全文获取类型
收费全文 | 6390篇 |
免费 | 786篇 |
国内免费 | 525篇 |
专业分类
电工技术 | 165篇 |
综合类 | 286篇 |
化学工业 | 2139篇 |
金属工艺 | 342篇 |
机械仪表 | 69篇 |
建筑科学 | 95篇 |
矿业工程 | 30篇 |
能源动力 | 321篇 |
轻工业 | 123篇 |
水利工程 | 6篇 |
石油天然气 | 62篇 |
武器工业 | 21篇 |
无线电 | 1381篇 |
一般工业技术 | 2366篇 |
冶金工业 | 123篇 |
原子能技术 | 40篇 |
自动化技术 | 132篇 |
出版年
2024年 | 20篇 |
2023年 | 133篇 |
2022年 | 130篇 |
2021年 | 295篇 |
2020年 | 256篇 |
2019年 | 249篇 |
2018年 | 284篇 |
2017年 | 338篇 |
2016年 | 359篇 |
2015年 | 312篇 |
2014年 | 455篇 |
2013年 | 471篇 |
2012年 | 475篇 |
2011年 | 676篇 |
2010年 | 437篇 |
2009年 | 515篇 |
2008年 | 446篇 |
2007年 | 452篇 |
2006年 | 356篇 |
2005年 | 222篇 |
2004年 | 181篇 |
2003年 | 146篇 |
2002年 | 86篇 |
2001年 | 67篇 |
2000年 | 83篇 |
1999年 | 58篇 |
1998年 | 45篇 |
1997年 | 34篇 |
1996年 | 29篇 |
1995年 | 18篇 |
1994年 | 21篇 |
1993年 | 16篇 |
1992年 | 11篇 |
1991年 | 13篇 |
1990年 | 3篇 |
1989年 | 3篇 |
1988年 | 2篇 |
1987年 | 1篇 |
1985年 | 1篇 |
1984年 | 1篇 |
1976年 | 1篇 |
排序方式: 共有7701条查询结果,搜索用时 15 毫秒
11.
We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼103 ION/IOFF ratio, stable endurance cycles (102 cycles) and retention times (104 s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code. 相似文献
12.
In this work, ZnO nanostructures are electrodeposited on a transparent conducting glass from chloride baths. The influence of H2O2 concentration on the electrochemical characteristics has been studied using cyclic voltammetry (CV) and chronoamperometry (CA) techniques. From the analysis of the current transients on the basis of the Scharifker–Hills model, it is found that nucleation mechanism is progressive with a typical three-dimensional (3D) nucleation and growth process; independently with the concentration of H2O2. However, the nucleation rate of the ZnO changes with the increase of H2O2 concentration. The Mott–Schottky measurements demonstrate an n-type semiconductor character for all samples with a carrier density varying between 5.14×1018 cm−3 and 1.47×1018 cm−3. Scanning electron microscopy (SEM) observations show arrays of vertically aligned ZnO nanorods (NRs) with good homogeneity. The X-ray diffraction (XRD) patterns show that the ZnO deposited crystallises according to a hexagonal Würtzite-type structure and with the c-axis perpendicular to the electrode surface. The directional growth along (002) crystallographic plane is very important for deposits obtained at 5 and 7 mM of H2O2. The high optical properties of the ZnO NRs with a low density of deep defects was checked by UV–vis transmittance analyses, the band gap energy of films varies between 3.23 and 3.31 eV with transparency around 80–90%. 相似文献
13.
《Ceramics International》2015,41(7):8614-8622
SnO2–ZnO nanocomposite thin films, prepared by a simple carbothermal reduction based vapor deposition method, were irradiated with 8 MeV Si3+ ions for engineering the morphological and optical properties. The surface morphology of the nanocomposites was studied by atomic force microscopy (AFM), while the optical properties were investigated by photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM studies on the irradiated samples revealed growth of nanoparticles at lower fluence and a significant change in surface morphology leading to the formation of nanosheets and their aggregates at higher fluences. A tentative mechanism underlying the observed ion induced evolution of surface morphology of SnO2–ZnO nanocomposite is proposed. PL studies revealed strong enhancement in the UV emissions from the nanocomposite thin film at lower fluence, while a drastic decrease in the UV emissions along with a significant enhancement in the defect emissions has been observed at higher fluences. 相似文献
14.
We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~1020 cm−3 in average and carrier mobilities of 5 cm2/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods. 相似文献
15.
Alberto Ballesteros Ester Laguna-Gutierrez Paula Cimavilla-Roman Maria Luisa Puertas Antonio Esteban-Cubillo Julio Santaren Miguel Angel Rodriguez-Perez 《应用聚合物科学杂志》2021,138(46):51373
In the present work blends of polystyrene (PS) with sepiolites have been produced using a melt extrusion process. The dispersion degree of the sepiolites in the PS has been analyzed by dynamic shear rheology and X-ray micro-computed tomography. Sepiolites treated with quaternary ammonium salts (O-QASEP) are better dispersed in the PS matrix than natural sepiolites (N-SEP) or sepiolites organo-modified with silane groups (O-SGSEP). A percolated network is obtained when using 6.0 wt% of O-QASEP, 8.0 wt% of N-SEP and 10.0 wt% of O-SGSEP. It has been shown that multiple extrusion processes have a negative effect on the polymer architecture. They produce a reduction in the length of the polymeric chains, and they do not lead to a better dispersion of the particles in the polymer matrix. Foams have been produced using a gas dissolution foaming process, where a strong effect of the dispersion degree on the cellular structure of the different foams was found. The effects on the cellular structure obtained by using different types of sepiolites, different contents of sepiolites and different extrusion conditions have been analyzed. The foams produced with the formulations containing O-QASEP present the lowest cell size and the most homogeneous cellular structures. 相似文献
16.
