Formation of a protective layer against corrosion on Mg alloy via alkali pretreatment followed by vanillic acid treatment

Although Mg alloy possesses high specific strength, low density, and good biocompatibility, poor corrosion resistance hinders its further applications. In the present study, an innovative protective layer against corrosion was prepared on the AZ31 Mg alloy via alkali pretreatment followed by vanillic acid treatment. The alkali pretreatment supplied –OH for the AZ31 Mg alloy surface to react with vanillic acid. The vanillic acid treatment played a crucial role in enhancing the corrosion resistance due to the excellent ability to act as a barrier and retard aqueous solution penetration, which effectively isolated the underlying Mg alloy from the corrosive environment. The corrosion current density of alkali and vanillic acid-treated Mg alloy (AZ31V) almost showed two orders of magnitude lower values in comparison with that of the AZ31 Mg alloy, and the corrosion potential of AZ31V Mg alloy increased from −1.41 to −1.25 V. The immersion tests proved that there was no occurrence of severe corrosion. Hence, the alkali pretreatment and vanillic acid treatment may represent a promising method to improve the corrosion resistance of Mg alloy.     

Isolation of the effect of the hairy layer length on the mechanical properties of waterborne coatings

The effect of the acidic hairy layer length on the interdiffusion of polymer between particles and as a consequence on the mechanical properties of the films produced from waterborne coatings has been studied. In order to isolate this effect, latexes with the same particle diameter and molecular weight but stabilized with poly(acrylic acid)-block-poly(butyl acrylate) (PAA-b-PBA) block copolymers of controlled and different lengths were prepared. Tensile strength measurements showed at the macroscopic level that the presence of AA chains in the particle surface reduced the mechanical properties of the films dried at room temperature, being its effect worse the longer the AA chain length. Higher annealing temperatures erased the negative effect of the acidic hairy layer on mechanical properties. The neutralization with NaOH instead of with NH₄OH also led to worse mechanical properties. These macroscopic results were supported by Fluorescence Resonance Energy Transfer (FRET) experiments that showed that at the microscopic level, the extent of interdiffusion occurred slower when the AA chains in the particles surface increased, the annealing temperature was lower and when NaOH was used as neutralizing agent instead of NH₄OH.     

测井资料在优选压裂层位中的应用

压裂是低孔、低渗油层改造的主要增产措施。根据常规测井资料、岩石物理实验分析数据及试油成果。研究储层四性关系，确定区块的低孔、低渗储层评价标准。进一步对油层进行分类，有针对性地为油层压裂提供施工层位和准确的储层参数。通过商543区块实例，阐述了选择压裂层位的方法。     

探针馈电圆柱共形微带天线阻抗特性的FDTD法分析

将圆柱坐标系下非分裂式理想匹配层吸收边界条件(UPML)引入到圆柱共形微带天线的全波分析中，并给出了其中的场量迭代方程，明显地减小了计算空间，简化了编程；提出了圆柱坐标系下考虑有限尺寸探针半径的新算法，使得计算结果更加精确；应用GPOF方法预估了时域晚时响应，使计算时间减少了70％～90％。本文给出的模型能够对任意多层圆柱共形结构的微带天线进行计算，因此对此类天线的CAD设计具有实际意义。     

CDMA 1x EV-DO覆盖模型的分析与仿真

结合经过校正后的适合于本地无线环境的OKUMURA-HATA传播模型，建立起一种新的本地化基于1x EV—DO系统数据业务吞吐量分析的覆盖预测仿真模型，可应用于1xEV—DO系统的网络规划及系统性能分析。     

湘中海相浅层湘冷1井酸压工艺研究及应用

湘冷1井具有气层埋藏浅（400m-500m）、纵向上裂隙发育的特点，属低孔、低渗的含泥质灰岩致密储层。大量室内实验和研究采用“前置液酸压＋闭合酸化”工艺技术，并优选了相应降阻酸和闭合酸配方。通过酸压实现了该井工业油气流的突破，取得了明显的增产效果，为新区海相浅层气的开发探索出了一套成熟的改造增产措施。     

低渗低温低压水敏性储气层压裂改造技术研究与应用

低渗低温低压水敏性储气层因压裂液快速破胶困难、黏土膨胀水敏伤害严重和压后压裂液返排动力不足等因素，使得压裂增产面临诸多难题。针对上述难题进行了技术攻关，形成了弱交联、低温活化剂与超量破胶剂的低温储层快速破胶技术、有机盐与无机盐双元体系复合防膨技术以及高比例液氮全程助排的排液技术。该压裂增产改造技术使牛101井头屯河组首次获得工业油气流，扩展了三塘湖盆地勘探空间。     

试油井选层压裂新工艺及现场试验

设计新型可洗井封隔器，保障油井有反洗井通道，有效防止封隔器以上砂埋所引发的管柱砂卡事故，并对新型封隔器、控制开关、密封接头、同心大通径压力计托筒等井下工具组合优化。解决了多层油井任意选层压裂、求产、测井温一体化的难题。     

大体积抗渗混凝土工程施工技术

简述了浇筑混凝土的施工准备工作，从滑动层的增设、配合比的配制、混凝土的浇筑及养护、后浇带的处理等方面介绍了大体积抗渗混凝土工程的施工质量控制措施，以保证混凝土的各项指标达到规范及设计要求。     

Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.