射频磁控溅射法制备Cu_2ZnSnS_4薄膜

利用射频磁控溅射法在玻璃基片上制备了Cu2ZnSnS4(CZTS)薄膜,薄膜在室温下生长,再在Ar气氛中快速退火。通过X射线衍射、X射线电子能谱、原子力显微镜和吸收谱研究了退火温度对薄膜结构、组分、形貌和禁带宽度的影响。结果表明,所制备样品为Cu2ZnSnS4多晶薄膜,具有较强的沿(112)晶面择优取向生长的特点,薄膜组分均为富S贫Cu,样品表面形貌比较均匀。退火温度为350,400,450和500℃的薄膜样品的禁带宽度分别是1.49,1.53,1.51和1.46 eV。     

Dependence of Pt(II) based phosphorescent emitter orientation on host molecule orientation in doped organic thin films

We report that the molecular orientation of a disk-shaped Pt(II) complex dopant in organic thin films is linearly proportional to the orientation of the host molecules. We ascribe this relationship to the parallel alignment of the Pt complex with the host molecules induced by a π-π interaction. This would be caused by their planar and conjugated structure, indicating that the intermolecular interaction and steric effect play an important role. This finding can be applied to obtain a horizontal emitter orientation, resulting in highly efficient OLEDs based on Pt(II) complexes.     

The conductive path in HfO2:first principles study

正The conductive path formed by the interstitial Ag or substitutional Ag in HfO_2 was investigated by using the Vienna ab initio simulation package based on the DFT theory.The calculated results indicated that the ordering of interstitial Ag ions at special positions can form a conductive path,and it cannot form at other positions. The orientation dependence of this conductive path was then investigated.Various types of super cells are also built to study the rupture of the path,which corresponds to some possible "off" states.     

利用极化方位角特征的高分辨极化SAR目标增强研究

针对高分辨极化SAR目标增强问题,提出一种利用极化方位角特征的增强方法.首先,利用圆极化法提取极化SAR图像像素点的极化方位角特征;其次,通过"方位角归零化"获得像素点在零度极化方位角下的散射矩阵值.对比归零化前、后目标及杂波区域内部像素点极化特性聚集程度的差异,阐述了利用极化方位角特征进行目标增强的原理;再次,统计获得目标及杂波区域的平均极化特性,采用非线性最优化方法实现了目标增强;最后,基于ADTS全极化SAR实测数据验证了本文方法具有优良的目标增强性能.     

二氧化铪材料中Cu的最佳迁移路径

The movement of Cu in a HfO2-based resistive random access memory （RRAM） device is investigated in depth by first-principle calculations. Thermodynamics analysis shows that the dominant motion of Cu tends to be along the [001] orientation with a faster speed. The migration barriers along different routes are compared and reveal that the [001] orientation is the optimal migration route of Cu in HfO2, which is more favorable for Cu transportation. Furthermore, the preferable HfOz growth orientation along [100], corresponding to Cu migration along [001], is also observed. Therefore, it is proposed that the HfO2 material should grow along [100] and the operating voltage should be applied along [001], which will contribute to the improvement of the response speed and the reduction of power consumption of RRAM.     

基于元数据文件的ZY-3轨道和姿态参数的精确获取

高精度卫星轨道和姿态参数的获取对卫星数据产品的推广应用具有重要意义。对“资源三号”卫星元数据文件（.AUX）的数据格式、参数意义以及量纲进行了深入的研究和分析,拟合得到任意时刻卫星的轨道和姿态参数。对拟合精度的分析表明,“资源三号”卫星轨道运行平稳,利用二次多项式拟合卫星轨道,精度可达到米级,与星上GPS设计的5米测量精度保持了很好的一致性。成像期间,其姿态变化相当稳定。该值可以作为外方位元素的初始值应用于卫星的在轨几何检校与影像的精确定位。     

ZrO2掺杂及其工艺参数的对AC-PDP介质保护膜结晶取向的影响

在电子束蒸发镀膜工艺条件下,掺杂含量、基板温度和蒸镀速率都会对薄膜的结晶取向产生影响.掺杂含量会影响复合膜层的晶面取向和X射线衍射峰的强度,其中ZrO2掺杂比为0.2时,能获得相对最强的(111)晶面衍射峰.而对于复合介质保护膜的制备工艺,则是较低的基板温度和较高的蒸镀速率条件下,更容易形成(111)的晶面取向;较高的基板温度和较低的蒸镀速率条件下,则更容易形成(200)或(220)的晶面取向.     

GIS支持下的像元地面方向反射几何参数计算

像元地面方向反射几何参数的计算在地物BRDF的遥感反演研究和多角度遥感数字图像的处理中有重要意义.对卫片像元地理位置和地面坡度、坡向以及高度的变化对像元与太阳、像元与卫星的相对几何取向和相互位置的影响进行了讨论.并完成了由任意卫片像元地面太阳入射方位角、入射角、反射方位角(卫星视方位角)、反射角(视角)所组成的方向反射几何参数的计算原理和方法研究.     

Structural, electrical and optical properties of zinc oxide produced by oxidation of zinc thin films

We have investigated the effects of oxidation temperature on the physical properties of polycrystalline zinc oxide thin films. Zinc thin films are oxidized at different temperatures in air. We have found that increasing the oxidation temperature deteriorates the preferred c-axis orientation. Also, increasing the oxidation temperature enlarges the crystal size and increases the number of needle-shaped crystals on the surface of the ZnO samples. By increasing the oxidation temperature, more than zinc melting point, tensile stresses start to build up in the films. Also by increasing temperature, sheet resistance of the films decreases, while photoluminescence intensity ratio (green to orange) increases. Increasing the oxidation temperature reduces the transparency of the films, too. It is proposed that either an increase in the number of oxygen vacancies or a decrease in the volume of grain boundaries, is responsible for the observed behavior of the films at higher oxidation temperatures.     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...