Electrical and optical properties dependence on evolution of roughness and thickness of Ga:ZnO films on rough quartz substrates

The paper studies GZO films deposited on quartz substrates by a laser deposition system. The XRD and AFM results as well as the calculation of height-height correlation function H (r, t) and its parameters w(t) and ξ(t) reveal that the film growth can be divided into two stages, and that the turning point of these two stages is the time when the film exhibits fractal characteristics. The influence of thickness and morphology roughness evolution on the electrical resistivity and optical transmittance in these two stages are described. It is found that the electrical resistivity mainly depends on the film thickness in the first stage, while in the following stage, the film possess self-affine fractal characteristics. The morphology roughness evolution plays an important role in the resistivity. The transmittance is found to decrease with the increase of film thickness in the two stages and it is also found to be sensitive to the evolution of surface roughness. The lowest resistivity obtained is 4.85 × 10^− 4 Ω cm with an average optical transmittance of 85% in the 200 nm thick film deposited for 10 min.     

Properties of Ni doped and Ni-Ga co-doped ZnO thin films prepared by pulsed laser deposition

ZnNiO and Zn(Ni,Ga)O thin films were prepared on glass substrates by pulsed laser deposition. The obtained films are of good crystal quality and have smooth surfaces, which have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Ga or Ni related phases. Hall-effect measurements showed that the ZnNiO film is n-type, in which the carrier concentration would be greatly enhanced by the addition of Ga. Room temperature ferromagnetism is observed for the ZnNiO and Zn(Ni,Ga)O films. The addition of Ga into the ZnNiO films increases the electron concentration but weakens the room temperature ferromagnetism.     

Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

Thin and transparent films of doped cadmium sulfide (CdS) were obtained on commercial glass substrates by Chemical Bath Deposition (CBD) technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.     

过冷度对重掺B直拉Si单晶中小角晶界的影响

小角晶界是Si单晶中的严重缺陷,生产中需要极力避免。对于重掺B直拉<111>Si单晶,当掺杂浓度接近固溶度时就容易产生小角晶界。对直拉Si单晶中小角晶界产生的原因进行梳理及深入分析,在理论上提出减少过冷度来减少小角晶界缺陷的方法。分别采用增加加热器功率减小过冷度及降低埚位减少过冷度的两种工艺方法,成功实现生长无小角晶界重掺B<111>Si单晶。通过生产中实际晶体生长情况对比分析发现,低埚位生长无小角晶界的重掺B直拉<111>Si单晶工艺更具备生产优势。     

Mn-Y／TiO2低温NH3选择性催化还原NO性能研究

研究了稀土金属Y掺杂MWTiO2催化剂的低温NH3选择性催化还原NO性能。采用溶胶凝胶法制备Y掺杂的TiO2载体,负载前驱体硝酸锰构成了Y掺杂的Mn-Y／TiO2催化剂。考察Y的掺杂量,操作条件如反应温度、氧含量、进口NO浓度和空速等因素对其催化还原NO性能的影响。结果表明,Y与Ti的最佳摩尔比为1．5％,X射线衍射（X-ray diffraction,XRD）分析Y掺杂抑制了锐钛矿晶相的转移,有利于催化剂比表面积增大,从而提高催化剂的活性;在反应温度180℃、空速14000h-1、氧含量为3％、NO浓度0．060／0及体积比 φ（NH3）/φ（NO）为1的条件下,Mn负载量为5％,焙烧温度500℃下制备的MnTiY催化剂对NO的转化率达到93．5％。     

2μm InGaSb/AlGaAsSb应变量子阱激光器的MBE生长研究

摘要：对InGaSb/AlGaAsSb应变量子阱和GaSb接触层掺Te的MBE生长进行了研究。通过原子力显微镜(AFM)、X射线衍射(XRD)设备、光致发光谱(PL)测试,对应变量子阱的生长参数进行了优化。量子阱室温PL测试,发光波长为1.98 μm,半峰宽为115nm。通过Hall测试优化了GaSb外延掺Te的生长参数,最优的掺杂浓度为1.1271018 cm-3,电阻率为5.29510-3Ω?cm。     

N掺杂Ta2O5的制备及其光催化分解水制氢性能研究

通过对Ta2O5程序升温的氮化方法,制备了在可见区具有较强吸收的N掺杂Ta2O5光催化剂,并采用X射线衍射(XRD)、UV-Vis漫反射光谱、X射线荧光(XRF)、扫描电镜(SEM)等化学物理手段对其进行了表征,其吸收阈约为630nm,带隙约为2.0eV。在乙醇和Na2S-Na2SO3牺牲剂体系中,研究了N掺杂Ta2O5催化剂的可见光催化分解水制氢性能,并考察了采用光还原法在N掺杂Ta2O5表面上负载贵金属Ru对光催化剂的产氢活性影响,探讨了Ru的负载量与产氢速率的关系,结果表明在N掺杂Ta2O5表面上负载贵金属Ru可明显提高其产氢活性,Ru的最佳负载量约为0.1 wt.%。     

ZnO缓冲层上低温生长Al掺杂的ZnO薄膜

采用射频磁控溅射法在ZnO缓冲层上制备了不同Al掺杂量的ZnO（AZO）薄膜。利用X射线衍射（XRD）、扫描电子显微镜（SEM）和光致发光（PL）等表征技术,研究了AZO薄膜的微观结构、表面形貌和发光特性。结果表明,随着Al掺杂量的增加,ZnO薄膜的择优取向性发生了改变,且当Al的掺杂量为0.81%（原子分数）时,（002）衍射峰与其它衍射峰强度的比值达到最大,表明适合的Al掺杂使ZnO薄膜的择优取向性得到了改善。在可见光范围内薄膜的平均透过率超过70%。通过对样品光致发光（PL）谱的研究,发现所有样品出现了3个发光峰,分别对应于以444nm（2.80eV）、483nm（2.57eV）为中心的蓝光发光峰和以521nm（2.38eV）为中心较弱的绿光峰。并对样品的发光机理进行了详细的探讨。     

Ce3+共掺杂对Y2O3:Eu3+荧光粉的发光性能和颗粒形貌的影响

采用化学反应与高温固相反应相结合的方法制备了Ce3和Eu3+共掺杂Y2O3荧光粉,利用X射线衍射和扫描电镜分析,发现Ce3+离子共掺杂对Y2O3:Eu3+荧光粉的颗粒形貌有显著的影响,随着Ce3+离子浓度的改变,形貌可从球型转变为管状.荧光光谱分析表明,所制备的共掺杂荧光粉主要发射位于614纳米的红光峰和位于587纳米...     

Ni2+掺杂近化学计量比铌酸锂晶体的近红外发光特性

研究了Ni2+掺杂近化学计量比铌酸锂(Ni2+:SLN)晶体的近红外发光特性.用980 nm LD光激发,Ni2+:SLN单晶的近红外发光中心位于1087 nm,荧光峰半高宽约为72 nm.晶体荧光衰减特性的测定结果表明,其室温荧光寿命为～240μs.晶体的近红外的宽带发光,源于Ni2+离子八面体格位的3T2g(3F)...