Electrical characterization of controlled and unintentional modified metal–organic contacts

A method to characterize metal–organic contacts subjected to controlled technological treatments or unintentional degradation processes is proposed. The procedure is useful to characterize different fundamental aspects of a metal–organic structure such as the height of the interface energy barrier, the presence of impurities or trapping effects and the carrier mobility. Current–voltage curves in organic diodes are analyzed and the value of the free carrier density at the metal–organic interface is extracted and discussed. The charge carrier density is chosen for this analysis as this is one of the key physical parameters in the understanding of the physical processes involved in the device operation. The extracted charge, when described as a function of the current density, gives information about the doping and impurity concentration, the effective barrier seen by the carriers at the metal–organic interface or effective barriers seen by the carriers in the hopping processes across the organic material. An important advantage of the proposed procedure is the low computational time. Also, the procedure aims to provide a quick analysis for researchers on how the physical properties of the devices are evolving when they are technologically altered or degraded.     

硫铵滚筒干燥器自动测控系统的应用研究

简述了硫铵滚筒干燥器的干燥原理及工艺流程,提出自动测控系统的控制要求及实现方案配置,给出了硫铵含水量控制调节、干燥器出口微负压控制调节、水溶雾沫除尘器等几个关键环节的测控原理及控制过程。     

Ohmic contacts to n-type GaN

Ohmic contacts to n-GaN using Ag, Au, TiN, Au/Ti, Au/Mo/Ti, and Au/Si/Ti have been studied. The Fermi level of GaN appears to be unpinned, and metals and compounds with work functions less than the electron affinity resulted in ohmic contacts. Reactively sputter deposited TiN was ohmic as deposited. However, Au/Ti, Au/Mo/Ti, and Au/Si/Ti required heat treatments to form ohmic contacts, with the best being an RTA at 900°C. Ag and Au were shown to diffuse across the GaN surface at T>500°C; therefore, they are unstable, poor ohmic contact metallizations as single metals. The other contact schemes were thermally stable up to 500°C for times of 30 min.     

Current-voltage characteristics and X- ray diffraction study of Pd/Si1- xGex schottky contacts

The electrical characteristics of Pd/p-Si_1-xGe_x Schottky contacts have been investigated. The Schottky contacts were formed by depositing Pd metal on substrates at room temperature (RT = 300K) and at low temperature (LT = 77K). Post annealing was performed in nitrogen atmosphere at 450 and 550°C, respectively, to study the effect of silicide formation on contact characteristics. The current-voltage measurements showed that the barrier height, ϕ_B, decreased with the increase of the gemanium composition. The contact postannealed at 550°C showed a current transport mechanism obviously different from the as-deposited Schottky contacts. Nearly identical characteristics were observed for the low temperature deposited contacts and the room temperature deposited contacts with 550°C post-annealing. They both showed thermionic emission dominated transport mechanism. X-ray diffraction technique was used to characterize the effect of different temperature treatments on the crystal structure. The full width at half maximum of Si_1-xGe_x(400) phase decreased at low temperature deposited sample, while it increased at room temperature deposition.     

连铸连轧的金属学特点及其生产应用途径

阐述了连铸连轧的基本方式及其金属学特点。分析了连铸连轧与普通热轧工艺在产品组织和力学性能方面产生差异的原因。根据对不同钢种要求的力学性能，指出了连铸连 生产应用途径。     

黑龙江省移动基站动力及环境集中监控系统

介绍了黑龙江省移动基站集中监控系统网络结构、系统功能、监控对象及供电方式，并探讨了黑龙江省移动基站动力及环境集中监控系统的传输方案。     

The use of notch and short crack approaches to fretting fatigue threshold prediction: Theory and experimental validation

In this paper the similarities between fretted and notched components in terms of stress gradient and the consequent “size effect” are discussed. Critical distance and short crack arrest approaches for the prediction of fretting fatigue thresholds are then presented and the predictions are compared with experimental results. Two geometry and alloy combinations are considered in order to validate the prediction by the means of experimental results. In particular, both Hertzian fretting tests performed on Al4%Cu alloys and experiments carried out employing ‘flat and rounded’ contact pads, made of Ti6Al4V alloy, are used for the comparison. It is shown that both criteria provide good predictive capabilities. However, the short crack arrest method is less empirical and can be adapted to a wider range of applications (e.g. surface treated components).     

Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time. The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115 nm) contacts to n-type GaN became ohmic after annealing for 3 min at 500°C or for 15 s at 600°C. A minimum contact resistivity of 5×10⁻⁶Ω cm² was measured after contacts were repatterned with an Al layer to reduce the effect of a high metal sheet resistance. Ti/Al and Ta/Al contacts encapsulated under vacuum in quartz tubes showed a significant increase in contact resistivity after aging for five days at 600°C. Cross section transmission electron microscopy micrographs and electrical measurements of aged samples indicate that the increased contact resistivity is primarily the result of degradation of the metal layers. Minimal reactions at the metal/GaN interface of aged samples were observed.     

经济型抗CO2腐蚀油套管用低合金钢的研究

在油套管CO2腐蚀失效分析基础上,研究了不同成分和组织钢在模拟不同油田采出液介质中的抗CO2腐蚀性能和腐蚀行为.针对油田特定的腐蚀环境,优选出抗CO2、Cl-腐蚀性能良好的经济型低合金钢种.