退火温度对掺杂钼板性能的影响

本文简述了退火温度对掺杂钼板的室温抗拉性能、弯曲塑－脆转变温度及室浊反复弯曲性能影响。试样经１３００℃真空退火－小时后，其室温抗拉强度为５８５ＭＰａ，伸长率为３１％，弯曲塑－脆转转变温度低于－７８℃，室浊进反复弯曲９０度的次２１次；经１８００℃退火后，其室温抗拉强度为４９５ＭＰａ，伸长率为４８％，弯曲塑－脆转变温度为４０℃，室温时反复弯曲９０度的次数为６次。     

掺杂石墨/Cu钎焊接头残余应力的分布特征及中间层的作用

利用有限元方法,模拟分析了掺杂石墨/Cu钎焊接头残余应力的分布特征。分析结果表明,对接头有害的较大残余应力分布在石墨棱角距离焊缝约0.8mm处的狭小区域;降低连接温度、减少连接时间及增加钎焊压力均有利于减小接头残余应力,优化接头的界面应力状态;中间层的加入在一定程度上缓和了接头的残余应力。从缓和效果来看,Cu比Mo作中间层好,而Cu/Mo复合中间层的缓和效果最好,是较理想的中间层材料。     

Yb3+掺杂KLa(WO4)2激光晶体生长与光谱分析

采用提拉法生长出掺镱钨酸镧钾[Yb:KLa(WO4)2,Yb:KLW]晶体,测试了晶体的红外光谱和Raman光谱,对出现的振动模式进行了归属.从X射线衍射分析得到晶胞参数a=b=0.532 nm,c=1.189 nm.通过热重-差热分析得到晶体的熔点为1 119 ℃,在熔点以下没有相变.测试了晶体的吸收光谱和荧光光谱,计算了相应的光谱参数.结果表明:该晶体发射波长为1 021 nm,在931,981 nm附近有较强、较宽的吸收峰,适合用InGaAs半导体激光泵浦.     

Mn2+在Zn2SiO4中的发光

利用Sol-gel法制备掺Mn^2 的Zn2SiO4的前驱体，并将前躯体在弱氧化气氛下在1000℃煅烧2h，得到掺Mn^2 的Zn2SiO4试样。X射线衍射分析确定试样为α-Zn2SiO4晶相。荧光分析测定试样的激发光谱和发射光谱。结果显示Mn^2 掺杂的α-Zn2SiO4可发蓝色和绿色荧光，这一结果显然不同于以前的文献报道。同时，我们讨论了Mn^2 在Zn2SiO4中产生这一新型发光性质的机理。     

不同Li/Nb摩尔比In∶Fe∶LiNbO_3晶体的生长及其光学性能

在Li NbO3(LN)中掺摩尔分数为1%的In和掺质量分数为0.03%的Fe,用提拉法技术生长具有不同n(Li)/n(Nb)[n(Li)/n(Nb)=0.94,1.05,1.20,1.38]的In∶Fe∶LN晶体。测试不同n(Li)/n(Nb)的In∶Fe∶LN晶体的吸收光谱、抗光致散射能力和指数增益系数,并计算晶体的有效载流子浓度。结果表明晶体样品随着n(Li)/n(Nb)增加,吸收光谱的吸收边发生紫移,抗光致散射能力增加,指数增益系数和有效载流子浓度增大。采用n(Li)/n(Nb)=1.38的In∶Fe∶LN晶体作记录介质,n(Li)/n(Nb)=1.05的In∶Fe∶LN晶体作位相共轭镜进行全息关联存储实验。实验表明存储系统具有实时处理,成像质量好,信噪比高和能反复使用等优点。     

Synergistic effects of doped Fe3+ and deposited Au on improving the photocatalytic activity of TiO2

Fe³⁺ doped together with Au deposited TiO₂ (Au/Fe³⁺–TiO₂) was successfully prepared, which shows excellent photocatalytic activity for degradation of methyl orange (MO) under both UV and visible light (λ > 420 nm) illumination. Fe³⁺ has been confirmed by EPR to substitute for Ti⁴⁺ in the TiO₂ lattice, and Au exists as Au⁰ on the surface of the photocatalyst indicated by the results of XRD. Fe³⁺ and Au have synergistic effects on improving the photocatalytic activity of TiO₂. A proposed mechanism concerning the synergistic effects is discussed to explain the improvement of the photocatalytic activities.     

