46 of FF, and 3.53% of PCE. All properties and the device performance for PEDOT:PSS film by dynamic etching process were the most excellent among the samples.     

Over 16.7% Efficiency Organic‐Silicon Heterojunction Solar Cells with Solution‐Processed Dopant‐Free Contacts for Both Polarities

Realization of synchronous improvement in optical management and electrical engineering is necessary to achieve high‐performance photovoltaic device. However, inherent challenges are faced in organic‐silicon heterojunction solar cells (HSCs) due to the poor contact property of polymer on structured silicon surface. Herein, a remarkable efficiency boost from 12.6% to over 16.7% in poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate)/n‐silicon (PEDOT:PSS/n‐Si) HSCs by independent optimization of hole‐/electron‐selective contacts only relying on solution‐based processes is realized. A bilayer PEDOT:PSS film with different functionalizations is utilized to synchronously realize conformal contact and effective carrier collection on textured Si surface, making the photogenerated carriers be well separated at heterojunction interface. Meanwhile, fullerene derivative is used as electron‐transporting layer at the rear n‐Si/Al interface to reduce the contact barrier. The study of carriers' transport and independent optimization on separately contacted layers may lead to an effective and simplified path to fabricate high‐performance organic‐silicon heterojunction devices.     

Highly Customizable All Solution–Processed Polymer Light Emitting Diodes with Inkjet Printed Ag and Transfer Printed Conductive Polymer Electrodes

Inkjet and transfer printing processes are combined to easily form patterned poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) films as top anodes of all solution–processed inverted polymer light emitting diodes (PLEDs) on rigid glass and flexible plastic substrates. An adhesive PEDOT:PSS ink is formulated and fully customizable patterns are obtained using the inkjet printing process. In order to transfer the patterned PEDOT:PSS films, adhesion properties at interfaces during multistep transfer printing processes are carefully adjusted. The transferred PEDOT:PSS film on the plastic substrates shows not only a sheet resistance of 260.6 Ω/□ and a transmittance of 92.1% at 550 nm wavelength but also excellent mechanical flexibility. The PLEDs with spin‐coated functional layers sandwiched between the transferred PEDOT:PSS top anodes and inkjet‐printed Ag bottom cathodes are fabricated. The fabricated PLEDs on the plastic substrates show a high current efficiency of 10.4 cd A^?1 and high mechanical stability. It is noted that because both Ag and PEDOT:PSS electrodes can be patterned with a high degree of freedom via the inkjet printing process, highly customizable PLEDs with various pattern sizes and shapes are demonstrated on the glass and plastic substrates. Finally, with all solution process, a 5 × 7 passive matrix PLED array is demonstrated.     

The application of single-layer graphene modified with solution-processed TiOx and PEDOT:PSS as a transparent conductive anode in organic light-emitting diodes

There are many challenges for a direct application of graphene as the electrodes in organic electronics due to its hydrophobic surfaces, low work function (WF) and poor conductance. The authors demonstrate a modified single-layer graphene (SLG) as the anode in organic light-emitting diodes (OLEDs). The SLG, doped with the solution-processed titanium suboxide (TiO_x) and poly(3,4-ethylenedio-xythiophene)/poly(styrene sulfonic acid) (PEDOT:PSS), exhibits excellent optoelectronic characteristics with reduced sheet resistance (R_sq), increased work function, as well as over 92% transmittance in the visible region. It is notable that the R_sq of graphene decreased by ∼86% from 628 Ω/sq to 86 Ω/sq and the WF of graphene increased about 0.82 eV from 4.30 eV to 5.12 eV after a modification by using the TiO_x–PEDOT:PSS double interlayers. In addition, the existence of additional TiO_x and PEDOT:PSS layers offers a good coverage to the PMMA residuals on SLG, which are often introduced during graphene transfer processes. As a result, the electrical shorting due to the PMMA residues in the device can be effectively suppressed. By using the modified SLG as a bottom anode in OLEDs, the device exhibited comparable current efficiency and power efficiency to those of the ITO based reference OLEDs. The approach demonstrated in this work could potentially provide a viable way to fabricate highly efficient and flexible OLEDs based on graphene anode.     

