Transmission electron microscopy study of Ni–Si nanocomposite films

Nickel induced crystallization of amorphous Si (a-Si) films is investigated using transmission electron microscopy. Metal-induced crystallization was achieved on layered films deposited onto thermally oxidized Si(3 1 1) substrates by electron beam evaporation of a-Si (400 nm) over Ni (50 nm). The multi-layer stack was subjected to post-deposition annealing at 200 and 600 °C for 1 h after the deposition. Microstructural studies reveal the formation of nanosized grains separated by dendritic channels of 5 nm width and 400 nm length. Electron diffraction on selected points within these nanostructured regions shows the presence of face centered cubic NiSi₂ and diamond cubic structured Si. Z-contrast scanning transmission electron microscopy images reveal that the crystallization of Si occurs at the interface between the grains of NiSi₂ and a-Si. X-ray absorption fine structure spectroscopy analysis has been carried out to understand the nature of Ni in the Ni–Si nanocomposite film. The results of the present study indicate that the metal induced crystallization is due to the diffusion of Ni into the a-Si matrix, which then reacts to form nickel silicide at temperatures of the order of 600 °C leading to crystallization of a-Si at the silicide–silicon interface.     

透射电镜图像分析法测定丁苯胶乳的平均粒径及其粒径分布

丁苯胶乳(SBL)经稀释、超声分散、四氧化锇(OsO_4)染色后,利用透射电镜(TEM)获取其图像,采用图像分析仪阴影矫正、编辑图像、颗粒分割等功能对获取的图像进行处理,通过粒子个数百分比的直方图表示其粒径分布,建立了丁苯胶乳平均粒径及其粒径分布的测定方法。结果表明:该方法的相对标准偏差为2.8%,相对误差为7%,因而其准确性及重复性都较好。     

Optical and surface morphological properties of triethylamine passivated lead sulphide nanoparticles

The triethylamine capped lead sulphide (PbS) nanoparticles were successfully synthesized by simple wet chemical method. The synthesized product has been characterized by powder X-ray diffraction (XRD), UV–vis spectrophotometry, FTIR spectroscopy, atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence studies. The size of the PbS nanoparticles was determined from AFM, TEM, XRD and from these studies it is found that the size of the particles of the order of 10–15 nm. Significant “blue shift” from bulk material was observed on the PbS nanoparticles using UV–vis and photoluminescence spectrum.     

基于改进相干增强扩散与纹理能量测度和高斯混合模型的导光板表面缺陷检测方法

针对液晶屏(LCD)导光板表面缺陷检测方法存在漏检率和误检率较高,对产品表面复杂渐变的纹理结构适应性差的问题,提出一种基于改进相干增强扩散(ICED)与纹理能量测度和高斯混合模型(TEM-GMM)的LCD导光板表面缺陷检测方法。首先,构建ICED模型,基于结构张量引入平均曲率流扩散(MCF)滤波,使得相干增强扩散(CED)模型对缺陷的细线状纹理有良好的边缘保持效果,并利用相干性得到缺陷纹理增强和背景纹理抑制的滤波后图像;然后,根据Laws纹理能量测度(TEM)提取图像纹理特征,将图像的背景纹理特征作为离线阶段高斯混合模型(GMM)的训练数据,使用期望最大化(EM)算法估计GMM参数;最后,计算待检测图像各像素的后验概率,并将其作为在线检测阶段缺陷像素的判断依据。实验结果表明,该检测方法在导光颗粒随机、规则两种分布的缺陷图像测试数据组上的漏检率和误检率分别为3.27%、4.32%和3.59%、4.87%。所提检测方法适用范围广,可有效检测出LCD导光板表面划痕、异物、脏污和压伤等类型的缺陷。     

Synergistic effects of anisotropy and image force on TEM diffraction contrast of dislocation loops

Based on column approximation (CA) assumption, many-beam Schaeublin–Stadelmann diffraction equations are employed for simulating the transmission electron microscopy (TEM) diffraction image contrast of dislocation loops within thin TEM foil of finite thickness, and two beam and many beam diffraction conditions are compared. Moreover, the effects of materials anisotropy and free surface relaxation induced elastic fields distortion of dislocation loops on the black-white image contrast are specially focused. It is found that anisotropy has a remarkable impact on the TEM image contrast of dislocation loop, and free surface relaxation induced image forces can change the black-white contrast features when dislocation loops are near TEM foil free surfaces. Thus, in order to make reliable judgment on the nature of defects, effects of free surface and anisotropy should be included when analysing irradiation induced dislocation loops and other type of defects in in-situ electron, proton, heavy-ion irradiation experiments under TEM environments.     

