微量元素添加对多元Sn-Bi系焊料合金组织与性能的影响

传统焊料合金由于熔点温度高,不能满足部分有机基板、温度敏感器件以及3D封装等多层封装形式的低温封装要求.以Sn-Bi合金为基体,通过添加微量Ag、Cu、Co和Ni元素形成新型多元合金,对多元合金的熔化性能、润湿性能、微观组织和力学性能进行研究.结果 表明:微量元素的添加(质量分数0～1％)对多元Sn-Bi系合金的固相线...     

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Silicon oxides and nitrides are key materials for dielectrics and encapsulation layers in a class of silicon‐based high performance electronics that has ability to completely dissolve in a controlled fashion with programmable rates, when submerged in bio‐fluids and/or relevant solutions. This type of technology, referred to as “transient electronics”, has potential applications in biomedical implants, environmental sensors, and other envisioned areas. The results presented here provide comprehensive studies of transient behaviors of thin films of silicon oxides and nitrides in diverse aqueous solutions at different pH scales and temperatures. The kinetics of hydrolysis of these materials depends not only on pH levels/ion concentrations of solutions and temperatures, but also on the morphology and chemistry of the films, as determined by the deposition methods and conditions. Encapsulation strategies with a combination of layers demonstrate enhancement of the lifetime of transient electronic devices, by reducing water/vapor permeation through the defects.     

氮氧化硅薄膜红外吸收特性的研究

利用等离子体增强化学气相沉积法沉积氮氧化硅(SiOxNy)薄膜,通过X射线光电子能谱仪、傅里叶变换红外光谱仪、椭偏仪等表征技术,研究不同N2O与NH3流量比R条件下薄膜的组分、光学常数及红外吸收特性.研究结果表明:随着流量比R的增加,SiOxNy薄膜中O的相对百分含量提高,N含量降低,而Si含量基本不变;薄膜由于Si-...     

Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

Assessing material qualities and efficiency limits of III–V on silicon solar cells using external radiative efficiency

The paper presents a quantitative approach to the investigation and comparison of the material qualities of III–V on silicon (III–V/Si) solar cells by using external radiative efficiencies. We use this analysis to predict the limiting efficiencies and evaluate the criteria of material quality in order to achieve high‐efficiency III–V/Si solar cells. This result yields several implications for the design of high‐efficiency III–V/Si solar cells. Copyright © 2016 John Wiley & Sons, Ltd.     

宽带多模干涉型光耦合器的设计

文章通过分析制约多模干涉型耦合器带宽的因素,提出三种可提高MMI带宽的设计方法。仿真结果表明,三种方法均可以不同程度地提高MMI的工作波长范围,对比于常规MMI耦合器的60nm工作波长范围,采用优化设计方法可将其带宽提高到140nm至210nm。当同时采用三种设计方法后,带宽可以达到300nm,是原结构带宽的5倍。     

硅片研磨表面状态的改善和研磨液的改进

在硅片研磨过程中,由于应力的积累和剧烈的机械作用,硅片表面损伤严重,碎片率增加.介绍了一种改进的研磨液,不但把剧烈的机械作用转变为比较缓和的化学-机械作用,还能起到其他较好的辅助作用并对其各成分作用,进行了理论分析.硅片表面状态得到了一定程度的改善,提高了生产效率.     

Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon

The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (10¹⁶) and a higher level (2×10¹⁹) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si²⁸ as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping.     

硅薄膜矩形空芯波导太阳能电池光捕获性能的研究

为提高薄膜电池对光的捕获能力, 将平面硅薄膜电池制 作成矩形空芯波导结构,对其太阳光注入方式、光捕获能力和光-电转换效能进行了理论和 实验探讨。基于 多层膜反射理论和波导反射模型对波导电池光捕获效果的预测表明,波导电池能够将入射光 限制在空芯结 构内多次反射和吸收,具有较平面电池更高的光捕获能力。测定了不同平行光束在不同入射角度 下平面和波导 电池的光捕获功率和光-电转换效能的结果表明,波导电池对入射光功率近似全部捕获,其 光-电功率转换效能 较对应的平面电池有3～5倍的提升。对不同截面尺寸和长度的单结空芯波导电池光捕获率 进行了计算,提 出从电池膜层结构和空芯几何尺寸参数优化硅薄膜矩形空芯波导电池的思路,通过优化有 望实现用小于多结平面电池外形尺寸的单结空芯波导电池达到更好的光捕获效果。     

The BER theoretical model and properties of SiPM‐based receiver for OOK optical communication

The bit error rate (BER) theory of silicon photomultiplier (SiPM) based on‐off keying optical communication receiver, which introduces photon equivalent threshold is established. The optical crosstalk effect, the dark counts, the amplitude fluctuations of output pulses of SiPM, the baseline fluctuation, the shape of the incident light pulse, the adjacent symbol interference as well as the photon detection efficiency (PDE) are considered in the theory model. The numerical result shows that the average minimum optical power required is much smaller than that of the avalanche photodiode‐based receivers under the same conditions. The BER of SiPM‐based optical communication receiver is very sensitive to the PDE and optical crosstalk (OC) probability of SiPM. For the application of digital optical communication, a SiPM with high PDE but low OC probability and low dark count rate is a preference, under the premise that the output pulse is fast enough. For the state‐of‐the‐art SiPMs, the dark count rate is small enough to obtain adequate BER, and the OC effect is not a big limitation of the performance of SiPM‐based receiver. Moreover, the amplitude fluctuation and the baseline fluctuation of the SiPM‐based receiver are not bottlenecks of the performance in practice.