聚氨酯-聚丙烯酸酯共聚乳液的成膜和性能

通过XPS和接触角测试研究了聚氨酯-聚丙烯酸酯共聚乳液在不同基材上的成膜情况，并对共聚胶膜的耐水性和附着力进行了考察．由于该共聚乳液同时存在着亲水组分和疏水组分，所以它在不同的基材上成膜可导致其膜表面的组成成分不同，因而导致其耐水性和附着力也随基材而异。结果表明，亲水性的聚氨酯组分均富集于胶膜内部，但胶膜底层聚氨酯组分的含量却随基材的不同而不同。在憎水且表面张力较高的基材上，共聚胶膜的耐水性良好；共聚胶膜的附着力在表面张力较高的基材上也良好。     

Kinetics of DyNi2 film growth by electrochemical implantation

Electrochemical implantation was performed at Ni electrodes to form DyNi₂ films at 0.55 V (vs. Li⁺/Li), 0.62 V, and 0.70 V for 0.5-5.0 h in a molten LiCl-KCl-DyCl₃ (0.50 mol%) system at 700 K. It was found that the DyNi₂ films grew linearly with time with coulomb efficiency of about 100%. The obtained growth rates were higher at more negative potentials, i.e., 0.47 μm min⁻¹ at 0.55 V, 0.32 μm min⁻¹ at 0.62 V, and 0.14 μm min⁻¹ at 0.70 V. On the analogy of the metal oxide growth, the observed rapid and linear growth of DyNi₂ films may be explained by the existence of the outer and inner DyNi₂ layers.     

基于SPM技术的纳米信息存储薄膜的研究进展

扫描探针显微技术SPM可以在原子或分子尺度上对表面进行表征和修饰，应用SPM技术可以在薄膜表面形成纳米级的信息点阵，特别适合发展超高密度的信息存储，是一种非常有希望代替传统磁存储，光存储的纳米级存储技术，本文介绍了纳米信息存储薄膜的研究进展，并对其制备技术和读写机制进行了初步的探讨。     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

聚四氟乙烯薄膜压敏胶粘带的研制

主要介绍了聚四氟乙烯薄膜和有机硅压敏胶制造压敏胶粘带的方法。     

溅射靶材的应用及制备初探

随着电子及信息产业突飞猛进的发展，世界溅射靶材的需求越来越多，本文介绍了靶材的发展概况、分类和应用情况，以及靶材的特性要求．探讨Ni-Cr合金靶材的制备工艺，结果表明，产品能满足靶材特性要求。     

钇铁石榴石薄膜材料的光吸收谱及Bi,Al掺入对谱的影响研究

采用单离子晶场跃迁模型，拟合出钇铁石榴石（ＹＩＧ）薄膜材料的光吸收谱，与实验谱吻合得较好。从实验和理论上分析了（ＢＩＡＩ）ＹＩＧ 薄膜材料的光吸收谱，结果表明，Ａｌ３＋离子的作用如同稀释剂一样，减小了光吸收，Ｂｉ３＋离子由于其强的自旋轨道耦合作用，增大了跃迁振子强度和跃迁线宽，从而增大了光吸收损耗，在此基础上所作的（ＢｉＡｌ）ＹＩＧ的理论谱与实验谱符合得较好。     

薄膜微型电源

介绍了新型的薄膜微型电源的工作原理、结构及制造工艺。     

High-pressure dc sputtering of High-Tc BPSCCO thin films withTc(0) above 100 K

High-T _c Bi(Pb)-Sr-Ca-Cu-O thin films have been made on single-crystal MgO substrates using high-pressure dc sputtering technique. X-ray studies confirm the crystallinity and highly oriented structure withc-axis perpendicular to the substrate. By optimizing the annealing schedule the formation of the high-T _c phase is stabilized. The best film exhibited superconducting transition temperature with zero-resistance temperature,T _c(0), as high as 101 K. Temperature dependence ofJ _c indicates the presence of Josephson-type weak links.     

Analysis of adhesive bonded composite lap joints with transverse stitching

The effect of transverse stitching on the stresses in the adhesive is investigated using an adhesive sandwich model with nonlinear adhesive properties and a transverse stitching model for adhesive bonded composite single-lap and double-lap joints. Numerical results indicate that, among all stitching parameters, thread pretension and stitch density have significant effect on the peel stresses in the adhesive; increase in the thread pretension and the stitch density leads to a decrease in peel stress in the adhesive, while an increase in other parameters generally results in a negligible reduction in peel stress. The effect of stitching was found to be negligible on the shear stresses in the adhesive. Thus it is concluded that stitching is effective for the joints where peel stresses are critical and ineffective for those where shear stresses are critical.