Hydrothermal synthesis of hexagonal ZnO clusters

Hydrothermal process was applied to synthesize zinc oxide nanocrystals. X-ray powder diffraction and scanning electron microscopy were used to analyze the crystal structure and surface morphology. XRD pattern analysis showed that the ZnO clusters are single hexagonal phase of wurtzite structure (space group P63 mc) with no impurity of Zn and Zn(OH)₂. Also, SEM images revealed that the size of a single ZnO crystal is between 200-500 nm in diameter and 2-5 μm in length. The influence of potassium iodide (KI) as a surfactant on the crystallinity of ZnO has been investigated.     

Formation of mushroom-like ZnO microcrystals through a solution calcination process

Mushroom-like ZnO microcrystals have been prepared via a solution calcination route, using Zn(NO₃)₂ as Zn source in the absence of any surfactants, templates or catalysts. This is the first example to prepare mushroom-like crystals as semiconductors, which are expected to show particular physical properties. The ZnO products were investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectrum measurements. A suitable concentration of Zn(NO₃)₂ solution was important for the growth of the mushroom-like products. The reported synthetic procedure is straightforward and inexpensive, and thus can be readily adopted to produce large quantities of mushroom-like ZnO microcrystals.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

GPS接收机多径误差及窄相关性能分析

减少GPS接收机多径干扰的办法是采用特殊天线和在接收机中采取一定的措施。文中针对窄相关技术展开分析。重点分析影响接收机多径误差的因素及窄相关的性能，并给出仿真及分析结果。     

单片微型计算机键盘接口设计

介绍了单片机系统中矩阵式键盘的特点和工作原理，以及大规模集成电路8255A。给出了8255A和MCS-51单片机的接口电路，以及实际应用中的软件设计框图等。     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

Surface structural change of ZnO-coated LiNi0.5Mn1.5O4 spinel as 5 V cathode materials at elevated temperatures

LiNi_0.5Mn_1.5O₄ powder was synthesized via sol-gel method and coated with ZnO in order to test the electrochemical cyclability of the material as a cathode for the secondary Li battery in the 5 V range at 55 °C. The ZnO-coated LiNi_0.5Mn_1.5O₄ powder nearly maintained its initial capacity of 137 mA h g⁻¹ after 50 cycles whereas the uncoated powder was able to retain no more than 10% of the initial capacity after 30 cycles. TEM analysis of the cycled cathodes suggests that the formation of the graphitic surface phase, hindering the Li migration, may be responsible for the rapid capacity loss of the uncoated material while no such phase was observed on the surface of the ZnO coated LiNi_0.5Mn_1.5O₄ powder.     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

在道岔缺口超标报警系统中的软件设计

介绍了SED1335的性能及特点，重点阐述了它在道岔缺口超标报警系统中显示字符、汉字、构建友好界面的软件设计方法，提出了编写液晶显示程序的一些优良算法。     

高性能片式多层氧化锌压敏电阻器材料研究

对非Bi系氧化锌压敏电阻材料进行了系统研究。研究结果表明:在ZnO基体材料中,添加适量PbO、Co2O3、Cr2O3、MnO2、ZrO2、TiO2、Sb2O3 、B2O3等非Bi系添加剂,采用传统陶瓷制备工艺和合适烧结工艺,可获得a >50、IL<1 mA、烧结温度低于1 100℃的实用非Bi系氧化锌电阻瓷料。采用该瓷料,利用MLC工艺,选用Pd30/Ag70电极浆料,制作出V1mA<30 V、a >30、IL<1 mA的片式多层压敏电阻器。