Si晶片激光标识码制作技术的研究

Si片标识码在工艺加工管理中起重要作用.传统手写方式存在字体不美观、划痕深及硅渣污染等缺点.鉴于此,采用波长1060 nm光纤激光器进行激光标识码制作.研究中分别改变激光平均输出功率、脉冲频率及扫描速度,借助目视、金相显微镜及动态三维光学轮廓仪来观察标识码清晰程度、污染程度及深浅程度的变化,了解它们与上述参数间相互对应关系.重点解决清晰度与打标深度之间的矛盾,从而得到清晰、清洁且深度满足后续半导体纳米级加工工艺要求的激光标码技术.研究表明:低脉冲频率(20 kHz)下,随平均功率上升,标识码的清晰度逐渐增加,镜检结果显示硅渣的数量及其分布区域增大;高脉冲频率(90 kHz)下,平均功率增加对标识码清晰度的影响不明显,镜检结果没有发现硅渣.扫描频率与清晰度及污染程度成正比关系.扫描速度与打标深度呈反比关系.采用40％平均功率,25 kHz频率,1500 mm/s扫描速度及双线填充字体(TrueType)的工艺条件,所得标识码在目视及镜检下清晰美观,无硅渣污染.轮廓仪测量结果显示字迹深度及边缘凸起均在200 nm以下.经批量产品验证,根据研究成果所开发的工艺技术稳定且对后续工艺无不良影响.目前已取代手写方式.     

Si/C对高铬铸铁初生奥氏体稳定性及碳化物的影响

通过改变高铬铸铁(Cr15)的硅含量,研究Si/C对高铬铸铁初生奥氏体及碳化物的影响。结果表明:随着Si/C增加,初生奥氏体中固溶的Si原子含量增加,C、Cr原子含量减少,奥氏体稳定性降低;初生碳化物呈生长初期易粗大而后生长受限的趋势演变;硬度值递增是由于Si原子固溶强化、碳化物含量增加及大量奥氏体转变成马氏体综合作用的结果;C、Cr原子微区富集增加,共晶碳化物形核核心及凝固温度区间先收窄再扩大的共同作用导致共晶碳化物尺寸先减小再增大。     

Materials study of silicon-on-lnsulator material by TEM

Silicon-on-insulator (SOI) technology addresses the need for many different device applications, such as radiation tolerant devices, high voltage, and three-dimensional circuitry applications. Isolated silicon epitaxy (ISE) is a commercialised process which results in excellent SOI material quality with proven results, having overcome most of the obstacles of other processes, although only having reduced, not eliminated, threading dislocations. The remaining isolated dislocations have been examined in detail by transmission electron microscopy (TEM). These have been diagnosed as normal lattice dislocations, with no faults or twins in the material. The nature, source, and behavior of the remaining dislocations is discussed.     

Bistability of theDX center in GaAs and AlxGa1-xAs,and experimental tests for negativeU of theDX level

We summarize a large body of experimental and theoretical work, especially in Si-doped GaAs and Al _x Ga_1-x As, regarding the bistability of theDX center. There is good evidence that theDX center is just the simple donor, and that each donor can exist in either of two distinct lattice configurations, each with its own spectrum of bound electronic states. Generally, the substitutional configuration binds electrons in shallow hydrogenic states, but many observations also indicate a deep (highly localized) state ofA ₁ symmetry. These states are to be distinguished from bound states of a lattice-distorted configuration, the lowest-lying of which is the deepDX level. The occupation of theDX level in thermal equilibrium with the states of the conduction band can be reasonably well modeled by assuming thatDX is either a one-electron or a two-electron state, and we discuss the reasons for this ambiguity. However, we then show that such thermal equilibrium results are consistent with thermal capture and emission kineticsonly if we assume thatDX is a two-electron state. Our results thus support the model of Chadi and Chang in which the distorted configuration is stabilized by capture of two electrons. In other words, the defect exhibits negative effective correlation energy (negativeU).     

