Co2+离子对Zn电积阴极过程的影响

采用多种电化学研究方法探讨了在Zn电积过程中Co^2 对阴极极化过程的影响,并对其极化机理进行了研究．研究表明,当Co^2 离子≥6mg时,产生严重的“烧板”现象,降低了阴极Zn沉积反应的交换电流密度．对Zn沉积反应起极化作用,而且严重影响Zn的晶体形状．     

Simulation study on the influence of magnetic field in the near-anode region on anode power deposition of ATON-type Hall thruster

The highest deposition of power and temperature is always near the cusp of the ATON-type Hall thruster. This shows that when there are electrons gathering at the cusp, the distribution of heat load will be uniform, which will potentially damage the reliability. Therefore, we optimize the magnetic field near the anode. We changed the magnetic field characteristics in the near-anode region with an additional magnetic screen, and performed numerical simulation with particle-incell simulation. The simulation results show that the magnetic field of the thruster with the additional magnetic screen can alleviate the over-concentration of power deposition on the anode and reduce the power deposition in the anode by 20%, while ensuring that the overall magnetic field characteristics do not change significantly.     

Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

Recently, transparent conducting oxide thin films have attracted attention for the application to transparent conducting electrodes. In this work, we evaluated the uniformity of electrical, optical and structural properties for gallium doped zinc oxide thin films prepared on the 10 × 10 cm² silica glass substrate by pulsed laser deposition. The resistivity, carrier concentration, mobility, bonding state and atomic composition of the film were uniform along in-plane and depth direction over the 10 × 10 cm² area of the substrate. The film showed the average transmittance of 81-87%, resistivity of 1.4 × 10^− 3 Ω cm, carrier concentration of 9.7 × 10²⁰/cm³ and mobility of 5 cm²/Vs in spite of the amorphous X-ray diffraction pattern. The gradual thickness distribution was found, however, the potential for large-area and low temperature deposition of transparent conducting oxide thin film using pulsed laser deposition method was confirmed.     

Rapid growth of angle-confined large-domain graphene bicrystals

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films,the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries (GBs).The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains,which can significantly affect the performance of the graphene films and impede their industrial applications.Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation.Although the bicrystal has been widely investigated for traditional bulk materials,no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals.In this study, we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu (100) substrate.Control of the density of the GBs with a misorientation angle of 30° was realized via the controllable rapid growth of subcentimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment.The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.     

Crystallinity and electrical conductivity of sulfur-containing microcrystalline diamond thin film

Hydrogen sulfide (H₂S) was introduced into a microwave plasma chemical vapor deposition of microcrystalline diamond thin film. Secondary-ion mass spectroscopy showed that sulfur concentration was controlled from 2 × 10¹⁵ to 9 × 10¹⁷ cm^− 3 by controlling the H₂S/CH₄ ratio, while that of hydrogen concentration was around 5 × 10²⁰ cm^− 3 and was independent of the H₂S/CH₄ ratio. Electrical conductance increased linearly as the S concentration increased from 2 × 10¹⁵ to 3 × 10¹⁶ cm^− 3 without significant deterioration of film crystallinity, i.e., the amount of sp² phase did not increase. Non-ohmic conduction was converted to ohmic conduction when the S concentration reached 9 × 10¹⁷ cm^− 3 by increasing the H₂S/CH₄ ratio to 30,000 ppm. This modification was consistent to the formation of a graphitic phase by heavy S-doping, which was identified by Raman spectra and surface morphology.     

Atomic layer deposition of thin films of ZnSe—structural and optical characterization

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue ‘edge’ emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays.     

钢渗铬层上金刚石薄膜的表面、界面结构及附着性

在钢渗铬层表面用化学气相沉积(CVD))法制备了金刚石薄膜.使用扫描电镜(SEM)、透射电镜(TEM)和压痕法研究了金刚石膜的表面、界面结构及附着力.用拉曼光谱分析了金刚石膜的纯度及非金刚石碳相.甲烷含量超过0.6%(体积分数)后,金刚石膜为球形纳米晶,形核密度＞107cm-2.用甲烷含量为0.6%(体积分数)沉积的金刚石膜表面的残余压应力为1.22 Gpa,而膜背面的残余压应力更高,达2.61 Gpa.压痕显示在19.6 N载荷下膜发生开裂.TEM观察发现,膜/基界面为微观非平面,有利于提高金刚石膜的附着力.     

