Energy yield prediction errors and uncertainties of different photovoltaic models

Mathematical, empirical, and electrical models have long been implemented and used to predict the energy yield of many photovoltaic (PV) technologies. The purpose of this paper is to compare the annual DC energy yield prediction errors of four models namely the single‐point efficiency, single‐point efficiency with temperature correction, the Photovoltaic for Utility‐Scale Applications (PVUSA), and the one‐diode model, against outdoor measurements for different grid‐connected PV systems in Cyprus over a 4‐year evaluation period. The different models showed a wide variation of prediction errors, demonstrating a strong dependence between model performance and the different technologies. In particular, it was clearly shown that the application of temperature loss correction based on the manufacturer's temperature coefficients of power at maximum power point assisted in improving the energy yield prediction significantly especially for the crystalline silicon (c‐Si) technologies. In most cases, the best agreement between the modeled results and outdoor‐measured annual DC energy yield for mono‐crystalline silicon (mono‐c‐Si) and multi‐crystalline silicon (multi‐c‐Si) technologies was obtained using the one‐diode model. The energy yield for the thin‐film technologies was more accurately predicted using the PVUSA model with the exception of the copper‐indium‐gallium‐diselenide (CIGS) technology, which was best predicted using the single‐point efficiency with temperature correction and one‐diode models, thus demonstrating similar physical properties to c‐Si technologies. The paper further quantifies the combined uncertainties associated with the predicted energy yield as a function of the input parameters for the single‐point efficiency, single‐point efficiency with temperature correction, and the PVUSA models. Copyright © 2011 John Wiley & Sons, Ltd.     

热处理时间对氧化钒薄膜相变性能的影响

采用直流磁控溅射的方法在普通玻璃上制备了低价的氧化钒薄膜,在氧气和氩气混合气氛中,对所制备的薄膜进行不同时间的热处理,得到具有相变特性的VO2薄膜。分别利用X射线衍射(XRD)和场发射扫描电镜(SEM)分析了薄膜的组分、结晶结构和表面形貌,利用四探针法测试了薄膜的电阻。结果表明:热处理前的氧化钒薄膜主要成分为V2O3,经过热氧化处理后,低价的氧化钒被氧化,薄膜中VO2含量增加,薄膜发生金属-半导体相变,其中450℃、2h为最佳处理参数,其电阻相变幅度超过2个数量级,薄膜的相变温度仅为30℃。     

Improving the electrical and mechanical behavior of electrically conductive paint by partial replacement of silver by carbon black

Partial replacement of silver particles by carbon black (low cost) in electrically conductive paint was found to decrease the electrical resistivity and increase the scratch resistance of the resulting thick film, which is for use in electrical interconnections. An effective carbon black content is 0.055 of the total filler volume. By using a total solid volume fraction of 0.1969 and a silane-propanol (1:1 by weight) solution as the vehicle, a paint that gives a thick film with resistivity 2 × 10⁻³ Ω·cm has been attained.     

Hybrid film of chemically modified graphene and vapor-phase-polymerized PEDOT for electronic nose applications

A hybrid of graphene and conducting polymer holds great potential as the active materials for high performance chemical sensor application. In this work, a thin hybrid film of reduced graphene oxide (RG-O) and poly(3,4-ethylenedioxythiophene) (PEDOT) was fabricated by means of vapor phase polymerization and explored as active material for chemical sensors. The chemical sensors based on hybrid film of RG-O and PEDOT are capable of detecting electrical signals caused by the absorption of trace levels of different analyte vapors with high sensitivity, selectivity and fast response.     

