Lattice Distortion Analysis Directly from High Resolution Transmission Electron Microscopy Images—the LADIA Program Package

Direct strain mapping from high resolution transmission electron microscopy images is possible for coherent structures.At proper imaging conditions the intensity peaks in the image have a constant spatial relationship with the projected atom columns.This allows the determination of the geometry of the projected unit cell without comparison with image simulations.The fast procedure is particularly suited for the analysis of large areas.The software package LADIA is written in the PV-WAVE code and provides all necessary tools for image processing and analysis.Image iintensity peaks are determined by a cross-correlation technique,which avoids problems from noise in the low spatial frequency renage.The lower limit of strain that can be detected at a sampling rate of 44 pixels/nm is ≈2%.     

束流测量中的工频陷波器

提出了一种应用于电子束曝光机束流测量中的自动跟踪工频陷波器，给出电路结构，基于对其工作原理的分析，介绍了提高陷波器跟踪精度的设计要点及调试方法。     

透射型定时探测器

本文介绍了由微道板构成的透射型定时探测器,得到的飞行时间系统的时间分辨为280ps。并对进一步改善时间特性作了讨论。     

Structure of soya glycinin and conglycinin gels

Gels of glycinin and conglycinin formed at various heating temperatures, in the absence and presence of 0.2M sodium chloride were characterised by transmission electron microscopy. In distilled water both proteins formed gels consisting of strands with a thickness of 10–15 nm. The strands of glycinin were very regular and cross sections of strands showed a hollow cylindrical structure. In the presence of sodium chloride, glycinin formed an aggregated gel structure at 85°C, but at 95°C an ordered strand structure was formed. Dissociation of the quaternary structure on heating and reassociation of subunits into regular strands were considered the most probable mechanisms for strand formation from glycinin. The aggregated structure at 85°C was interpreted as a transient state prior to dissociation. Conglycinin rich gels were less regular and more crosslinked than gels of glycinin. Also, the strands of conglycinin showed a complex mode of aggregation possibly in the form of double spirals. The addition of sodium chloride caused a denser and more aggregated structure at 75 and 85°C, but the effects were not as drastic as in the case of glycinin. Heating temperature had only minor effects on the gel structure in the range studied.     

Scanning electron microscope electron detector with a radial type discrete dynode electron multiplier

A discrete dynode electron multiplier with radial flux of electrons was built and tested in the range of low‐voltage scanning electron microscopy as a backscattered electron detector of topographic contrast. The multiplier collects backscattered electron emitted in a specific range of take‐off angles and over the whole azimuth angular range enabling large solid collection angle. Multipliers with different dynode shapes were studied theoretically with the use of the software for particle optics and three assemblies were built and tested experimentally. The gain estimation, assessment of the type of detected electrons (secondary electron or backscattered electron), imaging the spatial collection efficiency and signal‐to‐noise measurements were performed.     

Extracting Electron Densities in N-Type GaAs From Raman Spectra: Theory

In this paper, we present the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10¹⁶ cm⁻³ and 10¹⁹ cm⁻³. Compared to other theories, this theory is unique in two respects: 1) the many-body effects are treated self-consistently and 2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q²/α), where Q is the magnitude of the normalized wave vector and α is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. The results are then applied to obtain the carrier concentrations from Fermi energies in the context of line shapes in Raman spectra due to the coupling between longitudinal optical phonons and plasmons. Raman measurements have been proposed as a non-destructive method for wafer acceptance tests of carrier density in semiconductor epilayers. The interpretation of Raman spectra to determine the majority electron density in n-type semiconductors requires an interdisciplinary effort involving experiments, theory, and computer-based simulations and visualizations of the theoretical calculations.     

Structure modification of rapidly solidified Al-11 wt% Si alloy by the addition of 2 wt% Fe

An investigation of the structure formation of as-cast Al-11 wt% Si (AlSi11) and Al-11 wt% Si-2 wt% Fe (AlSi11Fe2) rapidly solidified (RS) ribbons is performed. Ribbon samples are examined in detail using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A nanoscale thickness layer of Si-precipitations, at both Al-grains boundary and oxide/Al-matrix interface, is found to be characteristic for “pure” AlSi11 ribbons. For Fe-doped ribbons, this layer comprises Fe-containing phase also, which appears to possess amorphous nature and is situated between the Si-grains and Al-matrix. A possible mechanism of altering the thermally activated volume diffusion of elements, due to the effect of Fe on the structure modification, is speculated based on the obtained results.     

Non-linear current–voltage characteristics related to native defects in SrTiO3 and ZnO bicrystals

SrTiO₃ and ZnO bicrystals with various types of boundaries were fabricated in order to examine their current–voltage characteristics across single grain boundaries. Their grain boundary structures were also investigated by high-resolution transmission electron microscopy. In Nb-doped SrTiO₃, electron transport behaviors depend on the type of boundaries. Random type boundaries exhibit highly non-linear current–voltage characteristics, while low angle boundaries show a slight non-linearity. On the contrary, undoped ZnO does not exhibit non-linear current–voltage characteristics in any type of boundaries including random ones. It is suggested that the differences observed in current–voltage properties between the two systems are mainly due to the difference in the accumulation behavior of acceptor-like native defects at grain boundaries. A clear non-linearity is obtained by means of Co-doping even for the highly coherent Σ1 boundary in a ZnO bicrystal. This is considered to result from the production of acceptor-like native defects by Co-doping.     

量子阱红外探测器能带结构的计算

利用电子波在阱与垒的界面上的反射及干涉效应，计算了量子阱红外探测器(QWIP)的能带结构，并对其适用性进行了分析和讨论。通过与K-P模型比较发现，本方法对计算较宽势阱(阱宽大于4nm)的量子阱结构的电子态适合。在垒宽和阱宽不变条件下，用两种方法计算得到的AlGaAs／GaAs量子阱材料中Al组分x与吸收峰值波长λp的关系曲线基本相同。结果说明，在较宽的范围内，本方法对QWIP能带结构的计算是适用且简便的。     

一种新的HEMT小信号模型参数提取方法

介绍了一种高电子迁移率晶体管(HEMT)的小信号参数提取方法——综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数，其次介绍了多偏置点优化算法。最后，以PHEMT器件为例进行鲁棒性和精确性测试，实验采用一系列随机起始值，结果表明，提取的参数值与经验值相差小于1％。