保温条件下过共晶Al-Si合金半固态浆料的组织演变

研究了保温时间和保温温度对电磁搅拌ZL117合金半固态浆料稳定性的影响.试验结果表明：半固态浆料中初生Si的颗粒直径随着保温时间的延长而逐渐增大,但在前15 min内增长速度比较缓慢,15 min后增长较快;随着保温温度的升高而缓慢增大;初生Si的形状系数随着保温时间的延长而变得越来越大,但也在前15 min内变化较为缓慢,15 min后变大速度突然加快;初生Si的形状系数在620 ℃下保温时最小,在610～620 ℃之间随着保温温度的升高而缓慢变小;在620～650 ℃之间随着保温温度的升高而逐渐增加.     

Influence of electroplating conditions on magnetic properties of Fe-36wt.% Ni alloy film

A Fe-Ni soft magnetic film was prepared in sulphate solution by electroplating. The influences of the molar ratio of n [Fe2+ ]/ n [Ni2+ ], current density, bath temperature, pH and L-ascorbic acid concentration on magnetic properties of Fe-Ni alloy film were investigated. The results show that the saturated flux density(BS) of the film increases initially and decreases after it reaches the specific value with the increase of n [Fe2+ ]/ n [Ni2+ ] molar ratio, current density, bath temperature and pH. However, the relationship between L-ascorbic acid concentration and B S keeps linear. It is observed that the coercive force( Hc) is enhanced with the increase of n [Fe2+ ]/ n [Ni2+ ] molar ratio, current density and pH. By comparison, when the bath temperature increases, Hc always decreases. With the increase of L-ascorbic acid concentration, the coercive force increases initially and then decreases.     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

Wear-resistance and anti-scuffing of multi-arc ion plating molybdenum films

The multi-arc ion plating technology was employed to prepare the molybdenum films with thickness of 3 μm on the AISI 1045 steel. The wear and scuffing tests were carried out on the ball-on-disc tester. AFM and SEM equipped with EDS were adopted to observe and analyze the morphologies and element compositions of surface,cross-section and worn scar of the Mo film. The phase structure was studied by XRD and the bonding strength between Mo film and substrate was measured by scratching tester. The tribological experiments show that the Mo film possesses a good wear-resistance and an excellent anti-scuffing property. The failure mechanism of Mo film under extreme condition is flaking off.     

Intermetallic phase formation in directionally solidified Al−Si−Fe alloy

The present study has been undertaken to better understand the solidification behavior of Al−Si−Fe alloys containing 7wt.% Si and 0.9wt.% Fe, with particular regard to the formation of phase during controlled solidification and influence of growth rates on intermetallic phase selection. The alloys studied were Al-7Si-0.9Fe alloys, which were produced by a modified Bridgman solidification arrangement. These alloys were solidified unidirectionally with different growth rates (1–30mm/min). The solidified microstructure of these alloys consists of the growth of primary aluminum and multiple second phase reactions.     

Nano-composite ZrO2/Au film electrode for voltammetric detection of parathion

This work describes the fabrication of ZrO₂/Au nano-composite films and its application for voltammetric detection of organophosphate pesticides. The nano-composite ZrO₂/Au film was prepared through a combination of sol–gel procedure and electroless plating that can be carried out in a general chemistry lab with no need for special facilities and reagents. The sensing performance of the ZrO₂/Au nano-composite film electrode toward parathion was studied with square wave voltammetry. The nano-ZrO₂ showed a strong affinity toward the phosphate group on parathion molecules, which provides sensitivity and selectivity of the sensing film. A linear relationship was obtained between the peak currents and the concentration of parathion, with a detection limit for standard samples of 3 ng/ml. In addition, interference studies showed that structurally similar compounds without phosphate groups would not interfere with the response toward parathion of the film electrode.     

Fabrication of patterned single-walled carbon nanotube films using electrophoretic deposition

Thin films of chemically functionalized single-walled carbon nanotubes (SWNTs) were fabricated by using a direct current (dc) electrophoretic deposition method. SWNTs were shortened and then functionalized with acid chloride group to combine with the amine group-terminated gold substrate. Silica nanospheres with a diameter of about 190nm were arrayed on gold substrate to pattern a thin SWNT film. Periodically patterned SWNT film was eventually produced and would be used in potential applications like electron emitters and large surface area electrodes.     

高熵合金氮化物薄膜的研究进展

基于多元高熵合金思想制备的高熵合金氮化物薄膜由于多种元素相互混合,易于产生高熵效应、晶格畸变效应和缓慢扩散效应,使得该新型薄膜体系形成简单的非晶结构和纳米晶结构。依赖于成分和制备工艺,多元高熵合金氮化物薄膜表现出简单的固溶体结构和优异的性能,因而在许多领域极具应用潜力。综述了高熵合金氮化物薄膜的发展概况、组织特点、性能特征、制备方法和应用前景,并对高熵合金氮化物薄膜的发展方向进行了展望。     

Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles

Abstract— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfO^x gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics.