Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

Effect of H2O2 concentration on electrochemical growth and properties of vertically oriented ZnO nanorods electrodeposited from chloride solutions

In this work, ZnO nanostructures are electrodeposited on a transparent conducting glass from chloride baths. The influence of H₂O₂ concentration on the electrochemical characteristics has been studied using cyclic voltammetry (CV) and chronoamperometry (CA) techniques. From the analysis of the current transients on the basis of the Scharifker–Hills model, it is found that nucleation mechanism is progressive with a typical three-dimensional (3D) nucleation and growth process; independently with the concentration of H₂O₂. However, the nucleation rate of the ZnO changes with the increase of H₂O₂ concentration. The Mott–Schottky measurements demonstrate an n-type semiconductor character for all samples with a carrier density varying between 5.14×10¹⁸ cm⁻³ and 1.47×10¹⁸ cm⁻³. Scanning electron microscopy (SEM) observations show arrays of vertically aligned ZnO nanorods (NRs) with good homogeneity. The X-ray diffraction (XRD) patterns show that the ZnO deposited crystallises according to a hexagonal Würtzite-type structure and with the c-axis perpendicular to the electrode surface. The directional growth along (002) crystallographic plane is very important for deposits obtained at 5 and 7 mM of H₂O₂. The high optical properties of the ZnO NRs with a low density of deep defects was checked by UV–vis transmittance analyses, the band gap energy of films varies between 3.23 and 3.31 eV with transparency around 80–90%.     

Ion beam induced evolution of surface morphology and optical properties of SnO2–ZnO nanocomposite thin films

SnO₂–ZnO nanocomposite thin films, prepared by a simple carbothermal reduction based vapor deposition method, were irradiated with 8 MeV Si³⁺ ions for engineering the morphological and optical properties. The surface morphology of the nanocomposites was studied by atomic force microscopy (AFM), while the optical properties were investigated by photoluminescence spectroscopy (PL) and Raman spectroscopy. AFM studies on the irradiated samples revealed growth of nanoparticles at lower fluence and a significant change in surface morphology leading to the formation of nanosheets and their aggregates at higher fluences. A tentative mechanism underlying the observed ion induced evolution of surface morphology of SnO₂–ZnO nanocomposite is proposed. PL studies revealed strong enhancement in the UV emissions from the nanocomposite thin film at lower fluence, while a drastic decrease in the UV emissions along with a significant enhancement in the defect emissions has been observed at higher fluences.     

Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~10²⁰ cm⁻³ in average and carrier mobilities of 5 cm²/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods.     

Influence of the dispersion of Nanoclays on the cellular structure of foams based on polystyrene

In the present work blends of polystyrene (PS) with sepiolites have been produced using a melt extrusion process. The dispersion degree of the sepiolites in the PS has been analyzed by dynamic shear rheology and X-ray micro-computed tomography. Sepiolites treated with quaternary ammonium salts (O-QASEP) are better dispersed in the PS matrix than natural sepiolites (N-SEP) or sepiolites organo-modified with silane groups (O-SGSEP). A percolated network is obtained when using 6.0 wt% of O-QASEP, 8.0 wt% of N-SEP and 10.0 wt% of O-SGSEP. It has been shown that multiple extrusion processes have a negative effect on the polymer architecture. They produce a reduction in the length of the polymeric chains, and they do not lead to a better dispersion of the particles in the polymer matrix. Foams have been produced using a gas dissolution foaming process, where a strong effect of the dispersion degree on the cellular structure of the different foams was found. The effects on the cellular structure obtained by using different types of sepiolites, different contents of sepiolites and different extrusion conditions have been analyzed. The foams produced with the formulations containing O-QASEP present the lowest cell size and the most homogeneous cellular structures.     

Investigation on sulphonated zinc oxide nanorod incorporated sulphonated poly (1,4-phenylene ether ether sulfone) nanocomposite membranes for improved performance of microbial fuel cell

