Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm⁻³ which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm⁻³, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.     

CO2激光诱导液相沉积银的机理研究

激光诱导液相沉积的机理可大致分为光电化学机理、热电化学机理和热分解机理等。通过试验及分析表明 ,CO2 激光诱导液相沉积银属于简单的热分解机理。CO2 激光起到局域热源的作用 ,在激光辐照过程中 ,光照区介质溶液及基体表面均发生了极其复杂的物理化学变化 ,最后诱导产生的银沉积在基体表面并部分扩散到了基体内部 ,成为后续化学镀铜的催化中心及过渡层     

VOx薄膜的制备、电阻-温度特性及结构研究

VO2是一种热致相变材料.发生相变时,VO2的电阻、红外光透过率、反射率都会发生显著变化.采用直流反应磁控溅射法,通过改变氧氩比(O2:Ar)、工作气压、衬底温度等制备工艺参数,研究了工艺参数对VOx薄膜的结构、电阻-温度性能的影响.结果表明,当氧氩比为1.0:15、工作气压为2.0Pa时,制备的薄膜中VO2的含量较多;衬底温度为250℃时,制备的VOx薄膜的电阻一温度突变性能最佳.     

一种新型结构碳材料——碳管套碳纳米丝

以氢气和甲烷为气源,利用钟罩式微波等离子体化学气相沉积(MW PCVD)系统制备了一种新型结构碳材料——碳管套碳纳米丝,用扫描电子显微镜和拉曼光谱仪对它的形态结构和成份进行了分析。这种新型结构碳材料,具有与碳纳米管、碳纳米丝相似的性质,并在某些领域(如电子源探针、纳米电子器件等)具有很好的应用前景。     

类金刚石薄膜的Raman光谱分析及红外光谱特性

用酒精和氢气的混合气体为工作气体 ,在不同的酒精浓度下 (1 0 % ,1 5% ,2 0 % )下利用微波等离子体化学气相沉积法在较低温度下 (450～ 50 0℃ )以单晶硅为衬底制备出类金刚石薄膜样品。 Raman光谱分析了酒精浓度对薄膜中金刚石成份的含量的影响。红外光谱分析表明薄膜的红外光透过率与薄膜的表面形貌、薄膜结构有关。酒精浓度为 1 0 %时得到的金刚石薄膜的红外光透过率最高 ,达到 62～ 72 % ,同时透过率曲线因薄膜干涉而引起的振荡也最为显著。     

激光能量主动控制高超声速进气道研究现状

以注入激光能量的方式对高超声速进气道进行主动流动控制是提高超燃冲压发动机性能的一种重要方法。回顾了国际学者针对斜激波相互作用、Edney IV型激波相互作用和来流捕获这3项内容的控制方法和结果,为国内主动控制高超声速流场的研究提供了有益参考。     

真空电弧镀膜中金属液滴的热过程研究

本文建立了真空电弧镀膜中液滴热过程的理论模型，求解了沉积ＴｉＮ膜过程中液滴的温度与粒径变化。计算表明，液滴在飞行过程中温度和粒径不断减小；粒径较小的液滴温度降低较大，甚至可能发生凝固。计算实例能较好解释早期ＴｉＮ膜的电镜分析结果，揭示液滴在薄膜中引起两种不同微孔的机理。     

引风机内颗粒沉积的数值模拟

以重整化群k-ε 模型为基础,利用计算流体力学（computation fluid dynanics,CFD）对离心式引风机的内部流场进行数值模拟。采用拉格朗日颗粒轨道模型,得到固体颗粒在引风机内的运行轨迹;加入吹灰气流,通过数值模拟验证其减少颗粒沉积的可行性。     

超声振动辅助等离子沉积成形的研究

介绍了等离子沉积成形的原理、应用及其存在的优缺点,从超声原理出发介绍了超声振动对等离子沉积过程中晶粒及组织的影响,并设计了超声振动辅助等离子沉积成形的实验装置,对实验过程中以及该实验可能涉及的问题进行了探讨.     

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm^?1) and Raman (1117 cm^?1) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma‐enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as‐deposited films. The high degree of structural retention in the as‐deposited film allows for the beneficial formation of intrinsically porous silsesquioxane cages upon annealing in air. Complete oxidation of the silicon creates ‘Q’ groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as‐deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade‐off between improved mechanical properties and higher dielectric constants. Films annealed at 410 °C have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent‐less and low‐energy nature of iCVD make it attractive from an environmental safety and health perspective.