环保型氧化物增强银基电接触功能复合材料研究进展

围绕研制开发具有与AgCdO性能相媲美的银基电接触材柞,报道柚近3年来传统Ag/SnO2、Ag/ZnO、Ag/CuO三种银基电接触材柞体系的研究现状,主要论述国内外研究恘者从掺杂改性、制备方法、材柞模拟仿真、第一性原理计算等方面开展的大柎优化研究;梳理柚目前制备银基电接触材柞体系的常规制备技术及其工作原理;简述柚当前部...     

Charge Transport Calculation along Two-Dimensional Metal/Semiconductor/Metal Systems

Two-dimensional transistors are promising candidates for the next generation of nanoscale devices. Like the other alternatives, they also encounter problems such as instability under standard condition (STP), low channel mobility, small band gaps, and difficulty to integrate metal contacts. The latter poses a great challenge since metal/semiconductor interface significantly affects the transistor‘s performance. Some of these obstacles can be solved by using two-dimensional transition metal di-chalcogenides (TMDC) materials. In this study, we performed charge transport calculation based on density functional theory (DFT) followed by wave dynamics to evaluate the performance of six two-dimensional TMDC metal/semiconductor/metal systems. Each semiconductor monolayer was laterally connected, at both ends to metal contacts consisting of VS₂ or FeS₂ monolayers. We found that charge transport was more efficient in systems containing a CrS₂ semiconductor monolayer compared to systems with MoS₂ or WS₂ as the semiconductor monolayer. The electronic characterization of the monolayer TMDC materials by DFT estimates well the trend in charge transport efficiency calculated using wave packet dynamics.     

Au与p-CZT晶体的接触特性及其CZT表面处理状态的影响

对不同腐蚀、钝化表面处理的CZT晶片与Au接触的I-V特性进行了研究.用XPS分析了钝化前后CZT晶体表面成分,发现钝化后CZT晶片表面形成厚度为3.1nm的TeO2氧化层.用Agilent 4339B高阻仪进行未腐蚀、腐蚀与腐蚀钝化的CZT晶片I-V特性测试,结果表明腐蚀和腐蚀钝化均能不同程度提高Au/p-CZT接触的势垒高度,相应地减小了漏电流.     

小容量电器微小触头的磁力去毛刺技术

小容量电器微小触头的磁力去毛刺工艺是在磁场的作用下、利用磁性磨料形成的的柔性磁刷,对触头相应表面产生一定的碰撞、滚压、滑擦、刻划,实现触头表面的抛光和去毛刺。采用ANSYS对磁路进行了分析和设计,对磨粒与工件进行了受力及运动分析,建立了磁力研磨试验平台,进行了相应的工艺性实验。试验结果表明,磁力研磨技术对触点的抛光作用明显,并能有效去除触头毛刺。     

机械合金化制备Ni-W(B)非晶-纳米晶的粉末特性

利用机械合金化(MA)制备了Ni-20.7W和Ni-17.9W-27B(at%)非晶-纳米晶粉末,分别采用扫描电镜(SEM)和X射线衍射(XRD)仪分析了不同球磨时间粉末的微观形貌和结构参数,探讨了B的添加对非晶化过程的影响。研究结果表明:MA过程中,Ni-20.7W样品没有明显发生非晶化,而Ni-17.9W-27B样品在40 h时发生了非晶化,说明B提高了Ni-W合金体系的非晶化形成能力;非晶化过程为W/B首先固溶于Ni中生成Ni(W,B)过饱和固溶体,然后转变为非晶;Ni-20.7W样品球磨30 h后Ni的晶粒尺寸为32.9 nm,晶格畸变为0.48%,而Ni-17.9W-27B样品球磨10 h后的晶粒尺寸为9 nm,晶格畸变为0.62%。     

钨硅化物砷化镓Schottky接触的形成和特性

本文报道了钨硅化物-砷化镓Schottky接触的形成过程和电学特性.实验表明,WSi_x/GaAs Schottky接触具有优越的I-V特性,势垒高度保持在0.8V,理想性因子实际上保持在1,并具有高温稳定性.研究表明,除了硅化物的成份,表面处理工艺和硅化物淀积技术也将对Schottky接触的I-V特性和热稳定性产生强烈的影响.本文提出利用对GaAs衬底的溅射腐蚀和在淀积过程中加以负的衬底偏置能显著地改进金属层与衬底的粘附性.     

Thermal reliability and performances of InGaP schottky contact with Cu/Au and Au/Cu-MSM photodetectors

We report the Schottky performance and thermal reliability of a wide bandgap InGaP layer in contact with a Cu/Au metallic system. An effective Schottky barrier height of 0.97 eV and an ideality factor of 1.21 can be achieved. The thermal reliability of the resultant Schottky barrier diodes was analyzed using Auger electron spectroscopy and atomic force microscopy. The thermal reliability could be main tained up to 450°C. The failure mechanism was attributable to the decomposition of the InGaP layer and the interdiffusion of the chemical elements at higher temperature. Insensitive photoresponsivity with the in cident optical power was found for the resultant Au/Cu-metal-semiconductor-metalphotodetectors (MSM-PDs). According to the measured temporal response of the Au/Cu-MSM-PDs, the operation frequency could be above 10 GHz.     

金属/氮化物肖特基势垒和欧姆接触研究进展

金属 /氮化物肖特基势垒和欧姆接触是蓝紫光光学器件及高温大功率电子器件中的关键工艺。氮化物半导体是一种极性材料 ,表面态密度较低 ,费米能级钉扎效应较弱 ,表面处理能显著影响接触特性。样品表面的沾污和氧化层也会使接触特性显著退化。宽禁带材料的杂质离化能高 ,重掺杂比较困难。深能级陷阱对载流子的俘获效应很强。这些因素都增加了接触的制作难度 ,促使人们寻求新的方案来改进接触特性。文中从金属 /半导体接触的物理模型出发来综述肖特基势垒和欧姆接触的研究进展 ,希望能给器件研究者提供新的思路。     

基于再生长欧姆接触工艺的220 GHz InAlN/GaN 场效应晶体管

本文在蓝宝石衬底上研制了具有高电流增益截止频率(f_T)的InAlN/GaN异质结场效应晶体管 (HFETs)。基于MOCVD外延n -GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(L_sd)缩小至600 nm。此外,采用自对准工艺制备了50 nm直栅。由于器件尺寸的缩小,V_gs= 1 V下器件最大饱和电流(I_ds)达到2.11 A/mm,峰值跨导达到609 mS/mm。小信号测试表明,器件f_T达到220 GHz、最大振荡频率(f_max)达到48 GHz。据我们所知,该f_T值是目前国内InAlN/GaN HFETs器件报道的最高结果。     

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13)

Metal-semiconductor-metal (MSM) photodetectors have been fabricated on In_xGa_1−xN epitaxial films grown by metalorganic chemical vapor deposition within the composition range 0≤x≤0.13. The dark current and spectral response were measured for devices with a varying In mole fraction x. The devices, which had nominal finger widths and finger spacing of 5 μm, were biased with modest voltages in the range 2≤V_bias≤5 V. In general, turn-on wave-length and dark current increased with increasing x. Turn-on wavelengths ranged from λ=370 nm to 430 nm and dark current densities ranged from I_dark=2×10⁻² A/cm² (V_bias=5 V, x≈0.05) to 9×10⁴ A/cm² (V_bias=2 V, x≈0.13) depending on the In content, x, of the device active area.