Enhanced charge generation in doped organic/organic p–n heterojunction for improving the performance of tandem organic light emitting diode

The doped organic/organic p–n heterojunctions have been applied as charge generation structure (CGS) in tandem organic light emitting diodes (TOLEDs). It is found that the field‐induced charge generation takes place more efficiently at the interface between Li₂CO₃ n‐doped bathocuproine (BCP:Li₂CO₃) and MoO₃ p‐doped 4,4′‐N ,N′‐dicarbazole‐biphenyl (CBP:MoO₃) than at the interface between BCP:Li₂CO₃ and MoO₃ p‐doped 4,4‐bis[N‐1‐naphthyl‐N‐phenylamino]biphenyl (NPB:MoO₃). It is because the process of electrons tunneling through the depletion zone from the highest occupied molecular orbit (HOMO) of CBP:MoO₃ to the lowest unoccupied molecular orbit (LUMO) of BCP:Li₂CO₃ is more efficient than that from the HOMO of NPB:MoO₃ to the LUMO of BCP:Li₂CO₃. Compared to the TOLED using the conventional CGS of 10‐nm BCP:Li₂CO₃/20‐nm NPB:MoO₃, the one using the CGS of 10‐nm BCP:Li₂CO₃/10‐nm CBP:MoO₃/10‐nm NPB:MoO₃ shows increased device performance. In addition, the interconnecting property of CGS of 10‐nm BCP:Li₂CO₃/x nm CBP:MoO₃/20 ? x nm NPB:MoO₃ shows a strong dependence on the thickness of CBP:MoO₃. We provide a new insight on optimizing Ohmic loss in the CGSs, useful for improving the performance of TOLEDs.     

Electronic properties and gas adsorption behaviour of pristine,silicon-, and boron-doped (8, 0) single-walled carbon nanotube: A first principles study

Carbon nanotubes (CNTs) have received enormous attention due to their fascinating properties to be used in various applications including electronics, sensing, energy storage and conversion. The first principles calculations within density functional theory (DFT) have been carried out in order to investigate the structural, electronic and optical properties of un-doped and doped CNT nanostructures. O₂, CO₂, and CH₃OH have been chosen as gas molecules to study the adsorption properties based on zigzag (8,0) SWCNTs. The results demonstrate that the adsorption of O₂, CO_2, and CH₃OH gas molecules on pristine, Si-doped and B-doped SWCNTs are either physisorption or chemisorption. Moreover, the electronic properties indicating SWCNT shows significant improvement toward gas adsorption which provides the impact of selecting the best gas sensor materials towards detecting gas molecule. Therefore, these pristine, Si-, and B-doped SWCNTs can be considered to be very good potential candidates for sensing application.     

CsI：Tl晶体生长中存在的问题及其解决途径

用Ｂｒｉｄｇｍａｎ方法制备了掺铊的碘化铯晶体，样品经过切割，研磨和抛光，观察了它们的缺限，测定其光学性质，结果表明，气泡，包裹体和局部开裂严重地影响晶体的光学质量和完整性，通过使用高纯试剂，惰性气氛生长，分段和均匀掺杂，窄的熔区和合适的温度梯度，能够明业改善晶体的性质和质量。     

环形腔高掺Er3 窄线宽光纤激光器实验研究

报道了采用光纤光栅（FBG）短直腔选频结构的环形腔窄线宽光纤激光器。采用约3m长高掺Er^3光纤，LD抽运阈值功率约为11mW，在25mW976nm有效抽运功率时输出信号功率为2．65mW，斜效率约为15％；输出激光3dB线宽小于0．01nm，20dB线宽小于0．04nm，边模抑制比（SMSR）为48dB；观察到输出信号光波长漂移范围为0．06nm。     

稀土元素对掺杂钨粉还原过程及性能的影响

利用中止还原的方法,研究了稀土元素对掺杂钨粉还原过程及其性能的影响。结果表明,在同样的还原工艺条件下,稀土元素能使掺杂钨粉的还原速率减小,分裂时间更晚,但最终的钨粉粒度更细小,可获得几百纳米的超细钨粉。还原后,粉末的形貌由准球形转变为规则的立方体形。稀土元素还促进钨粉中钾含量的提高。     

基板温度对SnO2:Sb薄膜结构和性能的影响

以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响。实验表明 550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在 650℃下沉积的薄膜具有最低的方块电阻值,为 72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。     

Sol-Gel Synthesis and Luminescent Characteristic of Doped Eu^3 ＋ Silicate-Silica Phosphor

Silicagelphosphorsdopedrareearthionshave attractedgreatattentionofmanyresearchersdueto theseadvantages,suchashighersamplehomogeneity,purityandstable,efficientandenvironmentallyfriend lyphotoluminescencematrixmaterials,whichisless toxicleadtonetconversione…     

添加Fe3+对二氧化钛薄膜吸收光谱及光催化活性的影响

用阳极氧化法制备多孔状的纳米晶二氧化钛薄膜,通过往阳极氧化的电解液中添加Fe3 ,使其进入二氧化钛薄膜中,研究了掺杂Fe3 对二氧化钛薄膜吸收光谱和光催化活性的影响.在阳性氧化时通过往电解液中添加不同含量的Fe3 可以制得掺杂Fe3 浓度不同的薄膜,研究了掺杂Fe3 浓度不同对薄膜吸收光谱和光催化活性的影响.用X射线衍射、扫描电子显微镜、紫外-可见吸收光谱仪和X光电子能谱对薄膜进行了表征.实验发现掺杂Fe3 使二氧化钛薄膜对入射光的吸收带边发生红移,讨论了其作用机制.     

Electrical and optical characterization of Na: CuInS2 thin films grown by spray pyrolysis

The structural, electrical and optical properties of Na-doped CuInS₂ thin films grown by spray pyrolysis were studied. These films crystallized in the sphalerite structure of CuInS₂, and showed to contain traces of indium sulfide and CuIn₅S₈ as impurity phases. All films were In-rich and showed p-type conductivity. The film conductivity was strongly affected by Na-doping, which decreased from 10⁻² to 10⁻⁵ S/cm by increasing the [Na]/[Cu] ratio from 0.005 to 0.03 in the spray solution. The band gap energy was observed to increase, from 1.4 to 1.45 eV, with increasing the [Na]/[Cu] ratio. Our results suggested that Na could be an effective acceptor impurity in sprayed CuInS₂.     

Influence of TiO_2 on the Alkali Resistance and Structure of Invert Glass

1　IntroductionTheinvertglassisakindofglasswhosenumberofbridgeoxygenyisnotbiggerthan 3.WhenthereisonlyoneglassformerSiO2 ,itsmolarcontentisnomorethan66 .7% .Onthisoccasion ,theglassstructuremaychangefromthree dimensionalconsecutivenetworktolaminarnetwork (y =3) ,chainstructure (y =2 ) ,andislandstructure (y =0 ) [1].TheinfluenceofTiO2 onthealkaliresistanceandstructureintheinvertglasshasnotbeenreported .Thispaperwilldiscussitindetail.2　ExperimentalThematerialsusedwerechemicalpureSiO2 ,TiO…