红外接收用PIN硅光电探测器研究

PN二极管是一种常用的光电探测器,其中PIN光电二极管因其体积小、噪声低、响应速度快、光谱响应性能好等特点已作为一个标准件广泛应用于红外遥控接收领域。文章基于半导体材料的光吸收特性和光电效率转换原理,同时结合减反射膜理论,对PIN光电二极管进行研究,通过衬底材料的合理选择,对减反射膜折射率及厚度进行对比实验,验证了SiN膜层较SiO2膜有着更为良好的减反射效果,可以有效提升光敏器件的光电转换效率,同条件下器件的光生电流得到提升,为今后光电器件的生产、开发应用提供了参考。     

基于PVDF压电薄膜的超声波测厚技术探究

开展了基于PVDF压电薄膜的超声波测厚技术研究,通过分析超声波是弹性机械波的一种,在同种均匀介质中,其传播声速一定,当从一种介质进入另一种介质时,在结构表面会发生反射作用。因此,我们可以认为超声波从被测试件的表面发出到接收到另一底面反射波信号的传播间隔时间与被测厚度值成正比关系,从而测量厚度的问题转化成测量超声波在试件中传播时间的问题。基于PVDF压电薄膜的超声波测厚技术将为快速便捷的测量厚度问题提供一种新的手段,并为将来测厚技术系统的开发奠定技术基础,具有工程应用价值。     

溅射气压对氧化镓薄膜光学特性的影响

采用射频磁控溅射法在石英衬底上制备了氧化镓(Ga2O3)薄膜.利用X射线衍射仪和紫外-可见-红外分光光度计分别对Ga2O3薄膜的晶体结构和光学带隙进行了表征,并在室温下测量了 Ga2O3薄膜的光致发光(PL)谱.结果表明:制备的Ga2O3薄膜呈非晶态.吸收边随着溅射气压的增加先蓝移后红移,光学带隙值范围为5.06～5.37 eV,溅射气压为1 Pa时,制备的Ga2O3薄膜具有最大的光学带隙.在325 nm激光激发下,400 nm附近和525 nm附近处出现与缺陷能级相关的发光峰.     

Enhanced Electron Mobility Due to Dopant‐Defect Pairing in Conductive ZnMgO

The increase of the band gap in Zn_1‐xMg_xO alloys with added Mg facilitates tunable control of the conduction band alignment and the Fermi‐level position in oxide‐heterostructures. However, the maximal conductivity achievable by doping decreases considerably at higher Mg compositions, which limits practical application as a wide‐gap transparent conductive oxide. In this work, first‐principles calculations and material synthesis and characterization are combined to show that the leading cause of the conductivity decrease is the increased formation of acceptor‐like compensating intrinsic defects, such as zinc vacancies (V_Zn), which reduce the free electron concentration and decrease the mobility through ionized impurity scattering. Following the expectation that non‐equilibrium deposition techniques should create a more random distribution of oppositely charged dopants and defects compared to the thermodynamic limit, the paring between dopant Ga_Zn and intrinsic defects V_Zn is studied as a means to reduce the ionized impurity scattering. Indeed, the post‐deposition annealing of Ga‐doped Zn_0.7Mg_0.3O films grown by pulsed laser deposition increases the mobility by 50% resulting in a conductivity as high as σ = 475 S cm^‐1.     

All‐Solution‐Processed Indium‐Free Transparent Composite Electrodes based on Ag Nanowire and Metal Oxide for Thin‐Film Solar Cells

Fully solution‐processed Al‐doped ZnO/silver nanowire (AgNW)/Al‐doped ZnO/ZnO multi‐stacked composite electrodes are introduced as a transparent, conductive window layer for thin‐film solar cells. Unlike conventional sol–gel synthetic pathways, a newly developed combustion reaction‐based sol–gel chemical approach allows dense and uniform composite electrodes at temperatures as low as 200 °C. The resulting composite layer exhibits high transmittance (93.4% at 550 nm) and low sheet resistance (11.3 Ω sq^‐1), which are far superior to those of other solution‐processed transparent electrodes and are comparable to their sputtered counterparts. Conductive atomic force microscopy reveals that the multi‐stacked metal‐oxide layers embedded with the AgNWs enhance the photocarrier collection efficiency by broadening the lateral conduction range. This as‐developed composite electrode is successfully applied in Cu(In_1‐x,Ga_x)S₂ (CIGS) thin‐film solar cells and exhibits a power conversion efficiency of 11.03%. The fully solution‐processed indium‐free composite films demonstrate not only good performance as transparent electrodes but also the potential for applications in various optoelectronic and photovoltaic devices as a cost‐effective and sustainable alternative electrode.