Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films

The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm² was obtained for the sample annealed at 950℃. In this work, we confirmed that the formation mechanism of ohmic contacts on AlN was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au₂Ti and AlAu₂ alloys. This result provided a possibility for the preparation of AlN-based high-frequency, high-power devices and deep ultraviolet devices.     

铸态SiCp/Al基复合材料中的台阶界面

采用铸造方法制备了SiCp／Al—10Si-0.5Mg、SiCp／Al—5Si-0．5Mg复合材料，以常规透射电镜为主要分析手段，对复合材料中六方SiC颗粒上的台阶界面进行了研究。台阶界面产生于SiC颗粒上的局部区域。台阶上两个相交的小平面，其中之一是六方SiC晶体中的(0001)最密排面，台阶界面上增强体与基体结合良好。提出了台阶界面形成的两种机制。     

硫酸/盐酸比例和Al~(3+)含量对铝箔隧道孔生长的影响

研究了硫酸/盐酸比例、温度和Al3+含量对高纯铝箔隧道孔生长的影响,发现随着硫酸浓度增加,温度对隧道孔极限长度和孔径的影响减小,在本文条件下隧道孔生长的临界温度最低可降低到35℃。在电解液中一定含量的Al3+可以避免铝箔表面形成大孔,从而改善隧道孔分布均匀性。     

Al2O3陶瓷激光铣削试验研究

采用Nd∶YAG脉冲激光器对Al2 O3陶瓷进行铣削加工试验。系统研究了工艺参数对铣削量和铣削面质量的影响规律 ,并利用优化的铣削工艺对Al2 O3陶瓷进行多种形状的铣削加工。     

Effect of the polymer matrices on the dielectric behavior of a percolative high-k polymer composite for embedded capacitor applications

High dielectric constant (high-k) polymer composites are of great interest for embedded capacitor applications. Previously, we demonstrated that epoxy—aluminum composites are promising for embedded capacitor applications, because they have a high dielectric constant and a low dielectric loss due to the core—shell structure of the self-passivated aluminum particles. In this work, to further understand the dielectric behavior of aluminum composites, lower-loss polymers such as silicone, polyimide, polynorbornene, and benzocyclobutene were explored as matrices for the aluminum composites. It is found that the polymer matrices can significantly change the dielectric properties of the aluminum composites. A polymer matrix with a lower dielectric constant generally results in a lower dielectric constant of its aluminum composites. In this regard, polymer—aluminum composites have a similar dielectric characteristic as polymer—ceramic composites. Thermomechanical properties of aluminum composites were characterized by a thermomechanical analyzer.     

热循环对SiCp/Al复合材料性能影响的研究

SiCp/Al复合材料具有可调的热膨胀系数(CTE)、高热导率、低密度和良好的尺寸稳定性等优异性能,广泛应用于航空航天、军用电子等封装领域,由于SiCp/Al复合材料制成的组件工作环境较为苛刻,温度变化对其影响值得探讨。文章研究了热循环对SiCp/Al复合材料的CTE、热导率和弯曲强度的影响,并对其热膨胀行为作了分析。实验结果表明,热循环能有效降低SiCp/Al中的热残余应力,其热性能比铸态明显改善,弯曲强度有所降低;在低温阶段,经退火处理和退火处理+热循环处理后SiCp/Al的CTE基本重合,在高温阶段,经退火处理+热循环处理后的SiCp/Al具有更低的CTE。     

微量RE和Al对Sn-9Zn焊料组织与性能的影响

采用正交试验研究了微量RE和Al对Sn-9Zn无铅焊料电导率、硬度、润湿性及微观组织的影响,并与传统锡铅焊料进行了对比。Sn-9Zn焊料的电性能及力学性能优于传统锡铅焊料,但润湿性较差。添加微量RE和Al可以显著提高Sn-9Zn合金铺展率、细化组织,且不降低焊料电导率和力学性能,最佳w(RE)和w(Al)分别为0.05%和0.10%,铺展率达到61.98%,与Sn-9Zn相比提高了13.40%,硬度为20.90HB,电导率为8.15×106S/m。     

Al‐Doped Black Phosphorus p–n Homojunction Diode for High Performance Photovoltaic

2D layered materials based p–n junctions are fundamental building block for enabling new functional device applications with high efficiency. However, due to the lack of controllable doping technique, state‐of‐the‐art 2D p–n junctions are predominantly made of van der Waals heterostructures or electrostatic gated junctions. Here, the authors report the demonstration of a spatially controlled aluminum doping technique that enables a p–n homojunction diode to be realized within a single 2D black phosphorus nanosheet for high performance photovoltaic application. The diode achieves a near‐unity ideality factor of 1.001 along with an on/off ratio of ≈5.6 × 10³ at a low bias of 2 V, allowing for low‐power dynamic current rectification without signal decay or overshoot. When operated under a photovoltaic regime, the diode's dark current can be significantly suppressed. The presence of a built‐in electric field additionally gives rise to temporal short‐circuit current and open‐circuit voltage under zero external bias, indicative of its enriched functionalities for self‐powered photovoltaic and high signal‐to‐noise photodetection applications.     

Flexible Piezoelectric Touch Sensor by Alignment of Lead‐Free Alkaline Niobate Microcubes in PDMS

A highly sensitive, lead‐free, and flexible piezoelectric touch sensor is reported based on composite films of alkaline niobate K_0.485Na_0.485Li_0.03NbO₃ (KNLN) powders aligned in a polydimethylsiloxane (PDMS) matrix. KNLN powder is fabricated by solid‐state sintering and consists of microcubes. The particles are dispersed in uncured PDMS and oriented by application of an oscillating dielectrophoretic alignment field. The dielectric constant of the composite film is almost independent of the microstructure, while upon alignment the piezoelectric charge coefficient increases more than tenfold up to 17 pC N^?1. A quantitative analysis shows that the origin is a reduction of the interparticle distance to under 1.0 µm in the aligned bicontinuous KNLN chains. The temperature stable piezoelectric voltage coefficient exhibits a maximum value of 220 mV m N^?1, at a volume fraction of only 10%. This state‐of‐the‐art value outperforms bulk piezoelectric ceramics and composites with randomly dispersed particles, and is comparable to the values reported for the piezoelectric polymers polyvinylidenefluoride and its random copolymer with trifluoroethylene. Optimized composite films are incorporated in flexible piezoelectric touch sensors. The high sensitivity is analyzed and discussed. As the fabrication technology is straightforward and easy to implement, applications are foreseen in flexible electronics such as wireless sensor networks and biodiagnostics.     

AlGaN/GaN异质结构的欧姆接触

通过改变Ti/Al的结构及退火条件,研究了AlGaN/GaN异质结构上Ti/Al/Ni/Au金属体系所形成的欧姆接触.结果表明,Ti/Al/Ni/Au金属厚度分别为20,120,55和45nm,退火条件为高纯N2气氛中850℃、30s时在AlGaN/GaN异质结构上获得了良好的欧姆接触,其比接触电阻率为3.30×10-6Ω·cm2.SEM分析表明该条件下的欧姆接触具有良好的表面形貌,可以很好地满足高性能AlGaN/GaN高电子迁移率晶体管制造的要求.