Large-scale,adhesive-free and omnidirectional 3D nanocone anti-reflection films for high performance photovoltaics

An effective and low-cost front-side anti-reflection(AR) technique has long been sought to enhance the performance of highly efficient photovoltaic devices due to its capability of maximizing the light absorption in photovoltaic devices. In order to achieve high throughput fabrication of nanostructured flexible and anti-reflection films, large-scale, nano-engineered wafer molds were fabricated in this work. Additionally, to gain in-depth understanding of the optical and electrical performance enhancement with AR films on polycrystalline Si solar cells, both theoretical and experimental studies were performed. Intriguingly,the nanocone structures demonstrated an efficient light trapping effect which reduced the surface reflection of a solar cell by17.7% and therefore enhanced the overall electric output power of photovoltaic devices by 6% at normal light incidence. Notably, the output power improvement is even more significant at a larger light incident angle which is practically meaningful for daily operation of solar panels. The application of the developed AR films is not only limited to crystalline Si solar cells explored here, but also compatible with any types of photovoltaic technology for performance enhancement.     

Optical properties in 1D photonic crystal structure using Si/C60 multilayers

The feasibility of using Si/C60 mulfilayer films as one-dimensional(1D)photonie band gap crystals was investigated by theoretical calculations using a transfer matrix method(TMM).The response has been studied both within and out of the periodic plane of Si/C60 multilayers.It is found that Si/C60 multilayer films show incomplete photonic band gap(PBG)behavior in the visible frequency range.The fabricated Si/C60 multilayers with two pairs of 70 am C60 and 30 nm Si layers exhibit a PBG at central wavelength of about 600 nm.and the highest reflectivity call reach 99%.As a consequence,this photonic crystal may be important for fabricating a photonic crystal with an incomplete band gap in the visible frequency range.     

带浅沟槽隔离的双光电二极管电路模型研究

通过器件模拟并结合实验结果,在已有PIN(Positive intrinsic negative)和DPD(Double photo-diodes)探测器电路模型基础之上,对带浅沟槽隔离(STI)准PIN结构的DPD探测器电路模型进行了探讨。模拟了由深N阱和浅沟槽给DPD带来的性能上的改变,同时结合实验结果,从响应电流和探测器的等效串联电阻两方面对电路模型进行了修正,得到了符合该器件的较准确电路模型。     

硅片纳米微粒清洗洁净新技术

随着半导体技术的不断发展,集成电路的线宽正在不断减小,对硅片表面质量处理的要求也就越来越高.传统的湿法清洗已经不能满足要求,故必须研发新的微粒清洗方法.简述了硅片表面污染物杂质的类型、传统的微粒湿法清洗法和干法清洗法,然后在此基础上分析了几种硅片制备工艺中纳米微粒的去除新技术,包括低温冷凝喷雾清洗工艺,N2O电子回旋加速共振等离子系统清洗技术,以及超细晶圆质量无危险的清洗方法等.     

DCXRD分析Ge/Si(001)多层纳米岛材料

结合透射电镜与原子力显微镜实验,用双晶X射线衍射方法分析了Ge/Si多层纳米岛材料.衍射的卫星峰可以被分解为两个洛仑兹峰,它们分别源于材料的浸润层区和纳米岛区.利用透射电镜得到Si和SiGe层的厚度比,估算出浸润层区与岛区的Ge组分分别为0.51和0.67.这是一种简单估算Ge/Si多层纳米岛材料中Ge组分的方法.     

大气状态下AFM阳极氧化加工Si的研究

Si纳米氧化线是构筑基于Si的纳米器件的基础。通过AFM针尖诱导阳极氧化加工的n型Si(100)的实验得到凸出的n型Si(100)氧化物高度和偏置电压成线性关系,与针尖扫描速度成负对数关系,并在前人的基础上深化了AFM针尖诱导氧化加工的机理和理论模型,得到了合适的加工条件为偏压8 V和扫描速度1μm/s。