Microstructure and electrical properties of 3-0 type composite of Na0.5Bi2.5Nb2O9-based bismuth-layered piezoceramics

The microstructure and electrical properties of 3-0 type composite of Na_0.5Bi_2.5Nb₂O₉-based bismuth layered piezoceramics modified by Al₂O₃ addition are investigated. The darker and plate-like grains, locating at the grain boundaries, are confirmed to be pure α-Al₂O₃ by high resolution transmission electron microscope, not a Bi₂AlNbO₇ pyrochlore phase. This 3-0 type Na_0.5Bi_2.5Nb₂O₉-Al₂O₃ composite piezoceramics have a large piezoelectric constant d₃₃ of 15.2pC/N with good temperature stability up to 600 °C, and good ferroelectric properties with a relatively large remnant polarization of ~11.6 μC/cm². These demonstrate that designing a 3-0 type composite structure would be an effective approach to tailor the microstructure and improve the electrical properties of bismuth layered piezoceremics for their potential applications at temperature up to 600 °C.     

Investigations of domain switching and lattice strains in (Na,K)NbO3-based lead-free ceramics across orthorhombic-tetragonal phase boundary

Various strain contributions of (Na_0.52K_0.48 − x)(Nb_0.92 − xSb_0.08)O₃− xLiTaO₃ ceramics in the proximity of orthorhombic (O) and tetragonal (T) polymorphic phase boundary (PPB) were quantitatively resolved by means of synchrotron x-ray diffraction together with macroscopic strain measurements. Compared with O-rich compositions with a governing mechanism of intrinsic lattice strains, T-rich compositions exhibited a dominant strain mechanism from reversible domain switching. Quantitative analysis of diffraction data suggested that extrinsic strain contributions should depend on not only the lattice distortion δ, but also the poling texture Δf, phase content (for PPB compositions) and domain types. Smaller lattice distortion and higher poling texture tended to enhance the number of irreversible domain switching in O-rich compositions, thus leading to larger fraction of intrinsic lattice strain contribution. The calculated results demonstrated that the product of two parameters Δf and δ would give a reliable estimation of domain-switching strains for T-phase compositions but an overestimation for O-phase compositions.     

Structure and electrical properties evolution of B-site complex ions (Li1/4Nb3/4) modification BNT–BT ceramics

Abstract

B-site complex ions (Li_1/4Nb_3/4)⁴⁺ modification (Bi_1/2Na_1/2)_0·94Ba_0·06TiO₃ ceramics with compositions of (Bi_1/2Na_1/2)_0·94Ba_0·06Ti_1?x(Li_1/4Nb_3/4)_xO₃ (x?=?0, 0·01, 0·03 and 0·06) have been synthesised via the conventional solid state reaction. The effect of (Li_1/4Nb_3/4)⁴⁺ content and sintering temperature on structures and electrical properties were investigated. It was found that both compositions and sintering temperatures have no significant effect on the crystal structure, and trace (Li_1/4Nb_3/4)⁴⁺ addition and sintering temperatures have a great influence on the microstructure. Two obvious dielectric anomaly peaks (T_d and T_m) were observed and dielectric constant for all poled specimens displayed significant frequency dispersion at T_d and diffusion phase transition at T_m. The piezoelectric properties of the ceramics are insensitive to the sintering temperatures, and the composition with x?=?0·03 sintering at 1150°C exhibits favourable piezoelectric properties of d₃₃?=?155 pC N^?1 and k_p?=?0·312.     

A review of an innovative concept to increase the toughness of the ceramics by piezoelectric secondary phases

Despite of wide range scope of ceramics for various applications, such as healthcare, space, and energy storage etc., poor fracture toughness restricts their multifunctional performance. The development of various techniques/approaches to improve the fracture toughness of ceramics is in continuum thrust. The present work reviews one of the novel techniques to enhance the toughness of ceramics with the incorporation of piezoelectric secondary phase in the matrix. In addition to the piezoelectricity induced toughening mechanisms such as, energy dissipation due to electro-mechanical phenomenon as well as stress-induced domain switching toughening, other toughening mechanisms such as, transformation toughening, crack bridging, crack deflection and microcrack toughening also contributes to the total observed toughening of piezo-composites. As far as the piezoelectricity induced toughening is concerned, the poling direction and electrical field parameters also affect the toughness of the ceramics.     

Phase characteristics,microstructure, and electrical properties of (1-x)BaZr0.2Ti0.8O3-(x)(Ba0.7Ca0.3)0.985La0.01TiO3 ceramics

In this study, (1-x)BaZr_0.2Ti_0.8O₃-(x)(Ba_0.7Ca_0.3)_0.985La_0.01TiO₃ ((1-x)BZT-(x)BCLT) ceramics, where x = 0.3, 0.4, 0.5, and 0.6, were prepared employing a conventional solid-state sintering technique. X-ray diffraction patterns and dielectric measurements indicated three phase regions at room temperature, including a single rhombohedral (x = 0.3), a phase coexistence of rhombohedral and tetragonal (x = 0.4), and a single tetragonal structure (x ≥ 0.5). X-ray photoemission spectra at the surface of ceramics confirmed the oxidation state of Ba²⁺, Ca²⁺, Ti⁴⁺, and Zr⁴⁺ ions. Upon BCLT addition, the reduction of the average grain size and the presence of the tetragonal structure significantly affected the dielectric, ferroelectric, and piezoelectric properties of these ceramics. With these results, the composition x = 0.3 showed maximum ε_r′ and ε_m′, whereas the composition x = 0.5 showed maximum P_r, E_c, d₃₃, k_p, and d¹₃₃ factors. These results suggest a new phase diagram for the (1-x)BZT-(x)BCLT system, which could be tuneable by BCLT concentration and might be useful as an alternative material in dielectric, ferroelectric, and piezoelectric devices.     

