Optically absorbing metallization

An electrode metallization is demonstrated that absorbs nearly all light incident upon it at specified wavelengths. This electrode may see application in reflective displays and spatial light modulators where stray light reflected off circuit metallization is deleterious. Reflection suppression of −35 dB is shown in a highly conductive metallization.     

双层减反射膜镀制半导体光放大器

首次采用ZnSe和MgF2双层减反射膜镀制半导体光放大器，分别测出了两端面的剩余反射比曲线。结果表明，该放大器两端面反射比乘积最小值低于1×10－6，按照O’Mahoney给出的判据，其可用行波单程增益为22dB。     

钼酸铅晶体表面红外增透膜的研究

本文讨论了用于钼酸铅晶体表面的宽带红外增透膜的设计以及其在真空环境中的制备。膜系设计中 ,运用反射率图解法以获得满意的光学性能 ;与传统的热蒸发镀膜工艺相比 ,在真空沉积过程中采用了离子辅助沉积技术 ,从而大大提高了膜层的光学特性及膜层品质。试验表明所镀膜层性能优异 ,在光纤通信领域具有广阔的应用前景     

射频溅射法镀LD腔面光学薄膜的工艺研究

介绍了用普通多靶射频溅射台镀半导体激光器腔面光学膜的工艺方法,给出了实验的工艺条件、采用的光学膜的材料以及具体的工艺参数,讨论了此方法镀光学膜的结果以及优点。     

界面粗糙度对真空紫外光学薄膜光谱性能影响研究

设计了193 nm窄角度和宽角度入射增透膜以及正入射高反膜,其中增透膜s和p偏振光透射率的最大偏差分别为0.17%和0.44%。结合标量散射理论和等效吸收层近似理论,多层膜间的粗糙界面等效为薄的吸收层,基于薄膜本征传输矩阵计算分析了不同界面粗糙度下的光谱性能。研究发现,薄膜光谱性能随着界面均方根粗糙度的增加而急剧退化,高反膜反射带宽也随之降低,达到4 nm时,宽角度入射增透膜和高反膜光谱性能在193 nm处分别退化2.04%和2.09%。界面粗糙度是影响高光谱性能真空紫外光学薄膜制备的重要因素。     

面向高效单结GaInP太阳电池的介质复合纳米结构的仿真研究

以实现宽谱减反介质复合纳米结构表面的高 效单结GaInP太阳电池为目标,利用严格耦合波分析理论, 仿真研究了该电池表面的介质复合纳米结构对太阳电池宽谱减反、归一化吸收、最大化理想 效率的影响。该介质复 合纳米结构从上往下依次为SiO₂纳米锥、SiO₂介质层和SiNx介质层,通过对SiO₂纳米锥占空比、深宽比以及对SiO₂和SiNx介质层厚度等参数的系列仿真最终优化出适用于单结Ga InP电池的表面结构。结果表明:当SiO₂纳米锥底部 直径D=550nm、高度H=650 nm、SiN x介质层厚度为60 nm时电池具有最高的 最大化理想转换效率为28.58%。上述结果为后期实验以及该类电池 实现规模化生产奠定了基础。     

Optimized optical design of thin-film transistor arrays for high transmittance and excellent chromaticity

Transmittance and chromaticity are essential requirements for optical performance of thin-film transistor (TFT) arrays. However, it is still a challenge to get high transmittance and excellent chromaticity at the same time. In this paper, optimized optical design by using antireflection film theory and optical phase modulation is demonstrated in low temperature poly-silicon (LTPS) TFT arrays. To realize high transmittance, the refractive index difference of adjacent films is modified by using silicon oxynitride (SiO_xN_y) with adjustable refractive index. To realize excellent chromaticity, the thicknesses of multilayer films are precisely regulated for antireflection of certain wavelength light. The results show that the transmittance and chromaticity have been improved by about 6% and 18‰, respectively, at the same time, which is a big step forward for high optical performance of TFT arrays. The device characteristics of the TFT arrays with the optimal design, such as threshold voltage and electron mobility, are comparable to those of conventional TFT arrays. The optimized optical design results in enhanced power-conversion efficiencies and perfects the multilayer film design on the basic theory, which has great practicability to be applied in TFT arrays.     

玻璃衬底沉积氮化硅薄膜性能研究

为了改善玻璃衬底上制备的薄膜太阳电池的转换效率,采用高纯氮气作为等离子体气源,以质量分数为5%的SiH_4(Ar稀释)作为前驱气源,利用电子回旋共振-等离子体增强化学气相沉积技术在玻璃衬底上低温制备了氮化硅薄膜;利用各种测试设备分析了薄膜的成分、光学性能和表面形貌.结果表明:实验制备的非晶薄膜含氢量较低;薄膜的折射率随着衬底温度和微波功率的增加而增加.在衬底温度为350℃、微波功率为650 W时,薄膜的折射率在2.0左右,平均粗糙度为1.45 nm,还说明薄膜具有良好的光学性能和较高的表面质量.在此条件下,薄膜的沉积速率达到10.7 nm/min,表明本实验能在较高的沉积速率下制备均匀、平整、优质的SiN薄膜.     

Solar cells based on DLC film – Si structures for space application

Significant increase in solar cell (SC) efficiency after the deposition of thin antireflection diamond-like carbon (DLC) films has been observed. Thick (1300–1500 nm) DLC films deposited on a working side of the SC allow us to increase their stability relating to the effect of proton and ultraviolet (UV) irradiation. So, one-stage (E=50 keV) or multi-energy (50+100 keV) implantation of proton into protected SC (the SC+DLC films system) did not practically influence the SC parameters. Moreover, SC covered by DLC film after UV irradiation show improvement of efficiency both for implanted and unimplanted samples. At the same time the unprotected SC deteriorated after those treatments.The effects observed are connected with the decrease in reflection losses due to the deposition of DLC films and self-annealing of radiation damages in implanted DLC films due to light-induced hydrogen bonding. Re-emission by DLC film of the absorbed ultraviolet light in visible spectral range was observed and mechanism of the effect was proposed. Application of nitrogen-doped DLC film as a fluorescent layer allows us to improve Si SC efficiency in UV spectral range. The results obtained have opened up a wide variety of potential applications of DLC films, especially for space solar cells.