氮化硅/石墨激光合金化涂层的组织结构与性能研究

为获得金属表面特别是高副接触金属表面含自润滑特性且具有高硬度耐磨特性的功能材料 ,研究了 45 # 钢表面激光合金化氮化硅 /石墨复合涂层的工艺方法、组织特征、界面形态及其形成机制 ,利用光学显微镜、扫描电镜和X射线能谱对所形成合金化层的元素分布和含量进行了分析 ,并对试样硬度进行了测定。结果表明 ,合金化层中元素Fe ,Co ,Si,C分布均匀 ;C含量达到了 15 6 9%,大部分以石墨的形式存在 ,具有一定的自润滑性能 ;但在形成合金化层的温度条件下 ,氮化硅分解严重 ;合金化层硬度提高的主要原因是Si Fe ,Co Fe固溶体的强化作用及高碳马氏体的生成和高硬度碳化物的存在。     

CNTs/Polyester复合材料的微波吸收特性研究

研究了添加不同质量分数CNTs的聚酯基复合材料的电磁波吸收性能,初步分析了CNTs的螺旋结构和手征性质导致8～40GHz波段良好的吸收。其中厚度为1.40mm±0.05mm的CNTs/Polyester复合材料在25GHz有较强的吸收峰。     

Processing of Yttria-Alumina Coated Silicon Nitride Slips by Slip Casting

Si₃N₄powders coated with 6 wt% Y₂O₃and 4 wt% Al₂O₃were prepared by coprecipitation. The resulting powders were dispersed in water at different pH values and with addition of various amounts of ammonium polyacrylate (NH₄PA) to produce 32 vol% slips. The influence of the amount of NH₄PA solution added and pH on the rheological properties of 32 vol% coated Si₃N₄slips were studied. In addition, the sintered density of cast samples was determined and related to the degree of slip dispersion. The adsorption of the NH₄PA on the coated particle surface was rather high and the surface became saturated near 0.86 mg/m²at pH 9.2. High NH₄PA concentrations (1.7–3 wt%) were necessary to obtain well dispersed 32 vol% coated Si₃N₄slips at pH 9.2. The best stabilization was obtained with the addition of 2.3 wt% NH₄PA; in this condition, the viscosity reached a minimum value of 35 mPa.s at 100 s^–1. The slip viscosity increased with increasing pH from 9.2 to 10.2. Slips with low viscosities gave a more dense packing of cast samples and consequently higher sintered density values.     

Transmittance and cathodoluminescence of AlN ceramics sintered with Ca3Al2O6 as sintering additive

Aluminum nitride ceramics were prepared by sintering with 0–4.8 mass% of Ca₃Al₂O₆ (C₃A) as a sintering additive. The transmittance in the range of 260–550 nm increased with increasing amount of C₃A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C₃A. From the results, the increase of the transmittance in the range of 260–550 nm was considered to be related to the decrease of the oxygen-induced defect density.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

纳米碳管的电子衍射及其螺旋度测量

本文对电弧放电和催化剂热解碳氢气法制备的多层直形纳米碳管的倒空间及其螺旋度，采用电子衍射进行了研究。结果表明：尽管制备方法不同，两类多层管的结构相似，皆由螺旋和非螺旋的单层石墨管组成；对其倒空间的分析以及系列倾转电子衍射实验证明，衍射图中测得的表观螺旋度值随和射条件而改变，只有在垂直入射条件下该值才代表碳管的真实螺旋度；     

以YAG为添加剂的气压烧结氮化硅

本文以添加ＹＡＧ的反应烧结氮化硅（ＲＢＳＮ）为前驱体，采用气氛加压烧结的工艺，在０．５～９．０ＭＰａ氮气压力范围，研究了不同氮压对烧结体的密度、相组成、强度和显微结构的影响及其相互间的关系。研究表明，通过改变氮气压力能有效地调控材料的显微结构，材料的性能又受控于显微结构的变化。     

反应离化团束（RICB）法生长CN硬质薄膜

用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ－Ｎ薄膜，透射电子衍射（ＴＥＭ）分析表明薄膜中含有β－Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明存在Ｃ，Ｎ原子的化学键合。     

高性能各向异性Sm2Fe17Nx磁粉的制备

本文研究了高性能各向异性Ｓｍ２Ｆｅ１７Ｎｘ磁粉的制备工艺路线与工艺参数。优化了制备与工艺参数。已制备出磁性能达到：Ｂｒ＝１．３９Ｔ，Ｈｃｉ＝８５０ＫＡ／ｍ和（ＢＨ）ｍ＝２３６ＫＪ／ｍ＾３的各向异性Ｓｍ２Ｆｅ１７Ｎ２．８８磁粉，该磁粉的各向异性场ＨＡ达到２０Ｔ。