二戊基二硫代氨基甲酸锑的抗磨机理

为了进一步弄清润滑油添加剂二戊基二硫代氨基甲酸锑(SbDTC)在金属表面的摩擦化学行为,在实验室合成了SbDTC,利用四球试验机研究了其极压和抗磨性能,采用X射线光电子能谱仪(XPS)、扫描电镜(SEM)对边界润滑状态下形成的磨斑及磨斑表面典型元素的组成、化学状态和含量进行了分析.结果表明,SbDTC具有较好的抗磨性能和承载能力,其主要原因可能是其在摩擦过程中与金属表面作用,生成了由Sb_2O_3,FeS,Fe_2O_3和含氮有机物组成的边界润滑膜,起到了缓冲载荷和抑制磨损的作用.     

无铅压电陶瓷材料的研究现状

本文综述了近年来国内外无铅压电陶瓷材料方面的研究进展,重点介绍了钛酸钡基、铋层状结构、钛酸铋钠基、碱金属铌酸盐系以及钨青铜结构无铅压电陶瓷体系的研究现状,并对无铅压电陶瓷的发展作了展望。     

铋对铅酸蓄电池性能影响的研究

研究了铅酸蓄电池板栅合金中的铋对恒流腐蚀的影响,电解液中的铋对H2和O2析出的作用以及正极活性物质中的Bi2O3的作用。     

溶胶—凝胶法制备掺镧钛酸铋铁电薄膜

利用溶胶-凝胶法在Si（100）及Pt/Ti/Si（100）衬底上制备了Bi3.5La0.5Ti3O12(BLT-5）铁电薄膜,研究了在不同退火条件下BLT-5薄膜的结晶性能。经650℃、30min退火处理的BLT-5铁电薄膜的矫顽场Et=67kV/cm,剩余极化强度Pt=11.2μC/cm∧2,BLT-5铁电薄膜呈现较好的抗疲劳特性,可望用于制备高容量铁电随机存取存储器。     

Factors Affecting the Stability of CdTe/CdS Solar Cells Deduced from Stress Tests at Elevated Temperature

CdTe/CdS solar cells were subjected to heat stress at 200 °C in the dark under different environments (in N₂ and in air), and under illumination (in N₂). We postulate that two independent mechanisms can explain degradation phenomena in these cells: i) Excessive Cu doping of CdS: Accumulation of Cu in the CdS with stress, in the presence of Cl, will increase the photoconductivity of CdS. With limited amounts of Cu in CdS, this does NOT affect the photovoltaic behavior, but explains the crossover of light/dark current–voltage (J–V) curves. Overdoping of CdS with Cu can be detrimental to cell performance by creating deep acceptor states, acting as recombination centers, and compensating donor states. Under illumination, the barrier to Cu cations at the cell junction is reduced, and, therefore, Cu accumulation in the CdS is enhanced. Recovery of light‐stress induced degradation in CdTe/CdS cells in the dark is explained by dissociation of the acceptor defects. ii) Back contact barrier: Oxidation of the CdTe back surface in O₂/H₂O‐containing environment to form an insulating oxide results in a back‐contact barrier. This barrier is expressed by a rollover in the J–V curve. Humidity is an important factor in air‐induced degradation, as it accelerates the oxide formation. Heat treatment in the dark in inert atmosphere can stabilize the cells against certain causes of degradation, by completing the back contact anneal.     

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed for several midwave infrared and long-wave infrared (MWIR x = 0.295, LWIR x = 0.233) Hg_1−x Cd _x Te (MCT) diodes. The energy varied from diode to diode. At high reverse biases, the energy tends toward the band gap energy. Close to zero bias, the energy ranged from 0.06 to 0.1 eV. Deep level transient spectroscopy (DLTS) showed a broad peak centered at 55–80 K for the MWIR MCT. Comparison of the DLTS spectrum to a simulation based on the energy and capture cross section from a rate window analysis shows that the peak is a band of traps. The capacitance transient amplitude increased as the filling pulse increased from 1 μs to 0.1 s, consistent with capture at a dislocation. A shift to lower temperatures for the peak was also observed when the diodes are cooled under forward bias. The shift is reversible, indicating that the traps consist at least partially of a bistable defect.     

Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.5)Sr_(0.5)TiO_3复合薄膜介电性能的频率特性研究

采用射频磁控溅射法在蓝宝石基片上制备了Bi1.5Zn1.0Nb1.5O7(BZN)/Ba0.5Sr0.5TiO3(BST)双层复合薄膜,并研究了该薄膜在100 kHz~6 GHz频率范围内的介电性能。研究结果表明,BZN/BST复合薄膜的介电性能具有良好的频率稳定性。该复合薄膜的介电常数在研究的频率范围内基本与频率无关;其介电损耗在频率低于1 GHz时与频率无关,在频率高于1 GHz时随频率的上升而略微增大;薄膜在研究的频率范围内具有稳定的介电调谐率。     

锑掺杂对Mn-Ce/TiO2催化剂脱硝性能的影响

采用浸渍法制备了一系列Sb掺杂的Mn-Ce-Sb/TiO2催化剂,考察了Sb/TiO2摩尔比对催化剂脱硝性能的影响,采用X射线衍射、N2吸附-脱附、NH3程序升温脱附、H2程序升温还原等表征手段对Mn-Ce/TiO2和Mn-Ce-Sb/TiO2(Sb/TiO2摩尔比2:10)催化剂进行表征,并对两种催化剂的脱硝性能、抗...     

高光谱红外探测器组件的研究进展

描述了国外高光谱红外焦平面探测器组件的发展状况和工程应用情况,并介绍了国内高光谱红外焦平面探测器组件的研究进展。通过分析高光谱红外焦平面探测器的性能特点,提出了高光谱红外焦平面探测器的研究重点。     

分子束外延碲镉汞探测器的变结面积I-V测试研究

碲镉汞红外探测器的表面钝化处理对器件暗电流有较大影响,决定了器件的探测性能。为了研究表面钝化层不同生长方式对暗电流的抑制效果,使用分子束外延(Molecular Beam Epitaxy, MBE)系统在Si基衬底上生长碲镉汞材料,分别通过磁控溅射和原位钝化方法生长CdTe/ZnS钝化膜层。采用半导体工艺在碲镉汞材料上制备了变面积光伏探测器。通过测试不同钝化膜层器件的暗电流,分析零偏电阻和面积乘积(R₀A)与周长面积之比(p/A)的关系。结果表明,磁控溅射生长钝化层的Si基碲镉汞器件存在较大的隧穿电流,而原位钝化生长钝化层的Si基碲镉汞器件能更有效地抑制表面漏电流。拟合器件R₀A因子随PN结面积的变化,得出原位生长钝化层的器件具有更好的钝化效果。变面积器件的制备和测试能够有效且直观地反映器件性能。