一种大型电器触头电阻钎焊工艺试验

介绍了THW2-4000低压万能式断路器静触头的电阻钎焊工艺试验过程。并简单说明了温度、压力、焊接面粗糙度、钎料厚度等工艺参数对焊件钎着率及钎焊质量的影响。     

Improved Ni Schottky Contacts on <Emphasis Type="Italic">n</Emphasis>-Type 4H-SiC Using Thermal Processing

High-temperature processing was used to improve the barrier properties of three sets of n-type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum average barrier height of 1.78 eV and an ideality factor of 1.09 using current–voltage measurements on diodes annealed in vacuum at 500°C for 24 h. Nonannealed contacts had an average barrier height of 1.48 eV and an ideality factor of 1.85. The Rutherford backscattering spectra of the Ni/SiC contacts revealed the formation of a nickel silicide at the interface, accompanied by a substantial reduction in oxygen following annealing.     

A Novel Stress Characterization Technique for the Development of Low-Stress Ohmic Contacts to HgCdTe

HgCdTe material intended for long-wavelength infrared detection is particularly susceptible to damage from stress. As a result, an ideal ohmic contact needs to have good adhesion and low specific contact resistance. The contact should act as a diffusion barrier and induce the least amount of stress in the underlying material. In this paper we present a set of stress measurements from different ohmic contact materials deposited on short- and long-wavelength HgCdTe films grown by liquid-phase epitaxy (LPE). Using a new experimental technique we remove the substrate and measure the stress induced on single- and multilayered HgCdTe cantilevers. To interpret our results, we develop a theoretical model that describes the physics of elastic deformation in HgCdTe layers. Our model is based on classical thin-plate bending theory and explicitly takes into account the realistic boundary conditions that are present in the experimental setup by using a variational approach.     

The Bipolar Field-Effect Transistor:Ⅶ.The Unipolar Current Mode for Analog-RF Operation(Two-MOS-Gates on Pure-Base)

This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor(BiFET) under the unipolar(electron) current mode of operation,with bipolar(elec-tron and hole) charge distributions considered.The model BiFET example presented has two MOS-gates on the two surfaces of a thin pure silicon base layer with electron and hole contacts on both edges of the thin base.The hole contacts on both edges of the thin pure base layer are grounded to give zer...     

The Bipolar Field-Effect Transistor: ⅩⅢ. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These ex-amples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impure-thin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concen-tration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.     

含氮奥氏体钢与马氏体钢的抗弹行为研究

对不同状态含氮奥氏体钢板和马氏体钢板进行了抗枪弹与抗杆式模拟弹试验,分析了它们的穿甲机理。含氮奥氏体钢具有优良的抗弹性能,并优于传统马氏体钢的抗弹性能。马氏体钢抗杆式模拟弹防护系数随着强度的提高而提高,呈线性关系,含氮奥氏体钢穿甲防护系数远远高于同一强度级别的马氏体钢。研究表明,含氮奥氏体钢的抗弹性能的提高主要通过冲击硬化,动态强度明显提高,以及通过塑性变形区域增加,使弹丸更多的能量转换成塑性变形能。     

6H-SiC Schottky二极管的正向特性

提出了一种考虑Schottky结势垒不均匀性和界面层作用的Si C Schottky二极管( SBD)正向特性模型,势垒的不均匀性来自于Si C外延层上的各种缺陷,而界面层上的压降会使正向Schottky结的有效势垒增高.该模型能够对不同温度下Si C Schottky结正向特性很好地进行模拟,模拟结果和测量数据相符.它更适用于考虑器件温度变化的场合,从机理上说明了理想因子、有效势垒和温度的关系.     

石油钻机专用新型CZ28-1250Q/10直流电磁接触器系统设计与计算

介绍了石油钻机专用新型CZ28-1250Q/10直流电磁接触器的总体结构和特点,重点研究讨论了新型CZ28-1250Q/10直流电磁接触器电磁系统的设计和关键技术参数的计算.     

Inkjet printed metallizations for Cu(In1−x Ga x )Se2 photovoltaic cells

This study reports the inkjet printing of Ag front contacts on Aluminum doped Zinc Oxide (AZO)/intrinsic Zinc Oxide (i‐ZnO)/CdS/Cu(In_1−xGa_x)Se₂ (CIGS)/Mo thin film photovoltaic cells. The printed Ag contacts are being developed to replace the currently employed evaporated Ni/Al bi‐layer contacts. Inkjet deposition conditions were optimized to reduce line resistivity and reduce contact resistance to the Al:ZnO layer. Ag lines printed at a substrate temperature of 200°C showed a line resistivity of 2.06 µΩ · cm and a contact resistance to Al:ZnO of 8.2 ± 0.2 mΩ · cm² compared to 6.93 ± 0.3 mΩ · cm² for thermally evaporated contacts. These deposition conditions were used to deposit front contacts onto high quality CIGS thin film photovoltaic cells. The heating required to print the Ag contacts caused the performance to degrade compared to similar devices with evaporated Ni/Al contacts that were not heated. Devices with inkjet printed contacts showed 11.4% conversion efficiency compared to 14.8% with evaporated contacts. Strategies to minimize heating, which is detrimental for efficiency, during inkjet printing are proposed. Copyright © 2011 John Wiley & Sons, Ltd.     

Effects of post-lift-off annealing conditions on contact oxidation of Ti–Au top-contacts in In-Sn–Zn–O TFT

Thin film transistors (TFT) with an indium based mixed oxide semiconductor are investigated for titanium–gold top-contacts. It is noticed that upon post annealing, in order to remove chemical residuals from top-contact lift-off steps, oxidation of titanium occurs depending on the annealing conditions. Mobility of the TFT is strongly affected by contact oxidation arising from this post lift-off annealing process. Oxidation of the top-contact is facilitated by adsorbed surface oxygen or out-diffusing oxygen from the semiconductor depending on the post lift-off annealing conditions. A passivation layer that binds effectively to surface vacancies and removes adsorbed oxygen species from the semiconductor surface is demonstrated. The combinations of this passivation layer with relatively low temperature and short post lift-off annealing in an oxygen deficient environment result in significantly reduced contact oxidation and subsequently better transistor performance. Contact resistance as low as 90 Ω cm and mobility as high as 5.3 cm²/V s are obtained for solution processed mixed metal oxide semiconductor in top-contact geometry.