Mg:Mn:Fe:LiNbO3晶体的全息存储性能

在同成分铌酸锂晶体中掺入0.03?2O3和0.1%MnO2(质量分数),分别掺入0,1%,3%,4.5%,6%的MgO(摩尔分数),用提拉法生长了一系列Mg:Mn:Fe:LiNbO3晶体.检测了Mg:Mn:Fe:LiNbO3晶体的红外光谱和抗光损伤能力.掺0,1%,3%,4.5%Mg的Mg:Mn:Fe:LiNbO3晶体的OH-红外振动峰位于3484cm-1,而掺6%Mg的Mg:Mn:Fe:LiNbO3晶体红外振动峰移到3 535gm-1.采用波长为632nm的He-Ne激光器作为光源,通过二波耦合方法测试晶体的全息存储性能.结果表明:Mg:Mn:Fe:LiNbO3晶体的写入时间和动态范围随掺镁量的增加而显著减小,而光折变灵敏度略有上升,抗光损伤性能增强,其中掺镁量为3%Mg:Mn:Fe:LiNbO3晶体更适合作为全息存储介质.     

硫化镉微晶掺杂玻璃及薄膜的制备与光学性能的研究

用溶胶－凝胶法制备了硫化镉微晶掺杂玻璃和薄膜材料，使用了三种不同的方法引入所需的Ｓ＾２－离子，通过Ｘ射线和透射电镜等实验手段，分析了微晶结构显微相，标定出晶体确为ＣｄＳ，并测得微晶的尺寸。从室温吸收光谱上观察到吸收截止边随着ＣｄＯ掺杂凝胶在１５０℃时通Ｈ２Ｓ气体时间的延长（１－８ｈ）而移向长波方向，从而确定其为量子尺寸效应的实验依据。在Ｎｄ：ＹＡＧ强激光光场的作用下，薄膜样品中观察到二次谐波信号，     

室温固相合成掺杂ZnO纳米粉体制备ZnO压敏电阻

以金属离子盐和草酸为原料,采用室温固相化学反应合成掺杂ZnO前驱物,根据DSC-TG分析结果,将其在450℃热分解2 h,得到掺杂ZnO粉体,并用此粉体制备了片式ZnO压敏电阻。借助XRD、TEM、BET等检测手段对粉体产物的物相、形貌、粒度等进行了表征。研究了烧结温度对ZnO压敏电阻电性能的影响。结果表明,所制备的粉体为平均粒径24 nm左右、颗粒呈球状、分散性好的纤锌矿结构掺杂ZnO。在1 080℃烧结时,ZnO压敏电阻的综合电性能达到最佳,电位梯度为791.64 V/mm,非线性系数为24.36,漏电流为43μA。     

Characterization of boron-doped diamond electrodes by electrochemical impedance spectroscopy

Charge transfer on boron doped diamond (BDD) electrodes was studied by cyclic voltammetry and electrochemical impedance spectroscopy. The diamond films of 5 μm thickness and boron content between 200 ppm and 3000 ppm were prepared by the hot filament CVD technique on niobium substrate and mounted in a Teflon holder as rotating disk electrodes. The electrochemical measurements were carried out in aqueous electrolyte solutions of 0.5 M Na₂ SO ₄ + 5 mM K₃[Fe(CN)₆]/K₄[Fe(CN)₆]. Significant deviation in the redox behaviour of BDD and active Pt electrodes was indicated by a shift of the peak potentials in the cyclic voltammograms with increasing sweep rate and lower limiting diffusion current densities under rotating disk conditions. In the impedance spectra an additional capacitive element appeared at high frequencies. The potential and rotation dependence of the impedance spectra can be described quantitatively in terms of a model based on diffusion controlled charge transfer on partially blocked electrode surfaces. Direct evidence for the non-homogeneous current distribution on the diamond surface was obtained by SECM measurements.