Al‐Doped Black Phosphorus p–n Homojunction Diode for High Performance Photovoltaic

2D layered materials based p–n junctions are fundamental building block for enabling new functional device applications with high efficiency. However, due to the lack of controllable doping technique, state‐of‐the‐art 2D p–n junctions are predominantly made of van der Waals heterostructures or electrostatic gated junctions. Here, the authors report the demonstration of a spatially controlled aluminum doping technique that enables a p–n homojunction diode to be realized within a single 2D black phosphorus nanosheet for high performance photovoltaic application. The diode achieves a near‐unity ideality factor of 1.001 along with an on/off ratio of ≈5.6 × 10³ at a low bias of 2 V, allowing for low‐power dynamic current rectification without signal decay or overshoot. When operated under a photovoltaic regime, the diode's dark current can be significantly suppressed. The presence of a built‐in electric field additionally gives rise to temporal short‐circuit current and open‐circuit voltage under zero external bias, indicative of its enriched functionalities for self‐powered photovoltaic and high signal‐to‐noise photodetection applications.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.     

黑磷纳米盘-层等离激元系统中的各向异性可调多阶强耦合

黑磷支持各向异性的表面等离激元,可用于设计具备更多功能的原理性器件。用时域有限差分法数值模拟了中红外到远红外波段基于黑磷的层-盘-层系统中不同等离激元模式之间的杂交行为。通过动态调节黑磷中的载流子浓度,可以实现两个晶格方向上强耦合现象的产生与控制。对不同模式间的耦合进行分析并计算,得到吸收光谱中的拉比分裂能最高可达42.9 meV。此外,还计算了偏振角度对各向异性强耦合的影响,其最高可以实现6个吸收频带。该模型可为构建未来在中远红外波段工作的基于二维材料紧凑型各向异性等离激元器件提供基础。     

Improving the electrical and mechanical behavior of electrically conductive paint by partial replacement of silver by carbon black

Partial replacement of silver particles by carbon black (low cost) in electrically conductive paint was found to decrease the electrical resistivity and increase the scratch resistance of the resulting thick film, which is for use in electrical interconnections. An effective carbon black content is 0.055 of the total filler volume. By using a total solid volume fraction of 0.1969 and a silane-propanol (1:1 by weight) solution as the vehicle, a paint that gives a thick film with resistivity 2 × 10⁻³ Ω·cm has been attained.     

基于Hessian矩阵的黑白棋盘格角点检测

针对棋盘格角点的检测,提出了一种运算速度快、定位精度高的Hessian矩阵子像素角点检测算法。简述了Hessian矩阵的原理、算法的执行流程和黑白棋盘格子像素坐标提取的基本方法。通过实验检测出了黑白棋盘格中的角点,得到了角点坐标,并利用二阶泰勒展开式得到了角点的子像素坐标。最后,在不同的噪声水平下,与Harris算法作比较,计算出提取误差与提取时间。实验证明,Hessian矩阵对黑白棋盘格角点检测的更加精确。该实验结果可应用于摄像相标定中。     

语音搜寻功能的学习对象管理系统设计研究——以大学语文为例

文章通过对系统的需求分析,构建了可应用于大学语文语言学习者的学习管理管理系统,并对系统的功能、整体架构、数据库等进行了设计,并采用Java Applet和Java Servlet技术,实现了对系统的访问和数据请求。同时在网页代码中添加语音搜索功能,使得语言学习者通过语音搜索的方式即可实现对不同学习内容的搜索。     

新型TFT-LCD黑矩阵的细线化研究

介绍了新型TFT-LCD黑矩阵细线化研究。在原有工艺设备的基础上,突破设备局限和工艺瓶颈,通过引入相掩膜技术和背面曝光设备,达到进一步减小黑矩阵线宽的效果。实验测试结果显示:在普通掩膜板设计上应用相位移掩膜板技术,降低透光区边缘衍射和散射现象,使曝光后黑矩阵线宽降低1.0~1.5μm。在原有工艺基础上添加背面曝光工艺,使黑矩阵材料在显影后进行背面曝光预固化,改善黑矩阵图形形貌,进一步减小黑矩阵线宽达到0.3~0.5μm。通过新工艺和新设备的引入和应用,黑矩阵线宽整体降低1.5~2.0μm,达到5.0~5.5μm,可以满足目前高PPI(单位面积像素个数)产品对透过率和对比度要求。     

聚合物PTC材料的研究与应用

对聚合物ＰＴＣ材料ＰＴＣ现象的几种解释作了介绍，着重讨论了其导电机制、影响电性能的主要因素及其在自动限温和过电流保护等领域的应用，简要说明了它的几种制作方法，并对当前该领域的发展趋势和最新研究开发进展作了较详细的介绍。     

ENIG焊点的失效机理及镀层重工方法研究

采用显微形貌、微观结构和元素成分分析等物理分析方法,以不同类型的化镍浸金(electroless nickel/immersion gold,ENIG)基板为对象,分析了其焊点在不同情形下的失效模式和失效机理,阐述了黑盘缺陷的主要失效特征,研究了具有黑盘缺陷的化镍浸金基板的重工工艺.研究结果显示,Ni层断裂表面单一的高P含量或轻微Ni层腐蚀不能作为黑盘缺陷的唯一依据,已形成良好金属间化合物(intermetallic compound,IMC)层的Ni层腐蚀位置的焊接界面仍具有良好的机械结合强度,采用喷锡工艺(hot air solder level,HASL)对具有黑盘缺陷的化镍浸金基板进行重新处理切实可行.     

利用反转实现理想对比度的密图分存

可视秘密共享的一个主要不足是重构后图像的对比度损失严重.提出了利用反转实现理想对比度的密图分存方案.编码轮数为m/h(上取整) (m和h分别是白像素加密所用基阵全部列和全白列的数量),采取像素块编码方式,每步都将m个连续相同的像素进行一次性加密编码,不产生像素扩展.对方案的正确性和安全性进行了证明,并与类似方案进行了对比分析和实验.该方案编码效率较高,系统容量较小.