Investigation of C49–C54 TiSi2 transformation kinetics

The C49C54 TiSi₂ polymorphic transformation has been investigated trying to elucidate the relative role played by nucleation and growth in silicide formation. Samples having an amorphous layer and C54 seeds have been made by heat treatment of a Ti/Si bi-layer structure and subsequent suitable Ar ion implantation. In situ resistance measurements performed during heat treatments in controlled and purified atmosphere at constant heating rates and ex situ X-ray diffraction, MeV ⁴He⁺ backscattering spectrometry and cross-section transmission electron microscopy have been used to characterize the samples. The results show that in a sample with C49 the C54 nucleation occurs at 800°C; when C54 seeds are present the growth is appreciable already at temperatures as low as 400–500°C. It has also been shown that nucleation and growth of the C49 phase is a process competitive to the growth of the C54 phase.     

Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm² at 83 K.     

Effect of lateral dimensional scaling on the thermal stability of poly-CoSi2 reacted on Si (001)

The effect of lateral dimensional scaling on the thermal stability of polycrystalline cobalt disilicide wires reacted on Si (001) has been studied down to 0.6 μm linewidth. An unpatterned silicide has been used as a reference sample. The annealing processes were performed in N₂ environment, between 900 and 1050°C, on both blanket and patterned silicide. Transmission electron microscopy analyses in plan-view and cross-section allowed us to study the morphology of lines before and after high-temperature processes. Resistance measurements showed a better thermal stability in blanket silicide layer compared to narrow lines. The electrical behaviour of the lines has been explained in terms of both lateral roughness and hole formation in the silicide layer.     

Photoelectrochemical study of nickel base alloys oxide films formed at high temperature and high pressure water

The oxide film formed on nickel base alloys at high temperature and high pressure water exhibits semi-conducting properties evidenced by photocurrent generation when exposed to monochromatic light. The use of macro- and micro-photoelectrochemical techniques (PEC and MPEC) aims to identify the different semiconductor phases and their distribution in the oxide film.Three different nickel base alloys were corroded in recirculation loop at 325 °C in pressurised water reactor primary coolant conditions for different exposition durations.PEC experiments on these materials enable to obtain macroscopic energy spectra showing three contributions. The first one, with a band gap around 2.2 eV, was attributed to the presence of nickel hydroxide and/or nickel ferrite. The second one, with a band gap around 3.5 eV, was attributed to Cr₂O₃. The last contribution, with a band gap in the range of 4.1-4.5 eV, was attributed to the spinel phase Ni_1−xFe_xCr₂O₄. In addition, macroscopic potential spectra recorded at different energies highlight n-type semi-conduction behaviours for both oxides, Cr₂O₃ and Ni_1−xFe_xCr₂O₄.Moreover, MPEC images recorded at different energies exhibit contrasted regions in photocurrent, describing the distribution of nickel hydroxide and/or nickel ferrite and Cr₂O₃ in the oxide film at a micron scale.It is concluded that PEC techniques represent a sensitive and powerful way to locally analyse the various semiconductor phases in the oxide scale.     

Chemical conversion during transient liquid-phase hot pressing of TaSi2–TaC–SiC SHS-powder

This article presents a study on the manufacturing of three-phase TaSi₂–TaC–SiC ceramics through self-propagating high-temperature synthesis (SHS) and their subsequent chemical conversion to TaC–SiC carbide composites during transient liquid-phase hot pressing (HP). The effect of carbon black doping, ranging from 0% to 7%, on the degree of chemical conversion, structure, mechanical, and thermophysical properties of the ceramics was investigated. Our results showed that the proportionate increase of carbide content and decrease of TaSi₂ content in hot-pressed samples was achieved through carbon black doping. The increase of TaSi₂ content during hot pressing led to an increase in porosity from 4.3% to 23.8%, while the density decreased from 6.3 to 4.6 g/cm³. Superior mechanical properties were obtained when SHS-powder was doped with 1.5% carbon black (HV = 15.2 GPa, K_IC = 4.8 MPa × m^1/2, and σ_bend = 331 MPa). The structure of the ceramics was characterized by a TaSi₂–SiC matrix and highly dispersed TaC grains predominantly residing inside TaSi₂, with the TaC–TaSi₂ and TaSi₂–SiC interface being incoherent, as demonstrated through TEM studies. Complete conversion of TaSi₂ to TaC and SiC was achieved through 7% carbon black doping, resulting in the hot-pressed sample consisting solely of carbide grains. Two-stage hot pressing was employed to enhance the relative density of the two-phase TaC–SiC sample, resulting in ceramics characterized by HV up to 22.3 GPa, K_IC up to 6.1 MPa × m^1/2, σ_bend up to 256 MPa, and λ up to 36 W/(m × K).     

钼合金双层结构MoSi2涂层的制备与组织性能

采用料浆烧结法在TZM钼合金表面制备Mo层,再通过包埋渗法制得双层结构的MoSi₂厚涂层。利用内热法在大气环境下测试了钼合金Si-Mo涂层在1 600 ℃下的高温抗氧化性能。结果表明,涂层由多孔MoSi₂外层和致密MoSi₂内层组成,Mo粉细化对涂层组织致密化和高温抗氧化性能提升有益,平均粒度9.8 μm和2.2 μm的Mo粉制备的涂层在1 600 ℃下的高温抗氧化寿命分别为5.1 h和14.8 h,高温氧化后涂层结构转变为SiO₂氧化层-多孔MoSi₂层-致密层-Mo₅Si₃层。随着氧化持续进行,SiO₂层和Mo₅Si₃层不断增厚,而MoSi₂层持续减薄并转化为Mo₅Si₃,硅元素的持续贫化导致涂层最终失效。     

Investigation of MOSFET operation in bipolar mode

The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si–SiO₂ interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits.