Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (111) substrate by ammonia molecular beam epitaxy have been reported. High resolution X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy and secondary ion mass spectroscopy have been used to study the influence of AlN thickness and AlGaN growth temperature on the quality of GaN. GaN grown on thicker AlN showed reduced dislocation density and lesser tensile strain. Three-dimensional growth regime was observed for GaN grown at lower AlGaN growth temperature while higher AlGaN growth temperature resulted in two-dimensional growth mode. The dislocation bending and looping at the AlGaN/AlN interface was found to have significant influence on the dislocation density and strain in the GaN layer. The evolution and interaction of threading dislocations play a major role in determining the quality and the strain states of GaN.     

过渡金属氮化物TinNm小团簇结构中的定域键

Ti、N形成的小团簇TinNm,当n＋m≤4时,一般出现线形和平面构型;当n＋m=5或6时,TinNm团簇异构体既有线形结构,也有平面结构,还有少数立体结构。线形结构大多形成强弱交替的定域键。平面结构中Ti—N键,随着原子数的增加,逐渐从共价键向离子键过渡,Ti失去电子增多,N得到电子也增多。而立体构型中大多形成离域键,验证了Anderson理论。     

测试条件对聚氯乙烯树脂稀溶液粘数的影响

聚氯乙烯树脂稀溶液粘数是聚氯乙烯树脂的一项重要指标,它的高低决定着产品的不同用途。本实验测试了几种不同测试条件如测试温度、黏度计毛细管直径、溶剂浓度等对聚氯乙烯树脂稀溶液粘数结果所产生的影响,通过实验数据的理论分析和计算,对原因进行了具体的分析。这些分析结果的获得对提高粘数分析的准确性,对于指导实际生产,规范检验操作,修订检验标准都有着重要的意义。     

Photoconductivity and photoluminescence under bias in GaInNAs/GaAs MQW p-i-n structures

The low temperature photoluminescence under bias (PLb) and the photoconductivity (PC) of a p-i-n GaInNAs/GaAs multiple quantum well sample have been investigated. Under optical excitation with photons of energy greater than the GaAs bandgap, PC and PLb results show a number of step-like increases when the sample is reverse biased. The nature of these steps, which depends upon the temperature, exciting wavelength and intensity and the number of quantum wells (QWs) in the device, is explained in terms of thermionic emission and negative charge accumulation due to the low confinement of holes in GaInNAs QWs. At high temperature, thermal escape from the wells becomes much more dominant and the steps smear out.     

Power Spectral Density Analysis of Pressure Fluctuation in Pneumatic Conveying of Powders

In order to reveal the unsteady features of gas–solid flow, the pressure fluctuations were measured at different locations along the length of the pipeline while conveying powders through the pipeline. Power spectral density (PSD) functions were obtained for the analysis of the pressure fluctuation. Two types of powders (fly ash and alumina) were used in this analysis. The PSD analysis was conducted by taking into account different aspects such as flow conditions (dilute or dense), location of transmitter (top and bottom transmitters), location of transmitter along the length of the pipeline (three different locations), material property (fly ash or alumina), etc. Analysis of signals from top and bottom transmitters shows that it is not possible to identify the flow mode at upper and lower portions of pipeline. The magnitude of power is found to be higher for alumina as compared to fly ash. PSD parametric analysis reveals that frequency bandwidth and average power decreases exponentially with increase in solid loading ratio.     

稀乙烯制乙苯和纯乙烯制乙苯装置成本和能耗对比

干气制乙苯技术能有效地利用乙烯资源,提高炼油厂效益、降低乙苯产品的生产成本,随着生产技术水平的提高和市场需求的不断增加,干气制乙苯装置逐渐增多,本文对比了广州石化干气制乙苯装置和苯乙烯装置乙苯单元的生产成本和能耗。     

双加压法制稀硝酸工艺中二次水改一次水的利与弊

从经济效益、节能减排、设备腐蚀、换热器的换热效果变化、水质要求以及循环水易于结垢所带来的影响等方面,较全面地阐述了双加压制稀硝酸工艺中二次水改一次水的利与弊.     

循环流化床稀相区对流换热的理论分析和实验研究

对循环流化床上部稀相区气固混合物横掠圆管的对流换热研究,多数是针对鼓泡床的研究,而对循环流化床上部稀相区的对流换热研究目前还很少。本文对稀相含尘气流横向冲刷圆管的对流换热进行了研究,并在理论分析的基础上,在热态循环流化床实验台的上部稀相区进行了实验。采用平均粒径分别为137μm,146μm和326μm的石英砂为床料。实验结果表明,稀相含尘气流与纯空气横掠圆管时的对流换热系数之比hd/hg主要受稀相含尘气流密度和颗粒粒径的影响,通过理论分析和实验数据的拟合,得到稀相含尘气流横掠圆管的准则方程。研究基于热态实验,结果更接近于实际工况,可为循环流化床的设计提供理论依据。     

P型氮化镓退火及发光二极管研究

对金属有机物化学气相淀积(MOCVD)技术在蓝宝石衬底上生长的p型氮化镓(p-GaN)在氮气气氛下的热退火进行研究。用Hall测试系统测量不同温度、不同时间退火后样品的电学性能;对一组蓝光LEDs分别进行不同退火温度、退火时间实验,对退火前后量子阱峰值强度半高宽和积分面积变化进行了比较研究。实验表明p-GaN在825°C、8min条件下退火可以取得较高的空穴浓度,而LED在750°C、30min退火可以使量子阱的半高宽展宽较小,积分强度降低百分比小,而且LED芯片正向电压也较小。     

Gold Nitride: Preparation and Properties

We review the currently known methods of producing gold nitride and report on the influence of electrically isolated substrates on the growth of gold nitride films by reactive ion sputtering (RIS). It is found that isolation of the substrate decreases grain size and increases nitrogen content, the latter attributed to longer nitrogen ion lifetime on the surface of the growing film. The chemical reactivity of gold nitride is compared with that of pure gold films using the adsorption of 1-dodecyl mercaptan (CH₃(CH₂)₁₁SH) as a model system and it is found that there is no significant difference between gold films and gold nitride in terms of Au–S binding. However, gold nitride nanoparticles are suggested to be worthy of further investigation in terms of their catalytic properties.