Advanced techniques for characterization of ion beam modified materials

Understanding the mechanisms of damage formation in materials irradiated with energetic ions is essential for the field of ion-beam materials modification and engineering. Utilizing incident ions, electrons, photons, and positrons, various analysis techniques, including Rutherford backscattering spectrometry (RBS), electron RBS, Raman spectroscopy, high-resolution X-ray diffraction, small-angle X-ray scattering, and positron annihilation spectroscopy, are routinely used or gaining increasing attention in characterizing ion beam modified materials. The distinctive information, recent developments, and some perspectives in these techniques are reviewed. Applications of these techniques are discussed to demonstrate their unique ability for studying ion-solid interactions and the corresponding radiation effects in modified depths ranging from a few nm to a few tens of μm, and to provide information on electronic and atomic structure of the materials, defect configuration and concentration, as well as phase stability, amorphization and recrystallization processes. Such knowledge contributes to our fundamental understanding over a wide range of extreme conditions essential for enhancing material performance and also for design and synthesis of new materials to address a broad variety of future energy applications.     

Correlation between resistivity and oxygen vacancy of hydrogen-doped indium tin oxide thin films

Thin films of indium tin oxide (ITO) sputter-deposited by dc-plasma containing deuterium on glass substrate without any heat treatments exhibited gradual lowering in electrical resistivity with increasing the deuterium content [D₂] in plasma gas by 1% and then demonstrated a jump in resistivity by further increase of [D₂] than 1%. X-ray photoelectron spectroscopy revealed that hydroxyl-bonded oxygen in ITO grew continuingly with [D₂]. Deuterium positioned at the interstitial site increased almost quantitatively with increasing [D₂]. Rutherford backscattering spectroscopy showed gradual reduction in the oxygen content of ITO with increasing [D₂] by 1% and then demonstrated an abrupt increase of the oxygen content with the increase of [D₂] than 1%. The films with [D₂] < 1% were oxygen deficient, but those with [D₂] > 1% were excess of oxygen. The most oxygen deficient film of [D₂] = 1% was the most conductive. Behavior in the resistivity with [D₂] looks parallel to that in the oxygen content. A lower resistivity of the films corresponded well to oxygen vacancy rather than hydrogen interstitial.     

雷达遥感在环境保护工作中的应用

雷达遥感具有穿透力和全天候作业的优势,在环境保护领域中应用需求广泛。面对国家日益严峻的环保形势和最新发射的环境雷达卫星,急需系统介绍雷达遥感技术在环保领域中的应用。文章通过全面分析合成孔径雷达（SAR）在溢油、水华、土壤湿度、植被长势、生物量以及应急监测等环境保护中的应用,为已经发射的环境一号雷达卫星提供明确的应用目标,并为构建全天候、全天时的环境天地一体化监测体系提供重要的技术参考。     

金属目标表面温度场对后向散射偏振结构的影响

文章采用基尔霍夫法和微扰法,探讨了表面为大粗糙度表面和微粗糙表面两种情况 下,入射角、金属目标表面温度场对后向散射偏振结构的影响。根据现有条件设计了实验装置,并用该装置测量了部分实验数据,相关结论对激光探测等领域的研究具有一定的参考价值。     

PdZn catalysts prepared by washcoating microstructured reactors

Methanol steam reforming is an option for dynamic hydrogen generation in automotive fuel cell systems. Microstructured reactors with small channels (100 μm×100 μm) are being studied. A washcoating procedure applying dispersed ZnO nanoparticles to the microchannel walls was adapted to the PdZn catalyst system. The catalyst layer showed no significant differences during X-ray diffraction and temperature-programmed oxidation and reduction experiments for examination of oxidation state and alloy formation compared with other PdZn systems reported in the literature. Chemisorption with different adsorbates and X-ray backscattering were used for gathering detailed information on PdZn dispersion, diameter and shape with respect to the preparation parameters. Catalytic experiments yielded a relationship between the catalyst properties and the catalytic activity, degradation and secondary reactions.     

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r_sat and source injection velocity υ_inj were observed, accounting for the large drive current I_Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r_sat is related to a shorter critical length ℓ₀ for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ_inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.     

机载激光测深海水后向散射包络的频域分析

根据机载激光测深海水后向散射雷达方程,在机载激光测深系统典型参数情况下,详细分析了海水衰减系数、海水反照率、飞机高度以及光学接收系统全视场角对海水后向散射频谱的影响。得到了: 当衰减系数C 从0. 2/ m 变到0. 9/ m 时, 后向散射包络频谱将展宽236MHz ;当海水反照率ω从0. 1 变到0. 9 时,后向散射包络频谱将展宽220MHz ;机载激光测深系统接收视场角和飞机高度对系统探测到的海水后向散射包络频率无显著影响;当最小可探测功率Pb = 1. 56 ×10 - 10W 时,在典型的实验参数条件下后向散射包络的频率范围为0 < f< 5. 6 ×108Hz。     

Refractory metal boride ohmic contacts to P-type 6H-SiC

Ohmic contacts have been fabricated on p-type 6H-SiC (1.3×10¹⁹ cm⁻³) using CrB₂, W₂B, and TiB₂. The boride layers (∼100–200 nm) were sputter-deposited in a system with a base pressure of 3×10⁻⁷ Torr. Specific contact resistances were measured using the linear transmission line method, and the physical properties of the contacts were examined using Rutherford backscattering spectrometry. All as-deposited contacts exhibited rectifying characteristics. Ohmic behavior was observed following short anneals (2–10 min) at 1100°C and 5×10⁻⁷ Torr. Current-voltage characteristics were linear for CrB₂ and W₂B and quasi-linear for TiB₂. The lowest values of the specific contact resistance (r_c in Ω-cm²) measured at room temperature for CrB₂ and W₂B were 8.2×10⁻⁵ and 5.8×10⁻⁵, respectively. The specific contact resistance for TiB₂ was not determined accurately. Longer anneals (30 min for W₂B and 90 min for CrB₂) reduced the room temperature values of r_c to 6.1×10⁻⁵ for W₂B and 1.9×10⁻⁵ for CrB₂. Backscattering spectra revealed substantial concentrations of oxygen in all as-deposited boride films. The short anneal cycle removed the oxygen in the CrB₂ films and reduced the concentration substantially in the W₂B films; however, annealing had no affect on the oxygen concentration in the TiB₂ films. The CrB₂/SiC interface remained stable during annealing; i.e., Si and carbon were not observed in the boride layers after annealing. In contrast, W₂B and TiB₂ reacted with the SiC epilayers, and after annealing, Si and carbon were observed at the surface of each boride layer.