FindOut: Finding Outliers in Very Large Datasets

Finding the rare instances or the outliers is important in many KDD (knowledge discovery and data-mining) applications, such as detecting credit card fraud or finding irregularities in gene expressions. Signal-processing techniques have been introduced to transform images for enhancement, filtering, restoration, analysis, and reconstruction. In this paper, we present a new method in which we apply signal-processing techniques to solve important problems in data mining. In particular, we introduce a novel deviation (or outlier) detection approach, termed FindOut, based on wavelet transform. The main idea in FindOut is to remove the clusters from the original data and then identify the outliers. Although previous research showed that such techniques may not be effective because of the nature of the clustering, FindOut can successfully identify outliers from large datasets. Experimental results on very large datasets are presented which show the efficiency and effectiveness of the proposed approach. Received 7 September 2000 / Revised 2 February 2001 / Accepted in revised form 31 May 2001 Correspondence and offprint requests to: A. Zhang, Department of Computer Science and Engineering, State University of New York at Buffalo, Buffalo, NY 14260, USA. Email: azhang@cse.buffalo.eduau     

Shallow Linear Action Graphs and their Embeddings

Action calculi, which generalise process calculi such as Petri nets, π-calculusand ambient calculus, have been presented in terms of action graphs. We here offer linear action graphs as a primitive basis for action calculi. This paper presents the category of embeddings of undirected linear action graphs without nesting, using a novel form of graphical reasoning which simplifies some otherwise complex manipulations in regular algebra. The results are adapted in a few lines to directed graphs. This work is part of a long-term search for a uniform behavioural theory for process calculi. Received October 2000 / Accepted in revised form April 2001     

Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

微晶合金在电流互感器中的应用

从微晶合金的性能特点出发，分析了其在电流互感器中的应用前景。     

Growth Stresses in the Oxide Scales on TiAl Alloys at 800 and 900°C

In the oxidation of TiAl alloys, the role of scale-growth stresses formed during oxidation has, thus far, been unknown. In the present paper the oxide-growth stresses were investigated by the deflection-test method in monofacial oxidation (DTMO) accompanied by acoustic-emission measurements. On unmodified surfaces the growth stresses are compressive and reach levels of around –100 MPa. At the same time, significant acoustic emission occurs indicating that even under isothermal conditions, stresses are relieved by a scale-cracking mechanism. For oxide scales on TiAl surfaces, which had been ion implanted with chlorine before oxidation, a very thin protective alumina layer is formed which, however, develops growth stresses in the range of several GPa, accompanied by intensive acoustic emission. In all stress–time curves, a dynamic situation is observed. This consists of phases of stress relief by scale microcracking and phases of stresses increase due to crack healing and further oxide growth. As a result, the level of stress as a function of oxidation time, is characterized by an oscillating course.     

Numerical simulations of specimen size and mismatch effects in ductile crack growth - Part II: Near-tip stress fields

The effect of ductile crack growth on the near tip stress field in two different specimen geometries has been investigated. For homogeneous specimens it is observed that the peak stress level increases with ductile crack growth. The effect is most pronounced up to about 1 mm of crack growth. For low and intermediate hardening there is a significant effect of specimen size on the stress level. In case of mismatch in yield stress, the simulations show that the increase in stress level in the material with the lower yield stress is of a similar magnitude as is the case for stationary cracks. In case of ductile crack growth deviation from the original crack plane occurs, the highest stresses are still found close to the interface, and not in front of the current crack tip.     

Colour Centres and Energy Transfer in BaF2-xClx:Eu2+ Phosphors

The optical absorption spectra of BaF2-xClx:Eu2 after ultraviolet (UV) light excitation were investigated.The differences between the absorption spectra after and before excitation (DAS) were observed.The DAS increase at both the high and the low energy side of F band in BaF2-xClx:Eu2 after 245 nm UV light excitation.The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres (association of F(Cl-) centres), whose absorption band matches the HeNe laser better, may explain the latter.In the write-in process, the transfer of electrons is via tunneling.In the readout process, the transfer of electrons captured in F(F-) and Fa centres is more likely via tunneling, and that of F(Cl-) centres is more likely via conduction band.     

Deposition of thin film silicon using the pulsed PECVD and HWCVD techniques

We report on the use of pulsed plasma-enhanced chemical vapor deposition (P-PECVD) technique and show that “state-of-the-art” amorphous silicon (a-Si:H) materials and solar cells can be produced at a deposition rate of up to 15 Å/s using a modulation frequency in the range 1–100 kHz. The approach has also been developed to deposit materials and devices onto large area, 30 cm×40 cm, substrates with thickness uniformity (<5%), and gas utilization rate (>25%). We have developed a new “hot wire” chemical vapor deposition (HWCVD) method and report that our new filament material, graphite, has so far shown no appreciable degradation even after deposition of 500 μm of amorphous silicon. We report that this technique can produce “state-of-the-art” a-Si:H and that a solar cell of p/i/n configuration exhibited an initial efficiency approaching 9%. The use of microcrystalline silicon (μc-Si) materials to produce low-cost stable solar cells is gaining considerable attention. We show that both of these techniques can produce thin film μc-Si, dependent on process conditions, with 1 1 1 and/or 2 2 0 orientations and with a grain size of approx. 500 A. Inclusion of these types of materials into a solar cell configuration will be discussed.     

Feasibility study of absolute activity measurement with metallic magnetic microcalorimeters

We report on a feasibility study on precise determination of mass-specific activity of low-energy emitting radioisotopes. Conventional methods of activity measurement suffer from source self-absorption and a strong decrease in detection efficiency for low-energy electrons and photons. We propose a new method based on metallic magnetic microcalorimeters with the source embedded in the detector target in a 4π geometry. First results with a ⁵⁵Fe source show that electrons and photons are detected with a detection efficiency close to unity and with little loss of energy for electrons. The aim of this study is to provide standards of activity with very low uncertainties in the framework of radiation metrology.     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.