光学薄膜激光损伤阈值测试方法的介绍和讨论

目前国内外对光学薄膜激光损伤阈值的测试方法基本上可归纳为3类:国际标准ISO 11254、国军标G JB1487-1992和各单位的企业标准。在简要介绍这些方法的基础上,对各类测试方法的有关内容进行了讨论,并提出尽快与国际标准接轨以及研制并生产这种测试仪器的重要性和迫切性。     

LD泵浦的全固态激光器的单频实现方法

由于“绿光问题”的存在,使得全固态腔内倍频激光器的应用备受限制。本文详细分析了用单纵模法实现全固态腔内倍频激光器单频输出的各种方法和实验装置。     

分布反馈光纤激光器模式特性分析

根据耦合波理论,在分析分布反馈(DFB)光纤激光器纵模特性的基础上,着重阐述其偏振特性。另外给出了偏振态同耦合系数和双偏振态相移量差的关系。理论分析结果表明,当分布反馈光纤激光器输出为0阶模时,输出激光的偏振状态由耦合系数和双偏振态的相移量差共同决定,即在耦合系数一定的情况下,通过增加双偏振态相移量的差,或在双偏振态相移量差一定的情况下,通过减小耦合系数,可以实现单偏振输出。实验中在经载氢处理的掺铒光纤上制作分布反馈光纤激光器,由于耦合系数较大和双折射效应过小,输出为双偏振态。     

DBR几何特性对其反射率和DBR激光器线宽的影响

对DBR几何参量不同的InGaAs-GaAs-AlGaAs DBR半导体激光器样品的输出线宽进行了测量和分析.样品激光器DBR光栅取不同的长度和蚀刻深度以考察其几何特性对耦合系数、反射率以及输出线宽的影响.线宽通过自差频测量系统测量得到.对实验结果与理论计算结果进行了对比.对测得的光学特性参数与几何特性参数之间的联系进行了分析.在此基础上讨论了DBR几何特性对激光器输出线宽的影响.研究结果为该类型DBR半导体激光器的制造提供了有用的信息.     

全固态单模Nd：YAG激光器输出特性优化的实验研究

报道了一种使用1mm直径Nd：YAG激光棒和单一二极管激光模块侧面抽运的简单激光腔设计。通过使用小口径激光棒抑制高阶横模振荡、曲面后反镜和负透镜组合补偿热透镜效应和实验优化后反镜的曲率半径、负透镜的焦距以及激光腔腔长等结构参数使激光器输出功率和光束圆率同时达到最大，实现了平均功率10.8W、脉冲宽度15ns、光束圆率98.80.8%、M2值1.1的近衍射极限光束输出。     

高斯镜平凸非稳腔本征模场的有限元数值计算

为了研究激光在高斯镜平凸非稳腔中的模式和相位特征,在SIEGMAN分析多元件非稳腔的理论基础上,采用有限元数值方法计算耦合输出镜镜面反射率为高斯分布的圆镜平凸非稳腔本征模场分布。将光场在腔内一次往返的ABCD系数代入惠更斯-基尔霍夫衍射积分方程,可以写出光场往返一次的衍射积分方程。将镜面分割成若干个等宽圆环,把衍射积分方程转化成矩阵相乘形式,经过数值计算,得到理想空腔和非共轴空腔优先起振的光场本征模式分布结果与相位特性。计算结果表明,当合适选择输出镜半径与高斯反射率分布,可以得到光斑半径为0.3cm的基模高斯光束输出,此计算结果与实验结果相符。同时也讨论了耦合输出镜对光束质量的影响。     

DESIGN AND IMPLEMETTATION OF CMOS IMAGE SENSOR

A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35 μm process along with its design and implementation is introduced in this paper. The pixel architecture of Active Pixel Sensor (APS) is used in the chip, which comprises a 256×256 pixel array together with column amplifiers, scan array circuits, series interface, control logic and Analog-Digital Converter (ADC). With the use of smart layout design, fill factor of pixel cell is 43%. Moreover, a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used.The CMOS image sensor chip is implemented based on the 0.35 μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.     

高能半导体泵浦气体激光器

在重新梳理高能激光底层物理问题的基础上,指出半导体泵浦气体激光器将是未来高能激光器的重要发展方向,讨论了半导体泵浦气体激光器的基本原理和核心要求,并以半导体泵浦碱金属蒸气激光器为例进行了详细剖析,对半导体泵浦气体激光器的前景进行了展望。     

Photocatalytic degradation of reactive black 5 azo dye by zinc sulfide quantum dots prepared by a sonochemical method

Zinc sulfide (ZnS) nanoparticles (NPs) with an average particle size of 2 nm were successfully synthesized under ultrasonic irradiation without any surfactant and high temperature treatment. Prepared NPs were characterized by powder X-ray diffraction, transmission electron microscopy, high resolution transmission electron microscopy, Fourier transform infrared spectroscopy, dynamic light scattering analysis, and UV–vis absorption spectroscopy. The energy band gap of ZnS NPs was measured by UV–vis absorption spectroscopy. The photocatalytic activity of semiconducting sulfide quantum dots for degradation of an azo dye called reactive black 5 (RB5) was investigated. Results showed that the dye can be photocatalytically degraded with high rate by ZnS NPs under UV light irradiation. The kinetics of removal of RB5 in aqueous solutions was studied in a series of experiments which were varied in the amount of ZnS NPs, contact time, pH, dye concentration, and temperature. The experimental data were fitted very well in the pseudo-second order kinetic model. 95% of dye was successfully removed in 10 min using 0.2 g ZnS NPs in a neutral pH. A possible molecular mechanism for photocatalytic degradation of dye by ZnS NPs was also given.     

Structural modification of semiconductor optical amplifiers for wavelength division multiplexing systems

In this paper, the semiconductor optical amplifier is analyzed for in-line and pre-amplifier for wavelength division multiplexing (WDM) transmission having minimum crosstalk and power penalty with sufficient gain. It is evaluated that the cross gain saturation of the SOA can be reduced by settling crosstalk at lower level and also minimizing the power penalty by slight increase in the confinement factor. At an optimal confinement factor of 0.41069, high amplification is obtained up to saturation power of 20.804 mW. For this confinement factor, low crosstalk of −9.63 dB and amplified spontaneous emission noise power of 119.4 μW are obtained for −15 dBm input signal. It has been demonstrated for the first time that twenty channels at 10 Gb/s WDM can transmit up to 5600 km by use of this optimization. In this, cascading of in-line SOA is done at the span of 70 km for return zero differential phase shift keying modulation format with the channel spacing of 100 GHz. The optical power spectrum and clear eye are observed at the transmission distance of 4340 and 5600 km in RZ-DPSK system. The bit error rate for all channels increases more than 10⁻¹⁰ with the increase in launched input power.