Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2–2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4–1.78 GPa and in the range 11.6–23.2 MPa of compressive stress.     

脉冲激光沉积法制备的PZT铁电薄膜的残余应力

根据压电本构方程和细观力学统计平均法，采用X射线衍射（XRD）测量Pb（Zr0.52Ti0.48）O5（PZT）铁电薄膜的残余应力。考虑激光沉积生长过程中，薄膜相变应力、热应力和本征应力对自由能的贡献，分析薄膜晶胞在晶体坐标系上的应力应变状态。由坐标转换将晶胞残余应力从晶体坐标系转换到样品坐标系得到任意取向晶粒的残余应力，通过取向平均得到薄膜样品坐标系上的残余应力。用脉冲激光沉积法（PLD）制备了不同厚度的PZT薄膜。利用X射线衍射分别采用细观力学统计平均法和传统sin^2φ法测量了PZT薄膜的残余应力。结果表明，两种结果在数值上是比较接近的（绝对差范围0．3～16．6MPa），残余压应力随着膜厚的增加从96MPa左右减少到45MPa左右。最后讨论了细观力学统计平均法的优缺点。     

Ionic Liquid Analogs of AlCl3 with Urea Derivatives as Electrolytes for Aluminum Batteries

The ionic liquid analog, formed through the mixture of urea and AlCl₃, has previously shown to serve as a low‐cost electrolyte for an aluminum‐graphite battery, while maintaining good performance and achieving high Coulombic efficiency. Undesirable are the relatively high viscosity and low conductivity of this electrolyte, when compared to chloroaluminate ionic liquids with organic cations. In this work, the fundamental changes to the electrolyte resulting from using derivatives of urea (N‐methyl urea and N‐ethyl urea), again mixed with AlCl₃, are examined. These electrolytes are shown to have significantly lower viscosities (η = 45, 67, and 133 cP when using N‐ethyl urea, N‐methyl urea, and urea, respectively, at 25 °C). The associated batteries exhibit higher intrinsic discharge voltages (2.04 and 2.08 V for N‐methyl urea and N‐ethyl urea electrolytes, respectively, vs 1.95 V for urea system@100 mA g^?1 specific current for ≈5 mg cm^?2 loading), due to changes in concentrations of ionic species. Aluminum deposition is directly observed to primarily occur through reduction of Al₂Cl₇^? when AlCl₃ is present in excess, in contrast to previously suggested cationic Al‐containing species, via operando Raman spectroscopy performed during cyclic voltammetry.     

UHVCVD外延设备的热场设计

介绍了超高真空化学气相沉积(UHVCVD)锗硅外延设备的加热室设计方法,完善了相关的炉体设计,相关温度指标达到设计标准。     

锥形图形衬底上氮化镓薄膜生长和表征

GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.     

衬底表面处理对原子层沉积方式生长铂金薄膜的影响

在这篇文章中,我们利用原子层沉积(ALD)的方式在硅衬底上生长铂金(反应源是(CH₃C₅H₄Pt(CH₃)₃)和氧气)。将经过氢氟酸处理和氧气处理的两种类型硅衬底进行生长对比实验来探究衬底表面处理对原子层沉积方式生长铂金薄膜的影响。相对于经氧化处理的硅衬底来说,在氢氟酸处理的硅衬底上淀积铂金薄膜有较长的滞后时间且生长过程不同。此外,即使在原子层沉积铂金薄膜实验之前利用氢氟酸处理硅衬底以去除天然氧化层,淀积实验完成后在铂金和硅衬底界面处仍有一层中间氧化层。文章解释了导致这种差异性的原因。     

煅烧温度和恒温时间对ZnO/AAO/Si组装体系的影响

以AAO/Si为模板,采用化学气相沉积(CVD)的方法在不同温度下,通过煅烧Zn粉和C粉的混合物制备ZnO/AAO/Si组装体系,并对其结构和性质进行了研究。扫描电镜(SEM)结果表明:随着煅烧温度的升高,AAO表面的孔洞逐渐被封堵,当温度达到900℃时,在AAO的表面出现了一层ZnO薄膜。X射线衍射(XRD)结果显示,700℃时在XRD图谱上观看到六角纤锌矿的ZnO的衍射峰,并且随着温度的升高,ZnO的衍射峰逐渐增强,当温度升至800和900℃时出现了ZnAl2O4的衍射峰。因此,化学气相沉积制备组装体系时的最适温为700℃。在700℃时煅烧不同恒温时间制备的ZnO/AAO/Si组装体系SEM图显示,随着恒温时间的延长,孔的封闭效应逐渐明显。     

Ultrathin and Ultralight Zn Micromesh-Induced Spatial-Selection Deposition for Flexible High-Specific-Energy Zn-Ion Batteries

Ultraflexible and ultralight rechargeable aqueous Zn-ion batteries (ZIBs) with the merits of environmental benignity and high security arise as promising candidates for flexible electronic systems. Nowadays, the energy density and cyclical stability of ZIBs on metal-based rigid substrates reach a satisfactory level, while the inflexible substrates severely prevent them from widespread commercial adoption in portable electronics. Although flexible substrates-engineered devices burgeon, the development of flexible ZIBs with high specific energy still faces great challenges. Herein, a flexible ultrathin and ultralight Zn micromesh (thickness of 8 µm and areal density of 4.9 mg cm⁻²) with regularly aligned microholes is fabricated via combining photolithography with electrochemical machining. The unique microholes-engineered Zn micromesh presents excellent flexibility, enhanced mechanical strength, and better wettability. Moreover, numerical simulations in COMSOL and in situ microscopic observation system certify the induced spatial-selection deposition of Zn micromesh. Accordingly, aqueous ZIBs constructed with polyaniline-intercalated vanadium oxide cathode and Zn micromesh anode demonstrate exceptional high-rate capability (67.6% retention with 100 times current density expansion) and cyclical stability (maintaining 87.6% after 1000 cycles at 10.0 A g⁻¹). Furthermore, the assembled pouch cell displays superb flexibility and durability under different scenarios, indicating great prospects in high-energy ZIBs and flexible electronics.     

La0.5Sr0.5CoO3的化学溶液淀积法制备与表征及其应用

采用化学溶液淀积法制备了具有纯钙钛矿结构和良好导电性能的La_(0.5)Sr_(0.5)CoO_3(LSCO)薄膜。LSCO的电阻率随着退火温度的升高、退火时间的增长和厚度增加而减小。650°C退火可以得到7mΩ·cm的电阻率。分别在LSCO和Pt衬底上制备了Bi_4Ti_3O_(12)(BTO)薄膜,分析结果表明,使用LSCO衬底对BTO的析晶有影响,击穿电压、铁电特性均有较大改善。     

激光驻波场中铬原子的三维沉积特性分析

利用近共振激光驻波场操纵中性原子实现纳米级条纹沉积是一种新型的研制纳米结构长度标准传递方法,但仅通过一维和二维形式的仿真不能给出激光驻波场作用下中性原子沉积纳米光栅的全部信息。利用半经典模型,从铬原子在高斯激光驻波场中的运动方程出发,通过四阶Rungo-Kutta法模拟了铬原子在高斯激光驻波场中的三维运动轨迹以及三维沉积条纹结构,并分析了原子束发散、色差和球差等因素对三维运动轨迹及沉积条纹结构的影响。结果表明,利用三维仿真形式模拟高斯激光驻波场中铬原子的运动得到的结果与一维和二维形式下相比可以直观地表现出其较为详细的本质。