Sputtering mechanisms near the threshold energy

Threshold energies for sputtering cannot be calculated directly but have to be evaluated from the energy dependence of the sputtering yields. This paper investigates trajectories of projectile and recoils near the threshold energy for sputtering, where the collision cascade becomes increasingly simple. Statistics of the different collision events show which processes dominate the sputtering close to the threshold energy for selfbombardment of different light and heavy targets. The differential cross-sections for scattering and recoil production explain qualitatively the probability for the various processes.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Cu-Mg/Al_2O_3催化乙醇和乙二胺合成N-乙基乙二胺

在固定床反应器内,乙醇和乙二胺经分子间催化胺化反应合成了N-乙基乙二胺(NEED),考察了一系列铜系催化剂的活性,并筛选出催化性能较好的Cu-Mg/A l2O3催化剂;通过X射线衍射和透射扫描电子显微镜方法表征了助剂Mg对Cu/A l2O3催化剂的改性作用;考察了助催化剂Mg含量、反应温度、反应压力、进料量和乙二胺含量等对Cu-Mg/A l2O3催化剂性能的影响。实验结果表明,Cu-Mg/A l2O3催化剂具有很好的活性和选择性;在200℃、3.0MPa、质量分数20%的乙二胺乙醇溶液、进料量1.0mL/m in的条件下,乙二胺的转化率为71.56%,产物NEED的选择性和收率分别为92.62%和69.86%;经过20 d的连续使用表明,Cu-Mg/A l2O3催化剂具有良好的稳定性。     

Synchronous Full-Scan for Asynchronous Handshake Circuits

Handshake circuits form a special class of asynchronous circuits that has enabled the industrial exploitation of the asynchronous potential such as low power, low electromagnetic emission, and increased cryptographic security. In this paper we present a test solution for handshake circuits that brings synchronous test-quality to asynchronous circuits. We add a synchronous mode of operation to handshake circuits that allows full controllability and observability during test. This technique is demonstrated on some industrial examples and gives over 99% stuck-at fault coverage, using test-pattern generators developed for synchronous circuits. The paper describes how such a full-scan mode can be achieved, including an approach to minimize the number of dummy latches in case latches are used in the data path of the handshake circuit.     

抗乙肝病毒表面抗原PreS1(20-47)的单链抗体在转基因烟草根分泌物中的初步表达

为探索利用植物根分泌表达重组蛋白的可行性，构建了含有抗乙肝病毒表面抗原PreS1(20—47)单链抗体(ScFv)基因的表达载体。该ScFv基因转化烟草后在烟草根部细胞的细胞质和内质网中获得表达。实验结果表明，5’端融合ER导向信号肽的重组ScFv可通过根分泌表达。     

蓬莱19-3 FPSO和渤中25-1 FPSO设计的一些特点研究

通过多年在蓬莱19-3油田FPSO和渤中25-1油田FPSO设备维护和管理的经历,从船体、上部模块、单点系泊等方面,对这两艘FPSO上的一些系统和设备在设计方面各自的特点进行对比和分析     

BaxSr（1—x）TiO3多层膜椭偏光谱研究

用溶胶－凝胶技术在Bi(100）衬底上制备了单层和渐变型多层的BaxSr(1-X)TiO3薄膜，其膜层组分分别为：Ba0.7Sr0.3TiO3,Ba0.8Sr0.2TiO,Ba0.9Sr0.1TiO3,BaTiO3，对生长制备出的多层BaxSr(1-X)TiO3薄膜进行了变角度椭偏光谱测量，通过椭偏光谱解谱分析研究，首次得到了BaxSr(1-X)TiO3多层膜结构不同膜层的膜厚和光学常数，其结果显示：椭偏光谱分析得到的不同膜层的膜厚与卢瑟福背向散射测量得到的结果基本相符；渐变型多层膜中BaTiO3薄膜的折射率比单层BaTiO3薄膜折射率大许多，与体BaTiO3的折射率相接近，这说明渐变型多层膜中BaTiO3薄膜的光学性质与体材料的光学性质接近。     

任意取向多个介质旋转椭球的散射场

本文提出了一种用于计算任意取向多个介质椭球电磁散射的混合方法.利用扩展边界条件(EBC)导出具有旋转轴对称单个椭球以球面波矢量函数为基底的T矩阵,结合球矢量波函数旋转定理和递推T矩阵方法,给出多个任意取向介质椭球的散射场.数值例子验证了该混合方法的计算精度和有效性.     

校园网宿舍网络管理模式的探讨

讨论了高校学生宿舍区网络的特点，结合天津商学院校园网的实践，讨论了校园网宿舍网络管理的模式。     

Atomic layer chemical vapour deposition of copper

Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We have deposited strongly (1 1 1)-textured thin films of copper by atomic layer deposition (ALD) using [2,2,6,6-tetramethyl-3,5-heptadionato] Cu(II), Cu(thd)₂, as the precursor. The dependence of the microstructure of the films on ALD conditions, such as the number of ALD cycles and the deposition temperature was studied by X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy. Analysis of (1 1 1)-textured films shows the presence of twin planes in the copper grains throughout the films. SEM shows a labyrinthine structure of highly connected, large grains developing as film thickness increases. This leads to low resistivity and suggests high resistance to electromigration.