Hydrothermally prepared zinc oxide nanorods are sulphonated (S–ZnO NR) and incorporated into 15% Sulphonated Poly (1,4-Phenylene Ether Ether Sulfone) (SPEES) to improve the hydrophilicity, water uptake and ion transfer capacity. Water uptake and ion transfer capacity increased to 34.6 ± 0.6% and 2.0 ± 0.05 meq g^?1 from 29.8 ± 0.3% and 1.4 ± 0.04 meq g^?1 by adding 7.5 wt% S–ZnO NR to SPEES. Morphological studies show the prepared S–ZnO NR is well dispersed in the polymer matrix. SPEES +7.5 wt% S–ZnO NR membrane exhibits optimum performance after three-weeks of continual operation in a fabricated microbial fuel cell (MFC) to produce a maximum power density of 142 ± 1.2 mW m^?2 with a reduced biofilm compared to plain SPEES (59 ± 0.8 mW m^?2), unsulphonated filler incorporated SPEES (SPEES + 7.5 wt% ZnO, 68 ± 1.1 mW m^?2) and Nafion (130 ± 1.5 mW m^?2) thereby suggesting its suitability as a sustainable and improved cation exchange membrane (CEM) for MFCs.     

Controlling thickness to tune performance of high-mobility transparent conducting films deposited from Ga-doped ZnO ceramic target

Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the films is revealed. The mobility increases quickly with increasing the thickness from 350 to 900 nm, and then tends to be saturated at further thicknesses. A higher mobility than 50 cm²/Vs can be achieved, which is an extra-high value for polycrystalline ZnO films deposited by using the sputtering technique. The thickness-dependent mobility originates from scatterings on grain boundaries and dislocation-induced defects controlled by thin-film growth. Based on the Volmer-Weber model, an expansion model is built up to describe the thickness-dependent crystal growth of the HGZO films, especially at the thick films. As a result, the 800 nm-thick HGZO film obtains the highest performance with high mobility of 51.5 cm²/Vs, low resistivity of 5.3 × 10^?4 Ωcm, and good transmittance of 83.3 %.     

The effect of growth conditions,point defects and hydrogen on the electronic structure and properties of p-type (Al,N) codoped ZnO: A first principles study

The effects of point defects, hydrogen, and growth conditions on the electronic structure and properties of the (Al,N) codoped p-type ZnO have been investigated using the first principles method. The obtained results showed that the Al_Zn–N_O–V_Zn complex is a shallow acceptor that can play an important role in achieving the p-type conductivity in the (Al,N) codoped ZnO films. Our results showed also that the electrical conductivity type in the (Al,N) codoped ZnO films strongly depends on the donor/acceptor concentrations ratio. The codoped ZnO films prepared under both Zn-rich and O-rich growth conditions with a donors/acceptors ratio of 1:2 have a p-type conductivity, while those prepared with a ratio of 1:1 cannot be p-type unless if they are prepared under O-rich conditions. The achieved p-type quality depends also on the used nitrogen doping source. To prepare p-type ZnO film of high quality using the (Al,N) codoping method, the use of NO or NO₂ is recommended. The presence of donor defects such as oxygen vacancies and hydrogen will significantly affect the electronic properties of the (Al,N) codoped ZnO films, and if the concentration of these defects in the sample is high enough, the material can be easily converted to n-type.     

Facile growth of novel morphology correlated Ag/Co-doped ZnO nanowire/flake-like composites for superior photoelectrochemical water splitting activity

In this paper, novel morphology correlation between silver nanowires (AgNWs) and cobalt (Co)-doped ZnO (Co-ZnO) flake-like thin films (nanowire/flake-like) has been proposed for enhanced photoelectrochemical (PEC) water splitting activity. Here in, high-quality AgNWs/Co-ZnO heterostructures enabled superior visible light water splitting activity compared to the pure ZnO and AgNWs/ZnO. To address the strategic effect of AgNWs coupling and transition metal (Co-2?at%) doping into the ZnO host lattice, we have carried out the X-ray diffraction, field emission scanning microscopy, X-ray photoelectron spectroscopy, UV–Vis transmittance, water contact angle and PEC analyses. In this way, PEC water splitting activity was mainly examined by linear sweep voltammetry (I-V), amperometric I-t and photoconversion efficiency (η) studies. The experimental results provide clear evidence of morphology correlation between AgNWs and Co-ZnO flake-like structures for strong visible light absorption. Specifically, AgNWs/Co-ZnO composites exhibited significant enhancement in the photocurrent density (7.0?×?10^?4 A/cm²) than AgNWs/ZnO (3.2?×?10^?4 A/cm²) and pure ZnO (1.5?×?10^?6 A/cm²). As a result, detailed AgNWs/Co-ZnO geometry has great potential for photoconversion efficiency (0.73%). In a word, the merits of controllable AgNWs/Co-ZnO heterostructure are proposed to improve the visible light harvesting and charge carrier generation for energy conversion devices.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.