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排序方式: 共有9889条查询结果,搜索用时 15 毫秒
61.
通过高温和室温拉伸试验,研究了变形温度和变形程度对Ti-31合金板材性能和组织的影响。结果表明,合金在750~850℃的温度下变形5%~20%空冷后,其室温机械性能均能达到材料的技术指标要求。并发现了材料在900℃的临界变形区。 相似文献
62.
Hongyu Wang Yolande Berta Gary S. Fischman 《Journal of the American Ceramic Society》1992,75(5):1080-1084
The microstructure of silicon carbide whiskers synthesized by carbothermal reduction of silicon nitride has been studied using transmission electron microscopy. All of the whiskers examined are single crystals, and grow in the (111) crystallographic direction. Two different forms of stacking faults and microtwins were observed; in one the planar defects are normal to the whisker growth direction, and the other has the defect planes at an angle of about 70° to the growth axis, while both forms of the defects are on the [111] closed-packed planes. Without the addition of catalyst, droplets containing metallic impurities were not found at the tips of the whiskers synthesized by the present process. A core and outer regions were observed in the single-crystal whiskers, which may be evidence that the whiskers were formed by a two-stage mechanism. 相似文献
63.
A methodology for evaluating the reactivity of titanium with mould materials during casting has been developed. Microhardness
profiles and analysis of oxygen contamination have provided an index for evaluation of the reactivity of titanium. Microhardness
profile delineates two distinct regions, one of which is characterised by a low value of hardness which is invariant with
distance. The reaction products are uniformly distributed in the metal in this region. The second is characterised by a sharp
decrease in microhardness with distance from the metal-mould interface. It represents a diffusion zone for solutes that dissolve
into titanium from the mould. The qualitative profiles for contaminants determined by scanning electron probe microanalyser
and secondary ion mass spectroscopy in the as-cast titanium were found to be similar to that of microhardness, implying that
microhardness can be considered as an index of the contamination resulting from metal-mould reaction. 相似文献
64.
P. Ravirajan S.A. Haque J.R. Durrant D.D.C. Bradley J. Nelson 《Advanced functional materials》2005,15(4):609-618
We report a study of the effects of polymer optoelectronic properties on the performance of photovoltaic devices consisting of nanocrystalline TiO2 and a conjugated polymer. Three different poly(2‐methoxy‐5‐(2′‐ethylhexoxy)‐1,4‐phenylenevinylene) (MEH‐PPV)‐based polymers and a fluorene–bithiophene copolymer are compared. We use photoluminescence quenching, time‐of‐flight mobility measurements, and optical spectroscopy to characterize the exciton‐transport, charge‐transport, and light‐harvesting properties, respectively, of the polymers, and correlate these material properties with photovoltaic‐device performance. We find that photocurrent is primarily limited by the photogeneration rate and by the quality of the interfaces, rather than by hole transport in the polymer. We have also studied the photovoltaic performance of these TiO2/polymer devices as a function of the fabrication route and device design. Including a dip‐coating step before spin‐coating the polymer leads to excellent polymer penetration into highly structured TiO2 networks, as was confirmed through transient optical measurements of the photoinduced charge‐transfer yield and recombination kinetics. Device performance is further improved for all material combinations studied, by introducing a layer of poly(ethylene dioxythiophene) (PEDOT) doped with poly(styrene sulfonic acid) (PSS) under the top contact. Optimized devices incorporating the additional dip‐coated and PEDOT:PSS layers produced a short‐circuit current density of about 1 mA cm–2, a fill factor of 0.50, and an open‐circuit voltage of 0.86 V under simulated AM 1.5 illumination (100 mW cm–2, 1 sun). The corresponding power conversion efficiency under 1 sun was ≥ 0.4 %. 相似文献
65.
A silicide coating was prepared on Ti3SiC2-based ceramic by pack cementation to improve the oxidation resistance of Ti3SiC2, which is a technologically important material for high temperature applications. The microstructure, phase composition and
oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly
composed of TiSi2 and SiC. A single layer of a mixture of SiO2 and TiO2 was formed on the surface of the coated sample during isothermal oxidation at 1100 °C and 1200 °C for 20h. Compared to Ti3SiC2, the parabolic rate constant of silicide coated Ti3SiC2 decreased by 2~3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than
Ti3SiC2 during the cyclic oxidation at 1100 °C for 400 times. However, during the preparation of the coating, a number of fine cracks
formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the
oxidation rate was accelerated, which degraded the oxidation resistance.
Electronic Publication 相似文献
66.
A test has been devised that allows one to determine the work of adhesion and wettability in a system composed of aluminum nitride ceramics with a liquid metal without the need for experimental examination. A correlation is examined between the work of adhesion on the one hand and that criteria or others on the other that have been proposed by various researchers. Forecasts are made for the work of adhesion and wetting angle for a series of metals that have not been examined previously. An experimental check has been made on the forecast adhesion activity for some elements. 相似文献
67.
Ran-Rong Lee 《Journal of the American Ceramic Society》1991,74(9):2242-2249
AIN ceramics with densities varying from 3.18 to 3.30 g/cm3 and room-temperature thermal conductivities varying from 88 to 193 W/m K were produced. Different sintering conditions, packing powders, AIN powder sources, carbon additive, and sintering times were evaluated, and the key processing parameters which cause the differences in density and thermal conductivity were identified. SEM, TEM, and EDS were used to characterize the correlation between thermal conductivity, microstructure, and processing parameters. The important parameters which control the thermal conductivity of AIN ceramics are discussed. 相似文献
68.
A. Edwards Mulpuri V. Rao B. Molnar A. E. Wickenden W. Holland P. H. Chi 《Journal of Electronic Materials》1997,26(3):334-339
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown
on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature
activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is
too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases
the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the
damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have
indicated a redistribution in the measured profiles of Mg due to annealing. 相似文献
69.
Ti wire electrodes were immersed in acidic solutions containing H2SO4 and HCl of various concentrations at 353 K to evaluate corrosion rate by measurement of electric resistance change (resistometry). Addition of hydrochloric acid to sulphuric acid solution promoted depassivation of Ti. After depassivation, the immersion potential dropped to the hydrogen evolution potential and a hydride layer was formed on the surface. The hydride layer dissolved continuously in the acidic solution. SEM observation showed that Ti wires dissolved almost uniformly in the early stage and that the dissolution then trace became irregular due to nonuniform growth of the hydride layer. Dissolution rate of a Ti wire was estimated almost accurately by resistometry. 相似文献
70.
主要是以氧化镓为原料,通过气相沉积法,制备出GaN纳米线和纳米带.通过X-射线衍射(XRD),扫面电镜(SEM)和高分辨透射电镜(HRTEM)等测试手段对其形貌进行了表征和分析.研究了实验过程中工艺条件的改变对所制备GaN纳米结构形貌特征的影响.对两种GaN纳米材料的拉曼散射光谱进行了分析. 相似文献