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51.
N. M. Ravindra Krshna Ravindra Sundaresh Mahendra Bhushan Sopori Anthony T. Fiory 《Journal of Electronic Materials》2003,32(10):1052-1058
A brief review of the models that have been proposed in the literature to simulate the emissivity of silicon-related materials
and structures is presented. The models discussed in this paper include ray tracing, numerical, phenomenological, and semi-quantitative
approaches. A semi-empirical model, known as Multi-Rad, based on the matrix method of multilayers is used to evaluate the
reflectance, transmittance, and emittance for Si, SiO2/Si, Si3N4/SiO2/Si/SiO2/Si3N4 (Hotliner), and separation by implantation of oxygen (SIMOX) wafers. The influence of doping concentration and dopant type
as well as the effect of the angle of incidence on the radiative properties of silicon is examined. The results of these simulations
lead to the following conclusions: (1) at least within the limitations of the Multi-Rad model, near the absorption edge, the
radiative properties of Si are not affected significantly by the angle of incidence unless the angle is very steep; (2) at
low temperatures, the emissivity of silicon shows complex structure as a function of wavelength; (3) for SiO2/Si, changes in emissivity are dominated by substrate effects; (4) Hotliner has peak transmittance at 1.25 μm, and its emissivity
is almost temperature independent; and (5) SIMOX exhibits significant changes in emissivity in the wavelength range of 1–20
μm. 相似文献
52.
SiCOI技术是SiC材料与SOI技术结合而形成的一种新的微电子技术,它的产生与发展不仅推动SIC半导体技术的发展,还将弥补SI SOI技术应用的局限性,并将在高温、高频、大功率、抗辐射等电子学领域得到应用的发展。文章介绍了近年来SiCOI技术的最新进展和简要评述。 相似文献
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以注入氧隔离(SIMOX)技术制备的SOI(silicon—on-insulator)为衬底,利用气相外延生长技术获得了质量良好的厚膜SOI材料,进而通过反应离子刻蚀方法在厚膜SOI材料上成功研制了SIMOX大截面单模脊型光波导。对于波长为1.55μm的光,其传输损耗小于0.6dB/cm。 相似文献
55.
硅离子注入对全耗尽SIMOX材料总剂量效应的影响 总被引:1,自引:1,他引:0
Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen (SIMOX) materials by silicon ion implantation and annealing. The ID-VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with ^60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials. 相似文献
56.
用于恶劣环境的耐高温压力传感器 总被引:1,自引:0,他引:1
为了解决如高温200℃等恶劣环境下的压力测量问题,基于微机电系统(MEMS)和高能氧离子注入(SIMOX)技术,研制了一种量程为0~120 kPa的压阻式压力传感器。该传感器芯片由硅基底、薄层二氧化硅、惠斯登电桥结构的硼离子注入层、氮化硅应力匹配层、钛-铂-金梁式引线层和由湿法刻蚀形成的空腔组成。在氧剂量1.4×1018/cm2和注入能量200 keV条件下,由高能氧离子注入技术形成厚度为367 nm的埋层二氧化硅层,从而将上部测量电路层和硅基底隔离开,解决了漏电流问题,使得传感器芯片可以在高温200 ℃以上的环境下使用。为了提高传感器在宽温度范围内的稳定性,对温度补偿工艺进行了研究,补偿后的传感器灵敏度温度系数和零位温度系数很容易控制在1×10-4/℃·FS。实验标定结果表明:在200 ℃下,研发的耐高温压力传感器具有很好的工作性能,其线性度误差达0.12%FS、重复性误差为0.1%FS、迟滞误差为0.12%FS,精度达0.197%FS,满足油井、风洞、汽车和石化工业等现代工业的应用需求。 相似文献
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58.
Modification of SiO2 precipitate formation by defect engineering of SIMOX (separation by implanted oxygen) process was studied using cross section scanning spreading resistance microscopy (SSRM). Firstly, open volume defects, nanocavities, have been introduced by He+ ion implantation in the region, where SiO2 precipitates were subsequently formed. Secondly, dual (simultaneous) oxygen (O+) and silicon (Si+) implantation was used to modify SiO2 reaction kinetics too. The results show that the He-induced nanocavities enhance the SiO2 formation presumably releasing excess strain associated with Si oxidation, while the use of a dual O+/Si+ beam do not influence significantly the oxidation kinetics in the initial state of the SIMOX process in our samples. Overall, SSRM was shown to be a suitable method for observation of the early stage of buried oxide formation in Si, since it measures the local resistivity, the main functional parameter of a SIMOX structure. 相似文献
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