Photolithographic patterning of PEDOT:PSS with a silver interlayer and its application in organic light emitting diodes

A patterning scheme for poly(3,4-ethylenedioxythio-phene):poly(styrenesulfonate) (PEDOT:PSS) is reported. With a silver interlayer, the conductive PEDOT:PSS film can be patterned down to micrometer scales by traditional photolithography, and this patterning scheme can be applied on large-area flexible substrates. Through systematical investigations, the patterning processes have no obvious influence on both the bulk and surface properties of PEDOT:PSS films. Efficient organic light emitting diodes (OLEDs) are realized based on this patterned PEDOT:PSS anode, and they show comparable performance to those devices with an indium tin oxide (ITO) anode. High-resolution OLED pixel arrays are also demonstrated. Our interlayer approach here has an advantage of patterning PEDOT:PSS with high resolution and large scale, and it is also compatible with traditional photolithographic processes which substantially save the capital cost. Results indicate that the photographically patterned conductive PEDOT:PSS film becomes a promising candidate for eletrical eletrode material in organic electronic applications.     

Electrical characteristics of ink-jet printed, all-polymer electrochemical transistors

We report on the fabrication and characterization of inkjet-printed, all-Organic ElectroChemical Transistors (OECTs) entirely realized by a conducting polymer, namely poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS). The transistors utilized saline as the electrolyte and exhibited output characteristics typical for operation in depletion regime. The transfer characteristics could be tuned on the basis of device geometry, with the ratio between the area of the channel and the area of the gate electrode determining the transconductance. This work paves the road for the low-cost, print-on-demand fabrication of circuits for applications in bio-sensors and disposable electronics.     

Enhanced power factor of poly (3,4-ethyldioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)/RTCVD graphene hybrid films

The thermoelectric generator has been an attractive alternative power source to operate a wireless sensor node. Usually, inorganic compounds are most often used in thermoelectric devices, and hence, are extensively studied due to their superior thermoelectric performance. We have investigated a novel interfacial technique to fabricate a hybrid film of highly conductive PEDOT:PSS (poly 3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) and graphene. Organic materials PEDOT doped with PSS exhibits outstanding electrical properties due to its high conductivity, low bandgap, and energy migration. Furthermore, we utilized graphene fabricated by rapid thermal chemical vapor deposition (RTCVD) as a thermoelectric material. Our results show that the interfacial technique between substrate and hybrid film could be clearly improved due to the UV plasma treatment. The thermoelectric hybrid film of PEDOT:PSS and RTCVD graphene (P/RTG) exhibited an enhanced power factor of 56.28 μW m⁻¹ K⁻² with a Seebeck coefficient of 54.0 μV K⁻¹.     

Solution processable PEDOT:PSS based hybrid electrodes for organic field effect transistors

We report high performance solution processed conductive inks used as contact electrodes for printed organic field effect transistors (OFETs). Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) electrodes show highly improved very low sheet resistance of 65.8 ± 6.5 Ω/square (Ω/□) by addition of dimethyl sulfoxide (DMSO) and post treatment with methanol (MeOH) solvent. Sheet resistance was further improved to 33.8 ± 8.6 Ω/□ by blending silver nanowire (AgNW) with DMSO doped PEDOT:PSS. Printed OFETs with state of the art diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT) semiconducting polymer were demonstrated with various solution processable conductive inks, including bare, MeOH treated PEDOT:PSS, single wall carbon nanotubes, and hybrid PEDOT:PSS-AgNW, as the source and drain (S/D) electrode by spray printing using a metal shadow mask. The highest field effect mobility, 0.49 ± 0.03 cm² V⁻¹ s⁻¹ for DPPT-TT OFETs, was obtained using blended AgNW with DMSO doped PEDOT:PSS S/D electrode.     

State‐of‐the‐Art Neutral Tint Multichromophoric Polymers for High‐Contrast See‐Through Electrochromic Devices

Two new multichromophoric electrochromic polymers featuring a conjugated EDOT/ProDOT copolymer backbone (PXDOT) and a reversible Weitz‐type redox active small molecule electrochrome (WTE) tethered to the conjugated chain are reported here. The careful design of the WTEs provides a highly reversible redox behavior with a colorless red switching that complements the colorless blue switching of the conjugated backbone. Subtractive color mixing successfully provides high performing solution processable polymeric layers with colorless neutral tint switchable limiting states for application in see‐through electrochromic devices. Design, synthesis, comprehensive chemical and spectroelectrochemical characterization as well as the preparation of a proof‐of‐concept device are discussed.