Formation and thermal stability of amorphous Ni-Mo-P alloys

The experimental researches on the chemical deposition of Ni-Mo-P amorphous alloys were carried out by adding Na2 MoO4 into acidic solutions. The optimum technology conditions were obtained by orthogonal design experiments. The structures and the relationship between compositions and their thermal stability were studied by energy spectrum (EC), scanning electron micrograph and X-ray diffraction spectrum. Compared with Ni-P amorphous alloys, the Ni-Mo-P amorphous alloys have high crystallization temperature and thermal stability, and the hardness reaches its peak when the annealing temperature is 500 ℃. With the increase of the heat treatment temperature, the surface morphology of the alloys changes.     

Electroless deposition of Ni on template of halloysite and its magnetic property

Halloysite template, a ceramic substrate, is of a hollow cylindric structure, on which the fine Pd nanoparticles are uniformly formed by the reduction of palldate chloride to initiate electroless deposition. The electroless deposition of Ni is catalyzed by the Pd particles, which results in a uniform layer of Ni-P alloy on halloysite. The alloy is of a nanocrystalline structure, of which the average diameter is about 6 nm. After being heat-treated at 400 ℃, it contains both Ni and Ni12P5 crystal, meanwhile, the Ni crystal gets larger with an average size of 51.9 nm.The content of phosphorous in the Ni layer has a great influence on crystal structure. The metallized halloysite has a higher inherent coercive force, and a much lower saturation magnetization in its as-plated state, while after heattreatment, the inherent coercive force decreases drastically. These magnetic properties have great relationship with the superparamagnetism of Ni nanocrystalline and the stress anisotropy in Ni layer.     

Fabrication of patterned single-walled carbon nanotube films using electrophoretic deposition

Thin films of chemically functionalized single-walled carbon nanotubes (SWNTs) were fabricated by using a direct current (dc) electrophoretic deposition method. SWNTs were shortened and then functionalized with acid chloride group to combine with the amine group-terminated gold substrate. Silica nanospheres with a diameter of about 190nm were arrayed on gold substrate to pattern a thin SWNT film. Periodically patterned SWNT film was eventually produced and would be used in potential applications like electron emitters and large surface area electrodes.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

Production of perovskite-like La1−xCaxMnO3+δ ferromagnetic thin films by electrochemical reduction

Ferromagnetic and perovskite-like thin films (<1m) of La1–xCaxMnO3+ have been routinely prepared by heat treatment of an amorphous La–Ca–Mn precursor. The precursor was electrodeposited cathodically in the absence of oxygen and water onto polished silver substrates from a nonaqueous solution of the components' nitrates. Analysis by X-ray diffraction and SQUID magnetometry shows these materials exhibit the appropriate structural and magnetic phases indicative of colossal magnetoresistance.     

Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP.     

Integrated plasma-aided nanofabrication facility: Operation, parameters, and assembly of quantum structures and functional nanomaterials

The development, operation, and applications of two configurations of an integrated plasma-aided nanofabrication facility (IPANF) comprising low-frequency inductively coupled plasma-assisted, low-pressure, multiple-target RF magnetron sputtering plasma source, are reported. The two configurations of the plasma source have different arrangements of the RF inductive coil: a conventional external flat spiral “pancake” coil and an in-house developed internal antenna comprising two orthogonal RF current sheets. The internal antenna configuration generates a “unidirectional” RF current that deeply penetrates into the plasma bulk and results in an excellent uniformity of the plasma over large areas and volumes. The IPANF has been employed for various applications, including low-temperature plasma-enhanced chemical vapor deposition of vertically aligned single-crystalline carbon nanotips, growth of ultra-high aspect ratio semiconductor nanowires, assembly of optoelectronically important Si, SiC, and Al_1-xIn_xN quantum dots, and plasma-based synthesis of bioactive hydroxyapatite for orthopedic implants.