Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy

The location of GaN nanowires is controlled with essentially perfect selectivity using patterned SiN_x prior to molecular beam epitaxy growth. Nanowire growth is uniform within mask openings and absent on the mask surface for over 95% of the usable area of a 76 mm diameter substrate. The diameters of the resulting nanowires are controlled by the size of the mask openings. Openings of approximately 500 nm or less produce single nanowires with symmetrically faceted tips.     

Optimization of Al_2O_3/SiN_x stacked antireflection structures for N-type surface-passivated crystalline silicon solar cells

In the case of N-type solar cells,the anti-reflection property,as one of the important factors to further improve the energy-conversion efficiency,has been optimized using a stacked Al₂O₃/SiN_x layer.The effect of SiN_x layer thickness on the surface reflection property was systematically studied in terms of both experimental and theoretical measurement.In the stacked Al₂O₃/SiN_x layers,results demonstrated that the surface reflection property can be effectively optimized by adding a SiN_x layer,leading to the improvement in the final photovoltaic characteristic of the N-type solar cells.     

Si_3N_4在BaTiO_3基低阻高性能PTCR陶瓷材料中的作用

要同时保证 PTCR材料和元件具有低室温电阻率和较高的 PTC特性 ,有较大难度。研究了添加 Si3N4作为烧结助剂 ,对 PTCR材料的显微结构和电学性能的影响。同添加 Si O2 作为烧结助剂相比 ,添加 1.0 %的 Si3N4的 PTCR材料更易同时满足低阻高性能要求。     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。     

Optical response of tin nitride thin films prepared by halide chemical vapor deposition under atmospheric pressure

Optical response of tin nitride (SnN_x) films, which were deposited onto quartz substrates by means of atmospheric pressure, halide chemical vapor deposition (AP-HCVD), were examined by pulsed irradiation of a YAG laser (532 nm). It was observed that the transmittance of a light of a He-Ne laser (633 nm) through the SnN_x film decreases after the film is irradiated with a YAG laser. The atomic force microscopy (AFM) micrograph observation confirmed that spot-like humps appeared on the SnN_x film surface in the regions spotted by the YAG laser. This phenomenon was explained in terms of the laser-assisted thermal decomposition of SnN_x to β-tin.     

Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy

A method of forming cubic phase (zinc blende) GaN (referred as c‐GaN) on a CMOS‐compatible on‐axis Si (100) substrate is reported. Conventional GaN materials are hexagonal phase (wurtzite) (referred as h‐GaN) and possess very high polarization fields (～MV/cm) along the common growth direction of <0001>. Such large polarization fields lead to undesired shifts (e.g., wavelength and current) in the performance of photonic and vertical transport electronic devices. The cubic phase of GaN materials is polarization‐free along the common growth direction of <001>, however, this phase is thermodynamically unstable, requiring low‐temperature deposition conditions and unconventional substrates (e.g., GaAs). Here, novel nano‐groove patterning and maskless selective area epitaxy processes are employed to integrate thermodynamically stable, stress‐free, and low‐defectivity c‐GaN on CMOS‐compatible on‐axis Si. These results suggest that epitaxial growth conditions and nano‐groove pattern parameters are critical to obtain such high quality c‐GaN. InGaN/GaN multi‐quantum‐well structures grown on c‐GaN/Si (100) show strong room temperature luminescence in the visible spectrum, promising visible emitter applications for this technology.     

用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

利用二次离子质谱和扩展电阻探针技术测量了硅中注入硼的深度分布 .在适当的测量深度 ,用扩展电阻探针技术测得的结果对二次离子质谱技术测量的结果进行了标定 ,从而得到硅片中硼原子的深度分布 .用近似模型估算了扩展电阻探针针尖半径对测试分辨率的影响 .若探针针尖半径为r0 ,测量斜面的角度为 ξ ,在用扩展电阻探针技术测量载流子浓度的深度分布时 ,可以近似认为深度分辨率为 7 86r0 sinξ.还定性讨论了样品表面耗尽层对扩展电阻探针技术的影响.     

碳氮纳米管薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术,在玻璃衬底上600℃～650℃的低温下制备出了碳氮纳米管薄膜,氮含量为12％,采用扫描电子显微镜(SEM)、X射线光电子谱(XPS)和Raman光谱等测试手段对所制备薄膜的表面形貌、微结构和成分进行了分析,并研究了其场致电子发射特性,阈值电场为3．7V／μm。当电场为8V／μm时,电流密度为413．3μA／cm^2,实验表明该薄膜具有优异的场发射性能,而且用这种方法制备的薄膜将大大简化平板显示器件的制作工艺。     

Near-Field Drives Long-Lived Shallow Trapping of Polymeric C3N4 for Efficient Photocatalytic Hydrogen Evolution

Undesired photoelectronic dormancy through active species decay is adverse to photoactivity enhancement. An insufficient extrinsic driving force leads to ultrafast deep charge trapping and photoactive species depopulation in carbon nitride (g-C₃N₄). Excitation of shallow trapping in g-C₃N₄ with long-lived excited states opens up the possibility of pursuing high-efficiency photocatalysis. Herein, a near-field-assisted model is constructed consisting of an In₂O₃-cube/g-C₃N₄ heterojunction associated with ultrafast photodynamic coupling. This In₂O₃-cube-induced near-field assistance system provides catalytic “hot areas”, efficiently enhances the lifetimes of excited states and shallow trapping in g-C₃N₄ and this favors an increased active species density. Optical simulations combined with time-resolved transient absorption spectroscopy shows there is a built-in charge transfer and the active species lifetimes are longer in the In₂O₃-cube/g-C₃N₄ hybrid. Besides these properties, the estimated overpotential and interfacial kinetics of the In₂O₃-cube/g-C₃N₄ hybrid co-promotes the liquid phase reaction and also helps in boosting the photocatalytic performance. The photocatalytic results exhibit a tremendous improvement (34-fold) for visible-light-driven hydrogen production. Near-field-assisted long-lived active species and the influences of trap states is a novel finding for enhancing (g-C₃N₄)-based photocatalytic performance.     

使用溅射AlN成核层实现大规模生产深紫外LED

高质量AlN薄膜对制造高性能深紫外器件非常重要,但是目前还很难使用大型工业MOCVD生长出高质量的AlN薄膜.采用磁控溅射制备了不同厚度的用作成核层的AlN薄膜,使用大型工业MOCVD直接在成核层上高温生长AlN外延层,研究了不同成核层对AlN外延层质量的影响.通过扫描电子显微镜和原子力显微镜对成核层AlN薄膜的表面形貌进行表征;使用高分辨X射线衍射仪对AlN外延层晶体质量进行表征,结果表明:在溅射成核层上生长的AlN外延层的晶体质量有显著提高.使用大型工业MOCVD在蓝宝石衬底上成功制备出中心波长为282 nm的可商用深紫外LED,在注入电流为20 mA时,单颗深紫外LED芯片的光输出功率达到了1.65 mW,对应的外量子效率为1.87%,饱和光输出功率达到4.31 mW.