Effect of the oxide support on the propane ammoxidation with Sb–V–O-based catalysts

The role of Nb₂O₅ and γ-Al₂O₃ oxide supports on the ammoxidation of propane on supported mixed Sb–V oxide at different Sb+V surface coverages is studied. Sb and V oxide species on alumina and on niobia support show different structural features that reflect in different performance during the ammoxidation of propane to acrylonitrile. Niobia-supported catalysts are much more selective to acrylonitrile than alumina-supported ones. Alumina interacts weakly with the supported oxides while niobia forms new phases through solid state reactions with the supported oxides during catalytic operation that must account for its higher selectivity values towards acrylonitrile and higher specific rate of acrylonitrile formation per vanadium site.     

声光效应拉曼-内斯方程矩阵级数解法及声光调制器优化设计

提出一种求解正常声光相互作用拉曼 内斯 (Raman Nath)方程的矩阵级数解法 ,该解法直观方便且具有普遍性。计算结果表明 ,对Q =4 1π ,Bragg衍射的效率只有 97 5 % ;对非对称入射 ,以往的Raman Nath近似解误差较大 ;指出提高Bragg衍射效率的有效途径在于提高声光频率比并给出计算声光器件最优长度的计算公式。     

WDM传输系统中泵浦配置对光纤拉曼放大器增益特性的影响

通过理论分析和模拟运算,研究了光纤拉曼放大器泵浦优化的一般规律。     

分布式光纤喇曼放大技术及其在WDM系统中的应用

介绍了分布式光纤喇曼放大技术的原理、特点和应用 ,并从受此影响的 WDM传输系统的信噪比、噪声指数和品质因数三个方面讨论了光纤喇曼放大技术在提升光纤通信系统性能方面的重要作用。     

Structural properties of phosphorous-doped polycrystalline silicon

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E_L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm⁻¹. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials.     

Distributed Optical Fiber Sensor for Multi-point Temperature Measurement

The distributed optical fiber sensing technology is overviewed, which is based on Raman scattering light theory. Basic operation principle, structure, system characteristics and signal processing are discussed. This structure and method of the signal processing possess of certain spatial resolution, hence will ensure the practicability of system.     

Intermediate order in tetrahedrally coordinated silicon: evidence for chainlike objects

In this report, we describe the nature of intermediate order in silicon as determined by recent measurements on thin films using transmission electron microscopy (TEM) and Raman scattering. The TEM images show in addition to the expected continuous random network (CRN), the presence of highly ordered quasi-one-dimensional “chain-like objects” (CLO's) that are 1–2 nm wide and tens of nm long that meander and show some evidence of cross-linking with each other. The presence of these objects correlate to a Raman feature centered at 490 cm⁻¹ whose width is 35–40 cm⁻¹, and is used to quantify the heterogeneity in terms of the CLO and CRN (=475 cm⁻¹ scattering) concentrations. The 490 and 35 cm⁻¹ values are consistent with bond angle deviations approaching 0°, and thus reinforces an association with the CLOs. We find that in reference quality a-Si:H (made using pure SiH₄), the CLO concentration is about 5 vol%, while in state-of-the-art material using high H₂ levels of dilution during processing, it increases to about 15%. Increased stability of such material to light-soaking is thus not mediated by a direct volumetric replacement of poor with high-quality components. Rather, an important characteristic of intermediate order in silicon is the low-dimensional aspect of its order, which allows it to influence more total volume than which it is itself composed. Consistent with these and other recent findings, we propose a tensegrity model of amorphous silicon.     

中子辐照金刚石生成卡宾碳

金刚石在中子辐照下发生相转变,得到了线性结构的卡宾碳。所得产物为覆盖金刚石表面的黑色薄膜状物质,其拉曼光谱在2191cm-1处有强峰,归属于C≡C伸缩振动;同时,其俄歇电子谱的峰位与金刚石相比有5eV的位移,证实了卡宾碳的存在。在中子辐照条件下,金刚石向卡宾碳的转化可能是通过碳原子堆垛形式发生变化而实现的。     

单晶钛酸铋纳米片的XPS和Raman特性

以Bi（NO3）3·5H2O和Ti（OC4H9）4为原料，NaOH为矿化剂，采用水热法制备了形貌规则的单晶Bi4Ti3O12纳米片。X射线衍射（XRD）结果表明，所合成的产物为正交相层状钙钛矿结构的Bi4Ti3O12。场发射扫描电子显微镜（FESEM）研究显示：样品是由大量边缘尺寸接近200nm，厚度约为15nm的片状结构组成。利用X射线光电子能谱（XPS）研究产物的化学组分和价态分布。室温拉曼光谱研究表明，Bi4Ti3O12纳米片的声子寿命和热稳定性低于相应的块体材料。     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.