Heterojunction Architecture of N‐Doped WO3 Nanobundles with Ce2S3 Nanodots Hybridized on a Carbon Textile Enables a Highly Efficient Flexible Photocatalyst

The availability of robust, versatile, and efficient photocatalysts is the main bottleneck in practical applications of photocatalytic degradation of organic pollutants. Herein, N‐WO₃/Ce₂S₃ nanotube bundles (NBs) are synthesized and successfully immobilized on a carbon textile, resulting in a flexible and conducting photocatalyst. Due to the large interfacial area between N‐WO₃ and Ce₂S₃, the interwoven 3D carbon architecture and, more importantly, the establishment of a heterojunction between N‐WO₃ and Ce₂S₃, the resultant photocatalyst exhibits excellent light absorption capacity and superior ability to separate photoinduced electron–hole pairs for the photocatalytic degradation of organic compounds in air and water media. Theoretical calculations confirm that the strong electronic interaction between N‐WO₃ and Ce₂S₃ can be beneficial to the enhancement of the charge carrier transfer dynamics of the as‐prepared photocatalyst. This work provides a new protocol for constructing efficient flexible photocatalysts for application in environmental remediation.     

High Areal Capacitance of N‐Doped Graphene Synthesized by Arc Discharge

The lack of cost effective, industrial‐scale production methods hinders the widespread applications of graphene materials. In spite of its applicability in the mass production of graphene flakes, arc discharge has not received considerable attention because of its inability to control the synthesis and heteroatom doping. In this study, a facile approach is proposed for improving doping efficiency in N‐doped graphene synthesis through arc discharge by utilizing anodic carbon fillers. Compared to the N‐doped graphene (1–1.5% N) synthesized via the arc process according to previous literature, the resulting graphene flakes show a remarkably increased doping level (≈3.5% N) with noticeable graphitic N enrichment, which is rarely achieved by the conventional process, while simultaneously retaining high turbostratic crystallinity. The electrolyte ion storage of synthesized materials is examined in which synthesized N‐doped graphene material exhibits a remarkable area normalized capacitance of 63 µF cm^?2. The surprisingly high areal capacitance, which is superior to that of most carbon materials, is attributed to the synergistic effect of extrinsic pseudocapacitance, high crystallinity, and abundance of exposed graphene edges. These results highlight the great potentials of N‐doped graphene flakes produced by arc discharge in graphene‐based supercapacitors, along with well‐studied active exfoliated graphene and reduced graphene oxide.     

Mach—Zehnder干涉仪法测定染料掺杂高聚物薄膜复数电光系数

本文介绍了一种使用Ｍａｃｈ－Ｚｅｈｎｄｅｒ干涉仪同时测定染料掺杂高聚物薄膜电系数张量实部和虚部的方法，用该方法测量了掺染料１号（ＤＲ１）有机玻璃到（ＰＭＭＡ）膜的复数电光系数张量分量ｒ１３和ｒ３３并讨论了膜内多重反射效应对测量精度的影响，给出了修正公式和实验结果。     

Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

We employed AgNO₃ solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg_0.78Cd_0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO₃ solution at room temperature. The typical carrier concentrations of holes was 3 × 10¹⁶ cm⁻³ at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size. This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and the high quantum efficiency of the photodiode.     

绒面掺铝氧化锌透明导电薄膜研究进展

绒面掺铝氧化锌(AZO)透明导电薄膜由于电阻率低、在可见光区域透过率高、绒面结构能有效散射入射光,提高太阳电池光电转换效率,被广泛应用于太阳电池前电极。概述了绒面AZO薄膜的制备方法,重点介绍了磁控溅射技术沉积AZO薄膜后再进行湿法刻蚀制绒面方法,制备的样品呈现"坑状"或"类月球地貌"的绒面,并讨论了工艺对薄膜结构、光电性能和刻蚀行为的影响,最后介绍了绒面AZO薄膜在硅薄膜太阳电池中的应用,进一步降低生产成本和实现大规模产业化生产是绒面AZO薄膜的发展趋势。     

自由空间全光通信链路的设计方法

在自由空间光通信系统中 ,由于中继距离的不确定性 ,相应的链路传输损耗也不同 ,因而各中继器有不同的增益。针对自由空间光通信的这一特点 ,介绍了一种解决方法 ,即采用具有自动增益控制 ( AGC)的光放大器作为中继器 ,并分析噪声累积对系统性能的影响。结果表明 ,采用掺铒光纤放大器可以得到好的系统性能     

液晶染料填充一维光子晶体局域模的电场调控及其光激发特性研究

基于液晶的电场调控特性及激光染料作为增益介质的增益模型,通过传输矩阵法理论研究了液晶染料填充一维光子晶体局域模的电场调控及其光激发特性。数值结果表明:随着垂直入射光和电场方向的夹角θ的增大,局域模波长向短波方向移动;当角度θ在(0°,90°)范围内变化时,局域模波长最大调控量达56.7nm;激光染料泵浦后不改变局域模的位置,但局域模的透射率变大了;随着增益系数的增大,局域模透射率先增大后减小,不同局域模对应不同的泵浦阈值,并且随着夹角θ的增大局域模对应的泵浦阈值将减小。     

金属离子掺杂纳米TiO2薄膜光阳极的性能研究

采用溶胶-凝胶法在玻璃衬底上制备TiO2多孔薄膜,掺杂不同功函数的金属离子制备M-TiO2纳米薄膜电极,XRD、AFM,UV-Vis检测M-TiO2结构、形貌和性能.结果表明:掺杂摩尔分数2%的金属离子没有改变TiO2的晶格结构,但其吸收峰在可见光区都发生明显的红移,禁带宽度降低,掺杂后的M-TiO2电极比没有掺杂的T...     

ZnS/CuInS2/Mo/钠钙玻璃衬底上射频溅射ZnO∶Al薄膜的SEM研究

结合ZnO薄膜在Cu-III-VI2基薄膜太阳电池上的应用，采用射频磁控溅射技术以陶瓷ZnO∶Al2O3为靶材在ZnS/CuInS2/Mo/钠钙玻璃衬底上于固定沉积条件下低温（200℃）制备了铝掺杂氧化锌（ZnO∶Al）薄膜. 运用扫描电子显微镜研究了底层材料特别是ZnS和CuInS2的生长参数对沉积的ZnO∶Al薄膜的表面形貌的影响. 实验发现，衬底材料中硫含量的增加（无论来自ZnS还是来自CuInS2) ，都会引起沉积ZnO∶Al薄膜结晶质量的提高，而金属含量的增大将有利于薄膜均匀性的改进.