Diffuse diffracted features and ordered domain structures in GalnP layers grown by organometallic vapor phase epitaxy

Transmission electron diffraction (TED) and transmission electron microscope (TEM) studies have been made of organometallic vapor phase epitaxial Ga_xIn_1−xP layers (x ≈ 0.5) grown at temperatures in the range 570–690°C to investigate ordering and ordered domain structures. TED and TEM examination shows that the size and morphology of ordered domains depend on the growth temperature. The ordered domains change from a fine rod-like shape to a plate-like shape as the growth temperature increases. The domains are of width 0.6∼2 nm and of length 1∼10 nm. Characteristic diffuse features observed in TED patterns are found to depend on the growth temperature. Extensive computer simulations show a direct correlation between the ordered domain structures and such diffuse features. A possible model is suggested to describe the temperature dependence of the ordered domain structure.     

MOCVD制备过掺杂GaN基稀磁半导体微结构研究

应用MOCVD方法我们在c轴取向的蓝宝石衬底上生长出Fe掺杂和Mn掺杂GaN薄膜。通过改变前驱物的通入量,我们制备出不同掺杂浓度的样品。应用高分辨透射电镜,我们对样品的微结构进行了分析。对于Fe过掺杂GaN样品,我们发现了六角结构的Fe3N团簇的存在,并且Fe3N(0002)面平行于GaN(0002)面;对于Mn过掺杂GaN样品,我们发现了六角结构的Mn6N2.58相的存在,并且Mn6N2.58(0002)面平行于GaN(0002)面。同时,由于晶格中掺入了大量掺杂离子,GaN晶格取向遭到了破坏,导致了部分GaN(0002)面的倾斜。磁学测量表明均一相的Fe掺杂GaN显现铁磁性,而均一相Mn掺杂GaN没有铁磁性。由于铁磁性Fe单晶和Fe3N团簇的存在,相比于均一性Fe掺杂GaN,过掺杂GaN样品的磁性大幅度增强,而Mn过掺杂GaN样品显现出很弱的铁磁性,这有可能来源于Mn6N2.58相。     

ZnxFe3-xO4-α-Fe2O3 纳米多晶材料中的隧道磁电阻效应与微结构

在具有纳米绝缘层的多晶锌铁氧体体系中，当晶界为α－Fe2O3纳米量级的绝缘层时，则构成（ZnxFe3-xO4-α－Fe2O3非均匀体，电子显微分析证实了这种微结构。该体系在0．5T磁场、4．2K温度下，磁电阻效应可达1280％，300K下为158％。     

纳米晶体硅量子点薄膜的制备及表征

利用激光烧蚀沉积法在n-Si（100）衬底上制备非晶硅（α-Si）薄膜,再经过高温退火技术处理使α-Si晶化成纳米硅晶体（nc—Si）量子点．利用拉曼（naman）L谱仪、X射线衍射仪（XRD）、透射电子显微镜（TEM）以及原子力显微镜（AFM）等测试仪器对nc-Si薄膜进行表征,发现制备的nc-Si量子点排列紧密、尺寸均匀,具有很好的单晶结构,制备的nc-Si薄膜晶化比例很高,并且优先选择在[111]方向晶化．     

EPDM/St-An相反转乳液接枝共聚合行为及EPDM-g-SAN对SAN树脂的增韧效应

用"相反转"乳液接枝共聚合法合成了三元乙丙橡胶与苯乙烯-丙烯腈共聚单体的接枝共聚物(EPDM-g-SAN),将其与苯乙烯-丙烯腈共聚物(SAN)树脂共混制备了耐天候老化黄变性能优异的高抗冲工程塑料(AES)。研究了An在共单体中的比率及EPDM/St-An的配比对接枝反应行为及AES的缺口冲击强度的影响。结果表明,随着An比率的增加,单体转化率(CR)出现峰值,其中最高CR为97.5%,接枝率(GR)与接枝效率(GE)则逐渐提高;AES的缺口冲击强度在An的质量百分比为35%~40%范围内出现峰值,其中最大冲击强度为53.0 kJ/m2。SEM和TEM分析表明,An比率为35%的EPDM-g-SAN在SAN树脂基体中有良好的分散性,相界面结合牢固,并证实其AES的增韧机理既有空穴化又有剪切屈服。