Remarkable piezoelectric activity and high electrical resistivity in Cu/Nb co-doped Bi4Ti3O12 high temperature piezoelectric ceramics

Cu/Nb co-doped Aurivillius type Bi₄Ti_3-x(Cu_1/3Nb_2/3)_xO₁₂ (BTCN) ceramics were investigated as a potential candidate for high temperature piezoelectric application. The microstructure, phase structure and resulting piezoelectric properties and conduction behaviors were systematically investigated. A remarkable d₃₃ of 38 pC/N was achieved in the ceramic with a composition of x = 0.015, which may be ascribed to the enhancement of remanent polarization and decrease of coercive field. Moreover, a high DC resistivity of 8.39 × 10⁶ Ω·cm at 500 °C was also obtained in the composition, due to the decrease of the oxygen vacancy concentration induced by the doped Cu/Nb. Furthermore, the ceramic also exhibited stable thermal annealing behaviors and excellent fatigue resistance. All the results demonstrated the great potential of the Cu/Nb co-doped Bi₄Ti₃O₁₂ ceramics for high temperature piezoelectric applications.     

Chemical interpretation,enhanced ferroelectric property and dielectric breakdown strength of CuO-added Sr2Nb2O7 ceramics

The structural interpretation and electrical properties of perovskite layer structured (PLS) Sr₂Nb₂O₇-xwt%CuO ceramics prepared by solid-state reaction method are investigated. The chemical interpretation of enhanced piezoelectricity is confirmed to be attributed to the rotation and/or distortion of oxygen octahedron caused by possible Cu²⁺ substitution at the A-site of Sr₂Nb₂O₇ by XRD refinement and variable-temperature Raman spectra. Sr₂Nb₂O₇-xwt%CuO (x?=?0.3, 0.5 and 0.7) ceramics shows enhanced ferroelectric properties with a larger P_r of ～4.1?μC/cm² and a smaller E_c of ～63.1?kV/cm. This study further explains the cations in A-site play a major structural role in the polarization process for PLS system. It was found that dielectric breakdown strength increases up to 258.8?kV/cm and then decreases gradually with the increase of CuO content. Impedance spectroscopy indicated that CuO addition could be helpful in increasing the grain boundary resistance then dielectric breakdown strength.     

Free vibration of laminated piezoelectric composite plates based on an accurate theory

An accurate theory for laminated piezoelectric composite plates in cylindrical bending is developed for free vibration analysis. The displacement and electric potential fields are depicted approximately by the accurate displacement and electric potential distribution functions through thickness, respectively. The two functions are formulated according to particular solutions to the three-dimensional elasticity equilibrium equations and the electrostatics charge equation. The complicated electromechanical coupling relations and the interfacial continuity conditions are enforced. Accordingly the two functions are coupled and make the displacement and potential fields coupled. The governing equations use only four displacement and potential variables, the number of which is independent of the number of layers involved. A corresponding finite element model is also developed. Natural frequencies of piezoelectric laminates subjected to different sets of boundary conditions are given and parameter studies are conducted in numerical examples. The high accuracy of this theory is demonstrated by comparing the present results with the existing exact three-dimensional solutions.     

Conduction analysis of Li2O doped 0.2[Pb(Mg1/3Nb2/3)]–0.8[PbTiO3–PbZrO3] ceramics fabricated by columbite precursor method

We have fabricated 0.2Pb(Mg_1/3Nb_2/3)O₃–0.8Pb(Zr_0.475Ti_0.525)O₃ [PMN–PZT] ceramics doped with various amounts of Li₂O (0, 0.05, 0.1, 0.2, 0.3 wt.%) using the columbite precursor method. The effects of Li-doping on the conduction behavior of PMN–PZT ceramics are discussed in relation to the low frequency dielectric dispersion and frequency domain measurement. The Li-doped PMN–PZT ceramics sintered at 950 °C showed a sufficient densification with large dielectric constant and low dielectric loss. The incorporation of Li⁺ ion in PMN–PZT ceramics led to an appreciable reduction in electrical conductivity and further enhanced the ferroelectric and piezoelectric properties. The activation energies of PMN–PZT + xLi₂O (x = 0, 0.05, 0.1, 0.2, 0.3 wt.%) ceramics calculated from ac conductivity measurement using the Arrhenius relation were 1.05, 1.25, 1.27, 1.38 and 1.41 eV, respectively. The conduction behavior is examined in the low frequency and high temperature region and the results are discussed in detail through crystal defect mechanism.