Growth of calcium carbonate by the atomic layer chemical vapour deposition technique

Thin films of CaCO₃ (calcite) have been grown with the atomic layer chemical vapour deposition (ALCVD) technique, using Ca(thd)₂ (Hthd=2,2,6,6-tetramethylheptan-3,5-dione), CO₂, and ozone as precursors. Pulse parameters for the ALCVD-type growth are found and self-limiting reaction conditions are established between 200 and 400 °C. Calcium carbonate films have been deposited on soda-lime glass, Si(100), -Al₂O₃(001), -Al₂O₃(012), -SiO₂(001), and MgO(100) substrates. The observed textures were: in-plane oriented films with [100](001)CaCO₃ [100](001)Al₂O₃ and [100](001)CaCO₃[110](001)Al₂O₃ on -Al₂O₃(001), amorphous films on -Al₂O₃(012) when grown at 250 °C, and columnar oriented films on soda-lime glass, Si(001), -SiO₂(001), and MgO(100) substrates with (00l) and (104) parallel to the substrate plane at 250 and 350 °C, respectively. The film topography was studied by atomic force microscopy and AC impedance characteristics were measured on as-deposited films at room temperature. The films were found to be insulating with a dielectric constant (_r) typically approximately 8. Thin films of CaO were obtained by heat treatment of the carbonate films at 670 °C in a CO₂-free atmosphere, but the thermal decomposition led to a significant increase in surface roughness.     

Polycrystalline silicon films on glass grown by amorphous-liquid-crystalline transition at temperatures below 330 °C

An approach to deposit polycrystalline silicon layers on amorphous substrates is presented. It is shown that metastable amorphous silicon can be transformed into its more stable microcrystalline structure at a temperature below 330 °C via an intermediate liquid solution stage. In particular, the interaction of liquid indium nanodroplets in contact with amorphous silicon is shown to lead to the formation of circular polycrystalline domains. Crystallinity of these domains is analyzed by micro-Raman spectroscopy. The droplet size necessary for the onset of crystallization is related to the temperature of the film. Full coverage of the substrate with microcrystalline silicon has been obtained at 320 °C within less than one hour. These films might act as seeding layers for further enlargement by steady-state liquid phase epitaxy.     

The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

Copper MOCVD (metalorganic chemical vapor deposition) using liquid injection for effective delivery of the (hfac)Cu(vtmos) [1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane) copper(I)] precursor has been performed to clarify growth behavior of copper films onto TiN, <100> Si, and Si₃N₄ substrates. Especially, we have studied the influences of process conditions and the substrate on growth rates, impurities, microstructures, and electrical characteristics of copper films. As the reactor pressure was increased, the growth rate was governed by a pick-up rate of (hfac)Cu(vtmos) in the vaporizer. The apparent activation energy for copper growth over the surface-reaction controlled regime from 155°C to 225°C was in the range 12.7–32.5 kcal/mol depending upon the substrate type. It revealed that H₂ addition at 225°C substrate temperature brought about a maximum increase of about 25% in the growth rate compared to pure Ar as the carrier gas. At moderate deposition temperatures, the degree of a <111> preferred orientation for the deposit was higher on the sequence of <Cu/Si<Cu/TiN<Cu/Si₃N₄. The relative impurity content within the deposit was in the range 1.1 to 1.8 at.%. The electrical resistivity for the Cu films on TiN illustrated three regions of the variation according to the substrate temperature, so the deposit at 165°C had the optimum resistivity value. However, the coarsened microstructures of Cu on TiN prepared above 275°C gave rise to higher electrical resistivities compared to those on Si and Si₃N₄ substrates.