碳/碳复合材料CVI工艺中热解碳形成机理的研究

对碳碳复合材料CVI或（CVD）工艺中热碳组织的类型，沉积机理等研究情况进行了简要的综述，并对其进一步研究提出了相应观点。     

化学镀非晶态Ni—B合金的研究

本文通过化学镀方法在铜和钢上沉积非晶态Ni-B合金。着重讨论了还原剂浓度、络合剂浓度对化学镀沉积速率的影响;分析了它的耐蚀原因和其显微硬度随退火温度的变化情况并就其应用和发展略作说明。     

宝浪油田侏罗系三工河组浅水辫状河三角洲沉积模式研究

焉耆盆地侏罗系三工河组广泛发育由辫状河进积到湖泊中形成的辫状河三角洲。这种三角洲特征显著不同于其它三角洲,其主体是辫状分流河道和水下分流河道。宝浪油田含油层段主体为辫状分流河道,以心滩发育为主要特征,是典型的浅水缓坡粗粒辫状河三角洲沉积。     

生长温度对等离子体增强化学气相沉积生长ZnO薄膜质量的影响

以Zn(C2 H5) 2 和CO2 为反应源 ,在低温下用等离子体增强化学气相沉积方法 ,在Si衬底上外延生长了高质量的ZnO薄膜。用X射线衍射谱和光致发光谱研究了衬底温度对ZnO薄膜质量的影响。X射线衍射结果表明 ,在生长温度为2 3 0℃时制备出了高质量 ( 0 0 0 2 )择优取向的ZnO薄膜 ,其半高宽为 0 2 6°。光致发光谱显示出强的紫外自由激子发射与微弱的与氧空位相关的深缺陷发光 ,表明获得了接近化学配比的ZnO薄膜     

Modification of platinum surfaces by spontaneous deposition: Methanol oxidation electrocatalysis

The presence of a second metal on platinum surfaces affects the performance of methanol oxidation. However, most of the electrocatalytic reactions are studied by using electrochemically deposited platinum alloys, but in the case of spontaneous deposition the situation is not so clear since the surface distribution, stability and morphology are usually not well documented. The formation of surface decorated samples on mono- and poly-crystalline platinum is followed by electrochemical and spectroscopic techniques and analysis of their performance towards methanol adsorption and oxidation compared with that on pure platinum. Pt/Sn and Pt/Ru are of special interest because of their well-known performance in methanol fuel cells. Methanol oxidation on Pt(111)/Ru, Pt(111)/Sn and Pt(111) shows that ruthenium is the only one able to promote the reaction since the simultaneous dissolution of tin occurs and competes with the process of interest. The in situ infrared spectroscopy is used to compare methanol oxidation on Pt(111)/Ru and Pt(111) in acid media using p-polarized light. The formation of bridge bound carbon monoxide is inhibited in the presence of ruthenium ad-species, whereas on Pt(111) the three adsorption configurations are observed. Linear sweep polarization curves and Tafel slopes (calculated from steady state potentiostatic plots) for methanol oxidation are compared on polycrystalline surfaces modified by tin or ruthenium at different coverages. There is almost no change in the Tafel slopes due to the presence of the foreign metal except for Pt/Ru, where a 0.09 V decade⁻¹ slope was calculated below 0.55 V due to hydroxyl adsorbates on ruthenium islands. The anodic stripping of methanol residues on the three surfaces indicates a lower amount of carbon monoxide-type adsorbates on Pt/Ru, and the simultaneous tin dissolution process leading to residues oxidation on Pt/Sn electrodes.     

Formation and electronic structure of interface

In the present work the formation of the interface between polycrystalline silver and thin films of titanium oxide was studied with photoelectron spectroscopy (XPS, UPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). Titanium oxide was deposited stepwise on 100 nm thick silver films by reactive magnetron sputtering allowing to study the evolution of the interface formation process. The process involves two steps: formation of thin layer of silver oxide and subsequent growth of the TiO₂ film. For better understanding of the silver oxidation process, pure silver films were exposed to a low temperature Ar/O plasma for different time intervals providing a possibility to investigate early stages of the oxide film growth.     

Electrochemical C-V Characteristics and Photoluminescence of a-C∶N Films

Amorphous carbon (a-C) films and amorphous carbon films incorporating with the nitrogen (a-C∶N) were deposited on silicon substrates in a radio-frequency driven plasma enhanced chemical vapour deposition system, while the surface electrical properties of films were investigated by electrochemical capacitance-voltage measurements. It was examined the effect of the interface defects on the properties and deduced that the conducting type of a-C∶N films was n-type. Subsequently, a comparative studies of a-C and a-C∶N films were performed by photoluminescence spectra depending on the temperature. With the decrease of the temperature, the main band with peak energy of 2.48 eV in the a-C∶N films was more intense compared with the other three bands caused by amorphous C in the a-C films.     

化学气相沉积铜薄膜研究进展

本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。     

喷射沉积SiCP/Al复合材料及6066铝合金热挤压工艺的研究

作者应用喷射共沉积工艺制备 6 0 6 6 / Si Cp复合材料和 6 0 6 6铝合金锭坯 ,在不同的挤压比、挤压温度下挤压成　　型 ,用金相显微镜观察材料的显微组织 ,并测试了材料的力学性能。结果表明 :Si C/ Al复合材料喷射沉积状态的组织很疏松 ,存在许多的间隙 ,其密度约为理论密度的 86 % ,Si C颗粒在复合材料中分布不均匀 ,喷射沉积铝合金基体的致密度可达 90 % ;挤压过程使 Al/ Si Cp复合材料的大多数空隙消失 ,致密程度随挤压比的增大而增大 ,挤压比超过 14 .7后不会明显变化 ,而铝合金基体的致密程度与挤压比的变化关系不明显 ;挤压温度对材料的致密程度影响不大 ;Al/ Si Cp复合材料性能在挤压比超过 14 .7后变化不大 ;铝合金的性能不受挤压比变化的影响 ;而挤压温度过高使材料性能下降