复合聚全氟乙丙烯材料的介电及高频击穿性能研究

在聚全氟乙丙烯(FEP)中添加 TiO_2和 Al_2O_3,通过热压成型的方法制备了 FEP/TiO_2复合材料和 FEP/Al_2O_3复合材料,研究了氧化物添加量对复合材料介电常数、介电损耗和高频击穿性能的影响。结果表明,随氧化物含量的增加,复合材料的介电常数和介电损耗均增加;在同一添加量下,TiO_2对复合体系的介电性能影响较大。FEP/TiO_2复合材料的高频击穿性能随 TiO_2含量的增加而下降,在 TiO_2含量为4.0%(质量分数,下同)时,复合材料的损伤阈值已降为 FEP 材料损伤阈值的48.9 %。而 FEP/Al_2O_3复合材料的高频击穿性能随 Al_2O_3含量的增加而升高,当 Al_2O_3含量为1.2%时,复合材料的损伤阈值已增大到 FEP 材料损伤阈值的2倍,达到313 J/m~2。     

Flow Control Through the Use of Topography

In this work, optimal shaft shapes for flow in the annular space between a rotating shaft with axially-periodic radius and a fixed coaxial outer circular cylinder, are investigated. Axisymmetric steady flows in this geometry are determined by solving the full Navier-Stokes equations in the actual domain. A measure of the flow field, a weighted convex combination of the volume averaged square of the L₂-norm of the velocity and vorticity vectors, is employed. It has been demonstrated that boundary shape can be used to influence the characteristics of the flow field, such as its velocity component distribution, kinetic energy, or even vorticity. This ability to influence flow fields through boundary shape may be employed to improve microfluidic mixing or, possibly, to minimize shear in biological applications.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

Dielectric Resonators for the Measurement of Superconductor Thin Films Surface Impedance in Magnetic Fields at High Microwave Frequencies

We present the design and realization of cylindrical dielectric resonators operating in the 40–60 GHz frequency range, designed for the measurement of the surface resistance and of the surface reactance shift in High-T _c Superconductors (HTS) thin films in a dc magnetic field. The resonators are single tone, based on the TE ₀₁₁ mode, and multiple tone, the latter allowing in principle to exploit the simultaneous determination of the surface impedance at different frequencies. As an application example, we report the temperature and field dependencies of the effective surface impedance of some cuprate superconductors thin films. The results are compared with those obtained through the use of a standard metal cavity with a similar Q-factor and operating in the same frequency range. The comparison highlights a superior stability and a higher sensitivity, resulting in an increase of about two orders of magnitude in the resolution of the surface impedance measurement. By contrast, the dissipative part of the superconducting transition (above T/T _c = 0.97) is better studied with the metal cavity. We also present measurements in the vortex state in YBaCa₂Cu₃O_7−δ and Tl₂Ba₂CaCu₂O_8+x that show significantly different physics. PACS: 74.25 Nf.     

（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的异常

研究了（Ba1-xSrx）（Zn1/3Nb2/3）O3微波介质陶瓷温度系数的非线性变化以及异常的原因。根据CM公式，随着系统中Sr（Zn1/3Nb2/3）O3的增多，τc的异常是由于氧八面体的畸变导致的相转变（对称性降低）所造成的（晶体结构由无序立方相向有序赝立方相的连续变化）。相转变的发生相应影响了极化以及极化模式，这是造成τc异常的根本原因。     

湖泊藻类叶绿素-α和悬浮物浓度的高光谱定量遥感模型研究

本文利用地物光谱仪对太湖水体进行了光谱测量和同步采样分析，对获得的数据尝试用光谱分离法进行分析，从中分离出蓝藻和悬浮物的特征波峰，建立波峰高度与同步水质采样得到的叶绿素-α浓度和悬浮物浓度的对应关系，得出其遥感定量反演算法，并实际应用在OMIS成像光谱仪图像上．     

Thermally stimulated discharge current (TSDC) and dielectric constant of semiconducting glasses

In this paper the results of thermally stimulated discharge current (TSDC) and dielectric constant for 40PbO-60Bi₂O₃ glass thermoelectrets are presented. Measurements of TSDC and dielectric constant, ǵe, have been carried out in the temperature range 30–300°C. The thermoelectrets were prepared at different polarizing fields. The various observed peaks in the thermograms are discussed on the basis of space charge polarization. The trap energy is evaluated from the Garlick-Gibson plot of initial rise method. Similarly other parameters such as relaxation time, charge release etc are evaluated.     

可与氟树脂基板相匹敌的热可塑性树脂基板材料

概述了可以与氟树脂基板相匹敌的低介质特性的热可塑性树脂基板材料的开发和应用。     

基于组织协同进化分类算法的遥感图像目标识别

针对遥感图像目标识别问题,提出了一种基于组织协同进化分类算法的识别方法。它没有复杂的运算,训练和识别速度都很快。对实测遥感图像的实验表明,本文方法性能稳定,优于文献[3]和[4]中基于支撑矢量机的方法,识别率均达到了95％以上,且训练时间非常短,不到1秒钟。     

Hydrolysis of Fe(OH)SO4 in the presence of metallic iron

Hydrolysis of Fe(OH)SO₄ was carried out in the presence of metallic iron in order to prevent the formation of iron(III) oxides with strongly bonded sulphate. Under the conditions of the experiment, the products were found to be mixtures of ?-Fe₂O₃ and α-FeOOH. The occluded sulphate, if any, could be easily washed out with water. The hydrolysis reaction passes through an equilibrium state before coming to completion. The entropy with enthalpy of the hydrolysis corresponding to the equilibrium state were found to be 4 e.u. and 0·5 kJ/mol, respectively. The activation energy of the hydrolysis reaction was found to be 21 kJ/mol.