Chemical natures and distributions of metal impurities in multicrystalline silicon materials

We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.     

熔化极电弧焊熔滴过渡过程的高速摄像

介绍了适合拍摄熔化极电弧焊熔滴过渡过程的高速摄像系统,对背景光源的种类和选择、光学透镜的选用及光路调整中应注意的问题进行了说明,对如何确定熔滴激光阴影像的光学放大率、高速摄像机摄取图像的分辨率、曝光时间及摄像速度等方面内容也进行了说明,其结论对熔化极电弧焊熔滴过渡过程的高速摄像技术有较高的参考价值。     

基于元胞自动机的红外图像边缘检测新方法

元胞自动机是一种新的快速、有效的实现各种图像处理算法的理论工具,其核心是状态转移函数的确定.针对红外图像边缘检测,研究并实现了三种状态转移函数:最大最小值法、阈值法和形态梯度法.和传统边缘检测方法的对比实验表明,基于元胞自动机的边缘检测方法整体上不仅检测效果好,且可实时实现.     

IPv4向IPv6过渡策略研究

为解决IPv4的设计缺陷,国际互联网工程任务组(IETF)开发了新一代Internet协议IPv6,但由于IPv4与IPv6之间存在着很大的差异,同时存在众多基于IPv4协议的网络及应用,因此,要用新的IPv6代替旧的IPv4只能采用逐步演进的办法,文章就现存的过渡策略做了研究和分析.     

CuO掺杂对Ba(Ti_(0.91)Zr_(0.09))O_3陶瓷介电性能的影响

采用固相反应法制备了CuO掺杂的Ba(Ti0.91Zr0.09)O3陶瓷,借助XRD、SEM、Agilent4284A测试仪,研究了CuO掺杂对Ba(Ti0.91Zr0.09)O3陶瓷的结构及介电性能的影响.结果表明,CuO具有细化陶瓷晶粒的作用.随着CuO掺杂量的增加,Ba(Ti0.91Zr0.09)O3陶瓷的斜方-四方相变峰出现介电弛豫现象,相变点处的介电常数增加,并且居里峰出现相变弥散现象.当w(CuO)=0.38%时,斜方-四方相变峰的弛豫程度最大.     

Novel Oxide Trap Behavior in Ultra Thin Gate and Its Study by PDO Method

The degradation of MOSFETs under high field stress has been investigated for a long time. The degradation is due to the newly generated traps. As the gate thickness scaled down rapidly, a conventional method for detecting oxide traps, such as C-V or subthreshold swing, is no longer effective. Some new phenomena also appear, such as Stress Induced Leakage Current (SILC) and soft-breakdown. The oxide traps' behavior and their characteristics are the key problems in the study of degradation. By extracting the change of transition coefficients from the I-V curve and using the PDO (Proportional Differential Operator) method, various oxide traps can be distinguished and as would be helpful in the determination of trap behavior changes during the degradation process.     

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects

The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.     

A Matter of Size and Stress: Understanding the First‐Order Transition in Materials for Solid‐State Refrigeration

Solid‐state magnetic refrigeration is a high‐potential, resource‐efficient cooling technology. However, many challenges involving materials science and engineering need to be overcome to achieve an industry‐ready technology. Caloric materials with a first‐order transition—associated with a large volume expansion or contraction—appear to be the most promising because of their large adiabatic temperature and isothermal entropy changes. In this study, using experiment and simulation, it is demonstrated with the most promising magnetocaloric candidate materials, La–Fe–Si, Mn–Fe–P–Si, and Ni–Mn–In–Co, that the characteristics of the first‐order transition are fundamentally determined by the evolution of mechanical stresses. This phenomenon is referred to as the stress‐coupling mechanism. Furthermore, its applicability goes beyond magnetocaloric materials, since it describes the first‐order transitions in multicaloric materials as well.     

一种使用TE11为过渡模的TE01-HE11模式变换器设计

基于弯曲圆波导耦合理论和规则圆波导突变结构模式匹配法, 利用MATLAB软件编写的相关数值计算程序得到波导模式转换结构的优化参量, 最终使用CST软件对模型进行了仿真和验证.该系统主要由三部分组成: 一个TE01-TE01的过渡器, TE01-TE11和TE11-HE11的圆波导模式转换器.计算结果表明, 该TE01-HE11模式转换系统在24.13 GHz的频率有5%的带宽、转换效率超过了99%.计算结果、仿真结果和实物冷测结果是一致的.     

Advent of 2D Rhenium Disulfide (ReS2): Fundamentals to Applications

Rhenium disulfide (ReS₂) is a two‐dimensional (2D) group VII transition metal dichalcogenide (TMD). It is attributed with structural and vibrational anisotropy, layer‐independent electrical and optical properties, and metal‐free magnetism properties. These properties are unusual compared with more widely used group VI‐TMDs, e.g., MoS₂, MoSe₂, WS₂ and WSe₂. Consequently, it has attracted significant interest in recent years and is now being used for a variety of applications including solid state electronics, catalysis, and, energy harvesting and energy storage. It is anticipated that ReS₂ has the potential to be equally used in parallel with isotropic TMDs from group VI for all known applications and beyond. Therefore, a review on ReS₂ is very timely. In this first review on ReS₂, we critically analyze the available synthesis procedures and their pros/cons, atomic structure and lattice symmetry, crystal structure, and growth mechanisms with an insight into the orientation and architecture of domain and grain boundaries, decoupling of structural and vibrational properties, anisotropic electrical, optical, and magnetic properties impacted by crystal imperfections, doping and adatoms adsorptions, and contemporary applications in different areas.