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本文研究金属目标的后向散射特性与入射角、表面温度场之间的关系。根据现有条件设计了实验装置,并用该装置测量了部分实验数据。相关结论对激光探测等领域的研究具有一定的参考价值。 相似文献
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本文利用瑞利散射原理分析了脉冲信号和脉宽大于、小于回波时间的方波信号的回波信号波形,并利用数值模拟得到了其理论波形图。根据原理自主搭建了一套光纤光时域反射仪(Optic Time Domain Reflectometer,简称OTDR),用通信中通用的1550nm激光波长对样品光纤进行了实际测量,得到了与理论模拟完全一致的实测波形。通过对实测波形进行降噪处理得到了高精度的长度测量值和损耗测量值。长度测量的相对误差仅为0.0085%,与直接测量值比较,光纤传输损耗的相对误差为0.086%,理论与实验表明该OTDR系统完全可以与工程用的OTDR系统相媲美,在工程技术和教学研究中具有一定的应用前景。 相似文献
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X.M. Wang K.B. Ma D.N. Wijesundera B. Liu J.R. Liu W.K. Chu 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2009,267(20):3466-3470
Rutherford Backscattering Channeling (RBSC) is often used in the studies of single crystalline materials with regard to issues hinging upon the location of specific atomic species within the crystal lattice. Results are deduced from the characteristics of an angular scan curve representing the yield of close collision events from the constant scattering of the probing projectiles from the crystalline sample in a sequence of directions lying in a plane perpendicular to one particular crystal lattice direction. Such angular scans exhibit dips near major channels, and their angular widths are of concern. On a fundamental level, accurate determination of these angular widths in the case of axial channeling and their interpretation come up against uncertainties arising out of the absence of a preferred choice for the plane of scan. Here, we shall illustrate these uncertainties in a representative case, channeling of 2 MeV He+ ions in the 1 0 0 direction of Si. 相似文献
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G. Kalliabakos S. Kossionides P. Misailides C. T. Papadopoulos R. Vlastou 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2000,170(3-4):467-473
A method for Cu and S profiling in patina layers was developed by applying a combination of nuclear reaction analysis (NRA) and Rutherford backscattering spectroscopy (RBS). The copper profiling was performed by using the 1327 keV γ-ray deexciting the third excited state to the ground state of 63Cu produced by the reaction 63Cu(p,p′γ)63Cu. For the determination of sulphur the 2230 keV γ-ray was used deexciting the first excited state to the ground state of 32S formed through the reaction 32S(p,p′γ)32S, which exhibits three sharp resonances at projectile energies 3.094, 3.195 and 3.379 MeV. The relevant cross-sections were measured in the energy range between 3.0 and 3.7 MeV in steps of 20 keV at 125° to the incident proton beam direction. The technique was tested using artificially produced and natural copper patina layers. Supporting information on the depth distribution of the constituent elements of the patina samples was obtained by p-RBS (Ep: 1.5 MeV, θ: 160°). 相似文献
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We present a method for characterizing the full five parameter heterophase interface character distributions (HICD) using two-dimensional electron back-scatter diffraction (EBSD) images. We apply the HICD method to determine the orientation relationships and three-dimensional normal vectors of Cu-Nb interfaces in both physical vapor-deposited (PVD) pure Cu-Nb (4 μm individual layer thickness) and accumulative roll-bonded (ARB) alloyed Cu-Nb multilayer composites (200-600 nm layer thickness). The HICD analysis shows that {1 1 2}Cu planes are most preferentially and frequently bonded with {1 1 2}Nb planes with Kurdjumov-Sachs and Nishiyama-Wasserman misorientations in the ARB alloyed Cu-Nb multilayers. These interfaces differ from the {1 1 1}Cu||{1 1 0}Nb interfaces predominantly found in the PVD pure Cu-Nb multilayered thin films. Also, pure tilt type interfaces with a [1 1 1]/30° misorientation and {1 1 0}Cu planes bonded to {1 1 2}Nb planes were found in ARB alloyed Cu-Nb multilayers. In the ARB material the observed Cu-Nb interfaces differ from what would be obtained from random pairings of the Cu and Nb orientations in terms of the relative intensities (in multiples of random distribution) and shapes of the interface normal peaks, which indicates that these interfaces were preferentially selected during the high strain ARB process. The measured ARB textures along the interface also differ from the theoretical rolling textures for each bulk single phase metal, suggesting that during ARB layer refinement these interfaces have some influence on slip activity by constraining grain deformation or through the kinetics of dislocation-interface interactions. 相似文献
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