基于压电陶瓷驱动器(PZT)驱动的二维微动工作台系统及控制方法的研究

介绍了基于PZT驱动的二维微动工作台，该微动台采用双柔性平行四连杆结构。用ANSYS对其进行有限元分析，使用自制的电容位移传感器进行位移检测，采用前馈与模糊控制相结合的复合控制方法对系统进行控制，结果表明：该控制方法既具有开环控制的稳定性，又具有闭环控制高精度的特点。实验证明了该方法的有效性。     

压电发电器建模研究

压电发电器的优化设计必须以模型为基础。提出了一种新的压电发电器模型建立方法,运用该方法分别推导出2种结构的压电发电器的性能参数表达式,实验数据与表达式计算结果比较吻合,证明表达式可以用于压电发电器的性能预测。通过对输出参数表达式进行深入讨论,得出压电发电器的一般特性和相关参数与发电器性能参数之间的关系,可指导压电发电器的优化设计。     

一种闭环微纳定位扫描系统设计

针对小推力压电陶瓷的特性,提出了一种闭环微纳定位扫描系统设计。该系统以单片机80C196KC为核心,使用12位A／D转换器MAX120和12位D／A转换器DA7521做D／A转换,模拟驱动部分采用前置低压误差运放和后置高压精密运放组成双级放大模块;控制部分采用Fuzzy-PID复合控制算法进行非线性处理,很好地改善了压电陶瓷的迟滞、蠕变、非线性等不足,且提高了控制系统的精度。将本系统应用于白光相移干涉检测,实验结果表明：闭环电压控制的最大误差为18mV,置位重复精度为6nm,系统相对误差为0．15％;在位移量为10μm的时间一位移阶跃响应曲线中阶越响应时间约为20ms,且在电压为80V的蠕动曲线中,3min内的蠕变为3．6％,3min以后变化开始缓慢。     

Pb(Zr0.52Ti0.48)O3 nanotubes synthesis and infrared absorption properties

Herein a useful methodology to synthesize the lead zirconate titanate (PZT) nanotubes via a dip-coating deposition process with anodic aluminum oxide (AAO) template is proposed. The nano-porous AAO templates were produced using a controlled two-step electrochemical anodization technique. The PZT/AAO composite was formed using the dip-coating wetting technique. The prepared PZT precursor solution was driven into the nanopore channels of AAO template under the driving force of capillary action, subsequently the sintering process of the as-filled templates was carefully tuned to obtain Pb(Zr_0.52Ti_0.48)O₃ nanotubes of crystalline tetragonal phase with uniform pore size and ordered arrange. Fourier transform infrared spectroscopy (FTIR) results show that in the 1200–1900 cm⁻¹ band, the composite structure of PZT/AAO has obvious absorption peaks at 1471.56 cm⁻¹ and 1556.09 cm⁻¹, the absorption intensity of the composite structure is about six times of pure AAO template. The unusual optical properties found in PZT/AAO composite will stimulate further theoretical and experimental interests in ferroelectric nanostructures.     

Integrated metallic gauge in a piezoelectric cantilever

In this study, a self-sensitive piezoelectric cantilever with a new design for sensing is presented. Micro-cantilevers were actuated by a 120 nm-thick Lead Zirconate Titanate Oxide (PZT) layer. Detection was done by measuring the resistance of a metallic gauge integrated on the surface of the micro-piezoelectric cantilevers. Some metallic gauges were embedded in a Wheatstone bridge to improve the measured resistance accuracy. Devices with direct resistance measurement were also realized. Gauge resistance responses were compared with an optical measurement by a White Light Interferometer. By biasing the PZT between −5 V and 5 V, cyclic deflection of the cantilever was detected with both optical and metallic gauge resistance systems. The two measurements fit. This self-sensitive piezoelectric cantilever can be used for fatigue test with packaged devices.     

P(VDF-TrFE) copolymer acoustic emission sensors

Acoustic emission (AE) sensors have been fabricated using polarized polyvinylidene fluoride/trifluoroethylene (P(VDF-TrFE)) piezoelectric copolymer films. The acoustic and electromechanical properties of the copolymers have been determined using the ultrasonic immersion technique and the resonance technique, respectively. The P(VDF-TrFE) AE sensors have been calibrated according to the ASTM standard and evaluated for potential application in the detection of AE in glass fiber reinforced polypropylene (GFPP). A ceramic AE sensor also has been fabricated using lead zirconate titanate (PZT) 7A piezoelectric ceramic and its sensitivity and performance are reported as well. The copolymer sensors do not show resonance peaks of the ceramic sensor and have adequate sensitivity. They can reproduce AE signals accurately without giving artifacts and have potential use in commercial AE systems.     