Vaidhegi Kugarajah Moogambigai Sugumar Elamathi Swaminathan Nagaraj Balasubramani Sangeetha Dharmalingam 《International Journal of Hydrogen Energy》2021,46(42):22134-22148
Hydrothermally prepared zinc oxide nanorods are sulphonated (S–ZnO NR) and incorporated into 15% Sulphonated Poly (1,4-Phenylene Ether Ether Sulfone) (SPEES) to improve the hydrophilicity, water uptake and ion transfer capacity. Water uptake and ion transfer capacity increased to 34.6 ± 0.6% and 2.0 ± 0.05 meq g?1 from 29.8 ± 0.3% and 1.4 ± 0.04 meq g?1 by adding 7.5 wt% S–ZnO NR to SPEES. Morphological studies show the prepared S–ZnO NR is well dispersed in the polymer matrix. SPEES +7.5 wt% S–ZnO NR membrane exhibits optimum performance after three-weeks of continual operation in a fabricated microbial fuel cell (MFC) to produce a maximum power density of 142 ± 1.2 mW m?2 with a reduced biofilm compared to plain SPEES (59 ± 0.8 mW m?2), unsulphonated filler incorporated SPEES (SPEES + 7.5 wt% ZnO, 68 ± 1.1 mW m?2) and Nafion (130 ± 1.5 mW m?2) thereby suggesting its suitability as a sustainable and improved cation exchange membrane (CEM) for MFCs. 相似文献
17.
Anh Tuan Thanh Pham Oanh Kieu Truong Le Dung Van Hoang Truong Huu Nguyen Trang Huyen Cao Pham Phuong Thanh Ngoc Vo Thang Bach Phan Vinh Cao Tran 《Journal of the European Ceramic Society》2021,41(6):3493-3500
Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm2/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm2/Vs, low resistivity of 5.3 × 10?4 Ωcm, and good transmittance of 83.3 %. 相似文献
18.
The effects of point defects, hydrogen, and growth conditions on the electronic structure and properties of the (Al,N) codoped p-type ZnO have been investigated using the first principles method. The obtained results showed that the AlZn–NO–VZn complex is a shallow acceptor that can play an important role in achieving the p-type conductivity in the (Al,N) codoped ZnO films. Our results showed also that the electrical conductivity type in the (Al,N) codoped ZnO films strongly depends on the donor/acceptor concentrations ratio. The codoped ZnO films prepared under both Zn-rich and O-rich growth conditions with a donors/acceptors ratio of 1:2 have a p-type conductivity, while those prepared with a ratio of 1:1 cannot be p-type unless if they are prepared under O-rich conditions. The achieved p-type quality depends also on the used nitrogen doping source. To prepare p-type ZnO film of high quality using the (Al,N) codoping method, the use of NO or NO2 is recommended. The presence of donor defects such as oxygen vacancies and hydrogen will significantly affect the electronic properties of the (Al,N) codoped ZnO films, and if the concentration of these defects in the sample is high enough, the material can be easily converted to n-type. 相似文献
19.
Adem Sreedhar I. Neelakanta Reddy Qui Thanh Hoai Ta Gitae Namgung Eunbin Cho Jin-Seo Noh 《Ceramics International》2019,45(6):6985-6993
In this paper, novel morphology correlation between silver nanowires (AgNWs) and cobalt (Co)-doped ZnO (Co-ZnO) flake-like thin films (nanowire/flake-like) has been proposed for enhanced photoelectrochemical (PEC) water splitting activity. Here in, high-quality AgNWs/Co-ZnO heterostructures enabled superior visible light water splitting activity compared to the pure ZnO and AgNWs/ZnO. To address the strategic effect of AgNWs coupling and transition metal (Co-2?at%) doping into the ZnO host lattice, we have carried out the X-ray diffraction, field emission scanning microscopy, X-ray photoelectron spectroscopy, UV–Vis transmittance, water contact angle and PEC analyses. In this way, PEC water splitting activity was mainly examined by linear sweep voltammetry (I-V), amperometric I-t and photoconversion efficiency (η) studies. The experimental results provide clear evidence of morphology correlation between AgNWs and Co-ZnO flake-like structures for strong visible light absorption. Specifically, AgNWs/Co-ZnO composites exhibited significant enhancement in the photocurrent density (7.0?×?10?4 A/cm2) than AgNWs/ZnO (3.2?×?10?4 A/cm2) and pure ZnO (1.5?×?10?6 A/cm2). As a result, detailed AgNWs/Co-ZnO geometry has great potential for photoconversion efficiency (0.73%). In a word, the merits of controllable AgNWs/Co-ZnO heterostructure are proposed to improve the visible light harvesting and charge carrier generation for energy conversion devices. 相似文献
20.
In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer. 相似文献