蓝绿激光水下成像系统的探测灵敏度分析

为了分析水下激光成像探测系统的探测能力,根据水下蓝绿激光主动成像系统的成像过程,分析了目标与背景的辐射特性、海水后向散射特性、距离选通特性以及激光发射器和接收器的性能,提出了一种基于光束扩展函数(BSF)的探测灵敏度模型。该模型在海水散射系数与衰减系数之比介于0~1的范围内都适用。通过对给定参数的系统进行分析计算,进一步讨论了激光发散角、系统接收口径和图像传感器选通门宽等因素对系统探测能力的影响。结果表明:当选通门宽等于激光脉冲宽度时,系统的探测深度达到最大。模型的建立将为系统设计和系统参量的优化选择提供理论依据。     

MPL探测气溶胶误差的数值模拟计算研究

微脉冲激光雷达(micropu lse lidar,MPL)是一种新型的激光雷达系统。通过对其探测的大气气溶胶后向散射比和后向散射系数进行误差的数值模拟计算,分析了误差源及其不确定性,给出了误差数值模拟计算的方法。较为详细地分析和讨论了各误差源对大气气溶胶后向散射比和后向散射系数的影响,为进一步提高微脉冲激光雷达的测量精度提供了可靠的理论依据。     

检测散射元间距的多分辨率分析方法

本文研究了从生物组织的背向散射信号中提取散射元间距信息的多分辨率分析方法。从文中构造一维生物组织超声散射模型可以看到,散射元间距信息隐含在背向散射信号的低频包络中。本文采用绝对值检波方法作多分辨率分析的预处理,并采用能量最大准则确定检测的敏感尺度。仿真试验结果表明,这种方法可以有效地提取出背向散射信号中低频包络信息,准确地检测出散射元的位置;具有较强的抗噪性。     

金属目标表面温度场对后向散射偏振结构的影响

文章采用基尔霍夫法和微扰法,探讨了表面为大粗糙度表面和微粗糙表面两种情况 下,入射角、金属目标表面温度场对后向散射偏振结构的影响。根据现有条件设计了实验装置,并用该装置测量了部分实验数据,相关结论对激光探测等领域的研究具有一定的参考价值。     

PdZn catalysts prepared by washcoating microstructured reactors

Methanol steam reforming is an option for dynamic hydrogen generation in automotive fuel cell systems. Microstructured reactors with small channels (100 μm×100 μm) are being studied. A washcoating procedure applying dispersed ZnO nanoparticles to the microchannel walls was adapted to the PdZn catalyst system. The catalyst layer showed no significant differences during X-ray diffraction and temperature-programmed oxidation and reduction experiments for examination of oxidation state and alloy formation compared with other PdZn systems reported in the literature. Chemisorption with different adsorbates and X-ray backscattering were used for gathering detailed information on PdZn dispersion, diameter and shape with respect to the preparation parameters. Catalytic experiments yielded a relationship between the catalyst properties and the catalytic activity, degradation and secondary reactions.     

Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r_sat and source injection velocity υ_inj were observed, accounting for the large drive current I_Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r_sat is related to a shorter critical length ℓ₀ for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ_inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.     

机载激光测深海水后向散射包络的频域分析

根据机载激光测深海水后向散射雷达方程,在机载激光测深系统典型参数情况下,详细分析了海水衰减系数、海水反照率、飞机高度以及光学接收系统全视场角对海水后向散射频谱的影响。得到了: 当衰减系数C 从0. 2/ m 变到0. 9/ m 时, 后向散射包络频谱将展宽236MHz ;当海水反照率ω从0. 1 变到0. 9 时,后向散射包络频谱将展宽220MHz ;机载激光测深系统接收视场角和飞机高度对系统探测到的海水后向散射包络频率无显著影响;当最小可探测功率Pb = 1. 56 ×10 - 10W 时,在典型的实验参数条件下后向散射包络的频率范围为0 < f< 5. 6 ×108Hz。     

Refractory metal boride ohmic contacts to P-type 6H-SiC

Ohmic contacts have been fabricated on p-type 6H-SiC (1.3×10¹⁹ cm⁻³) using CrB₂, W₂B, and TiB₂. The boride layers (∼100–200 nm) were sputter-deposited in a system with a base pressure of 3×10⁻⁷ Torr. Specific contact resistances were measured using the linear transmission line method, and the physical properties of the contacts were examined using Rutherford backscattering spectrometry. All as-deposited contacts exhibited rectifying characteristics. Ohmic behavior was observed following short anneals (2–10 min) at 1100°C and 5×10⁻⁷ Torr. Current-voltage characteristics were linear for CrB₂ and W₂B and quasi-linear for TiB₂. The lowest values of the specific contact resistance (r_c in Ω-cm²) measured at room temperature for CrB₂ and W₂B were 8.2×10⁻⁵ and 5.8×10⁻⁵, respectively. The specific contact resistance for TiB₂ was not determined accurately. Longer anneals (30 min for W₂B and 90 min for CrB₂) reduced the room temperature values of r_c to 6.1×10⁻⁵ for W₂B and 1.9×10⁻⁵ for CrB₂. Backscattering spectra revealed substantial concentrations of oxygen in all as-deposited boride films. The short anneal cycle removed the oxygen in the CrB₂ films and reduced the concentration substantially in the W₂B films; however, annealing had no affect on the oxygen concentration in the TiB₂ films. The CrB₂/SiC interface remained stable during annealing; i.e., Si and carbon were not observed in the boride layers after annealing. In contrast, W₂B and TiB₂ reacted with the SiC epilayers, and after annealing, Si and carbon were observed at the surface of each boride layer.