反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。     

Inhibiting and deactivating effects of water on the selective catalytic reduction of nitric oxide with ammonia over MnOx/Al2O3

The effect of water on the selective catalytic reduction (SCR) of nitric oxide with ammonia over alumina supported with 2–15 wt.-% manganese oxide was investigated in the temperature range 385–600 K, with the emphasis on the low side of this temperature window. Studies on the effect of 1–5 vol.-% water vapour on the SCR reaction rate and selectivity were combined with TPD experiments to reveal the influence of water on the adsorption of the single SCR reactants. It turned out that the activity decrease due to water addition can be divided into a reversible inhibition and an irreversible deactivation. Inhibition is caused by molecular adsorption of water. TPD studies showed that water can adsorb competitively with both ammonia and nitric oxide. Additional kinetic experiments revealed that adsorbed ammonia is present in excess on the catalyst surface, even in the presence of water. Reduced nitric oxide adsorption is responsible for the observed reversible decrease in the reaction rate; the fractional reaction order changes from 0.79 in the absence of water to 1.07 in its presence. Deactivation is probably due to the dissociative adsorption of water, resulting in the formation of additional surface hydroxyls. As the amount of surface hydroxyls formed is limited to a saturation level, the deactivating effect on the catalyst is limited too. The additional hydroxyls condense and desorb in the temperature range 525–775 K, resulting in a lower degree of deactivation at higher temperature. A high temperature treatment at 775 K results in a complete regeneration. The amount of surface hydroxyls formed per unit surface area decreases at increasing MnO_x-loading. The selectivity to the production of nitrogen is enhanced significantly by the presence of gas phase water.     

Reactivity of steam in exhaust gas catalysis III. Steam and oxygen/steam conversions of propane on a Pd/Al2O3 catalyst

A 1% Pd catalyst (38% dispersion) was prepared by impregnating a γ-alumina with palladium acetylacetonate dissolved in acetone. The behaviour of this catalyst in oxidation and steam reforming (SR) of propane was investigated. Temperature-programmed reactions of C₃H₈ with O₂ or with O₂ + H₂O were carried out with different stoichiometric ratios S(S =[O₂]/5[C₃H₈]). The conversion profiles of C₃H₈ for the reaction carried out in substoichiometry of O₂ (S < 1) showed two discrete domains of conversion: oxidation at temperatures below 350°C and SR at temperatures above 350°C. The presence of steam in the inlet gases is not necessary for SR to occur: there is sufficient water produced in the oxidation to form H₂ and carbon oxides by this reaction. Contrary to what was observed with Pt, an apparent deactivation between 310 and 385°C could be observed with Pd in oxidation. This is due to a reduction of PdO_x into Pd⁰, which is much less active than the oxide in propane oxidation. Steam added to the reactants inhibits oxidation while it prevents the reduction of PdO_x into Pd⁰. Compared to Pt and to Rh, Pd has a higher thermal resistance: no deactivation occurred after treatment up to 700°C and limited deactivation after treatment up to 900°C, provided that the catalyst is maintained in an oxygen-rich atmosphere during the cooling.     

Catalytic oxidation of sulphide ions to elementary sulphur in aqueous solutions over transition metal oxides

The catalytic activity of a wide range of transition metal oxides in oxidation of sulphide ions by air in aqueous medium was studied. Some specific features of the reaction mechanism on some of the studied oxides were considered. The transition metal oxides are promising catalysts for practical application. Some of these oxides will allow the preparation of catalysts possessing activity comparable to that of the cobalt phthalocyanine based catalysts, popular in industrial practice.     