Enhancing displacement of lead-zirconate-titanate (PZT) thin-film membrane microactuators via a dual electrode design

A common design of piezoelectric microactuators adopts a membrane structure that consists of a base silicon diaphragm, a layer of bottom electrode, a layer of piezoelectric thin film, and a layer of top electrode. In particular, the piezoelectric thin film is often made of lead-zirconate-titanate (PZT) for its high piezoelectric constants. When driven electrically, the PZT thin film extends or contracts flexing the membrane and generating an out-of-plane displacement. Many manufacturing defects, however, could significantly reduce the designed actuator displacement. Examples include residual stresses, warping, non-uniform etching of the silicon diaphragm, and misalignment between the top electrode and the silicon diaphragm. The purpose of this paper is to develop a dual top-electrode design to enhance the actuator displacement. In this design, the top electrode consists of two disconnected (thus independent) electrode areas, while a continuous bottom electrode serves as the ground. The two top electrodes are located in two regions with opposite curvature when the diaphragm deflects. When the two top electrodes are driven in an out-of-phase manner, the actuator displacement is enhanced. Finite element analyses and experimental measurements both confirm the feasibility of this design. When manufacturing defects are present, experimental results indicate that the actuator displacement can be optimized by adjusting the phase difference between the dual top electrodes.     

埋入混凝土中PZT声场指向性和声能研究

将PZT作为声源埋入混凝土中构成的混凝土压电机敏模块具有超声检测功能。对埋入该模块中的PZT圆片模态分析发现,在各阶振动模态下PZT声辐射面存在分布不同的振幅极大值区域。基于混凝土压电机敏模块的声场指向性和声能实验表明:将PZT声辐射面等效为振幅相等的单一点声源的叠加,忽略振动模态对声场指向性影响,使得PZT圆片的声场指向性随频率变化规律偏离实际较大,而且在相同频率下声场指向性理论结果比实验结果发散;在各阶固有频率激励下,PZT圆片的声场指向性集中,但在一阶固有频率下声能最高,更适用于超声检测。     

Resonance properties and mass sensitivity of monolithic microcantilever sensors actuated by piezoelectric PZT thick film

The PZT thick film cantilever devices fabricated via MEMS process have much attraction because they are appropriate for biological transducer or sensor, resulting from their large actuating force and relatively high sensitivity especially in liquid. By means of resonance behavior, theoretical calculation and experimental verification of the PZT thick film cantilever devices have not been studied before. Accordingly, we focused on the sensitivity analysis and interpretation of the PZT thick film cantilevers in this study. Especially, the investigation for mass sensitivity of the PZT thick film cantilever is of importance for physical, chemical and biological sensing application. The PZT thick film cantilever devices were constructed on Pt/TiO₂/SiN _X /Si substrates using screen printing method and MEMS process. The harmonic oscillation response (resonance frequency) was measured using an optical laser interferometric vibrometer. The effect of cantilever geometry on the resonance frequency change was investigated. Compared with the theoretical resonant frequency change by mass loading, the experimental resonant frequency change of the PZT micromechanical thick film cantilever shows a variation of less than 2%. Mass sensitivities are estimated to be 30.7, 57.1 and 152.0 pg/Hz for the 400 × 380 μm, 400 × 480 μm and 400 × 580 μm cantilever, respectively.     

Preparation and Characterization of PZT films Fabricated on Si Substrate

Lead zirconium titanate (PZT) films (Zr/Ti=45:55) with a high dielectric constant are prepared successfully on the low-resistance Si substrate in sol–gel dip-coating process with PT film used as the buffer layer. The dielectric and ferroelectric properties of the films as well as the relationship between crystallization and preparing condition are studied. It is shown that the PZT ferroelectric thin films with a (110) preferred orientation and a well-crystallized perovskite structure could be obtained after annealing at 800°C for 15 min. The particle size of the sample is about 14–25 nm. The P–E hysteresis loops are measured by means of the Sawyer-Tower test system with a compensation resistor at room temperature. The remanent polarization (P _r) and coercive electric field (E _c) of the measured PZT thin films are 47.7 μC/cm² and 18 kV/cm, respectively. The relative dielectric constant ε _r and the dissipation factor tgδ of the PZT thin films were measured with an LCR meter and were found to be 158 and 0.04–0.005, respectively. Translated from “Preparation and Characterization of PZT Films Fabricated on Si Substrates” published in Chinese Journal of Semiconductors, 2004, 25(4): 404–409 (in Chinese)