氮化钛薄膜的高分辨AES谱和XPS谱研究

着重讨论了TiNx薄膜俄歇电子谱的定量分析方法和X射线光电子谱中线形的变化。利用已知组元强度定量分析技术和Ti的LMV俄歇电子峰，探讨TiNx薄膜中N含量的定量方法。由该方法给出的定量结果与X射线光电子谱定量结果相一致。同时，利用X射线光电子谱测定了TiN和Ti2N2p轨道的结合能。并针对Ti2p峰形随N含量的变化，给出新的解释。     

薄Si膜对基底表面粗糙度的影响

利用ＺＹＧＯ光学干涉测量仪，散射积分测量法观测了光学元件表面均方根粗糙度．详细分析了薄Ｓｉ膜对基底均方根粗糙度的影响，由此认为薄膜并不总是复制基底表面的粗糙度，结果出现了薄膜降低表面粗糙度的现象．提出了一定厚度范围的薄Ｓｉ膜的表面粗糙度存在着一个稳定值的新设想．     

添加剂对尖晶石型锰酸锂性质表征的影响

以LiOH·H_20和MnO_2为原料,分别掺入H_2BO_3、Al_2O_3、SiO_2和P_2O_5等添加剂,用固相分段法制备尖晶石型锰酸锂。结果表明,SiO_2和P_2O_5可以有效地改善LiMn_2O_4的电化学性能,H_3BO_3对锰酸锂的电化学性能影响不大,而Al_2O_3破坏了LiMn_2O_4的电化学性能。面扫描结果显示,Si或P元素各自都均匀地分散于LiMn_2O_4的物相中。从元素电负性和原子半径的角度分析了B、Si、P和Al元素对尖晶石型LiMn_2O_4结构和性能的影响。     

Sensitizing Mechanism and Adsorption Properties of Dye—Sensitized TiO2 Thin Films

The dye-sensitized TiO2 complex films were prepared by the dye coat onto TiO2 surfaces,and the sensitizing mechanism and adsorption properties of the dye-sensitized TiO2 complex films were inverstigated.The influence of the application conditions of dye adsorbed on TiO2 films on the amount of dye adsorption was discussed.Experimental results show that the concentration,the temperature of dye solutions and the dipping time of TiO2 films in the dye solutions have a significant influence on the amount of dye adsorption.Cell test indicates that the conversion efficiency of light to electricity increases with the amount of dye adsorption.     

Sputter deposition technology as a materials engineering

Sputter deposition is currently being widely used in the microelectronics industry for the production of silicon integrated circuits. Recently interest has been focused on sputter deposition as a new materials processing technique. The highly energetic sputtered atoms enhance crystal growth and/or sintering during film growth. This results in lowering of the growth temperature of high temperature materials including cubic diamonds. Single crystals of complex ceramics materials could be prepared by sputter deposition through epitaxial growth process. Atomically controlled deposition using multi-target sputter enables to make man-made superlattice including high-T _C superconductors of layered perovskite. At present sputter deposition is one of key materials technologies for the coming century.     

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

Thin CdTe films were deposited by hot-wall epitaxy (HWE) on (111) HgCdTe and CdZnTe substrates at temperatures from about 140 to 335°C. X-ray rocking curves were used to show that crystal quality of the CdTe (111)B films improved as substrate temperature increased from 140 to about 250°C. Rocking curve values for full width at half maximum (FWHM) decreased from 2–4 degrees at 140–150°C to less than 100 arc-s at 250°C, and a FWHM of 59 arc-s was the lowest value observed near 250°C. The FWHM of the HWE CdTe was found to be insensitive to growth rate below about 400Å/min, but increased to four degrees at 1250Å/min. X-ray diffraction confirmed that films grown on the B-face at higher temperatures were epitaxial, but contained a significant volume fraction, 35% to 50%, of rotational in-plane twins. Electron microscopy confirmed a coarse twin density, and photoluminescence spectra showed an absence of excitonic emission in the HWE films. Simultaneous growth on two (111) HgCdTe substrates with different surface polarities between 230°C and 335°C showed that deposition rate on the A-face decreased relative to that on the B-face as temperature increased. Films grown on the B-face exhibited better surface morphologies than those grown on the A-face.