The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.     

Effect of Post Annealing on the Microstructure and Magnetic Properties of NdFeB/α-Fe/NdFeB Thin Films

A series of nanocomposite thin films, composed of Nd2Fe14B and α-Fe, has been prepared by DC-magnetron sputtering combined ion beam sputtering onto Si (100) substrates. The effects of post annealing on the microstructure and magnetic properties of [NdFeB/α-Fe/NdFeB]-type thin films have been investigated. The X-ray diffraction (XRD) study showed that annealing of the films for 30min at temperatures 550,600,650,700℃ resulted in the appearance of diffraction peaks, characteristic for Nd2Fe14B tetragonal structure, α-Fe and Nd2O3 phases. The investigation using the Vibrating Sample Magnetometer (VSM) with a maximum applied field of 2 T indicated that with the increase of the annealing temperature, the magnetic properties of the multilayer films were improved and reached peak value at 650℃ (Hci=41.72kA·m-1, Mr/Ms=0.4, (BH)max=30.35kJ·m-3), after which the magnetic properties were decreased greatly. Along with the increase of the thickness of α-Fe layer from Tα-Fe16nm, the coercivity Hci, saturation magnetization Ms, and remanence ratio Mr/Ms all declined. As the Atomic Force Microscope (AFM) indicated, after being annealed at 650℃ for 30min, the sample was showed fine surface morphology with grain size 60nm≤dα-Fe≤80nm and 100nm≤dNdFeB≤150nm.     

Characterization of CuInS2 thin films for solar cells prepared by spray pyrolysis

We have made a study of the chemical composition, the electrical, the optical and the structural properties of polycrystalline CuInS₂ thin films prepared by spray pyrolysis to be used for thin film solar cells. These films were deposited starting from aqueous solutions with different chemical compositions ([Cu]/[In] and [S]/[Cu] ratios) and at different substrate temperatures. In all cases, the material is p-type with grains preferentially oriented in the (112) direction of the sphalerite structure. The electro-optical properties show a very strong dependence on the [Cu]/[In] ratio in the solution. Films with copper excess have smaller resistivity and better crystallinity than those which are stoichiometric or have indium excess. The results obtained in this work show the possibility of having CuInS₂ thin films with a wide range of resistivity, a fact that could be important for making solar cells based on this material.     

应用铟源的反应蒸发制备In2O3透明导电膜

本工作说明，在低压氧气氛中。应用铟源的反应蒸发很容易淀积高质量的Ｉｎ２Ｏ３透明导电膜．旦然没有使用锡杂质，但所得膜的性能可以和最好的掺锡的Ｉｎ２Ｏ３膜相比．膜电阻率达２～３×１０￣４Ω·ｃｍ，可见光透过率超过９０％，并且膜生长速率高达２１９／ｍｉｎ．文章对成膜过程作了分析，报道了膜的最佳淀积条件，对由于偏离最佳淀积参数而导致的异常膜的形成机制也进行了讨论．     

WO3 pillar-type and helical-type thin film structures to be used in microbatteries

In the present study WO₃ thin films were deposited by sputtering onto ITO glass, W/ITO and Si substrates by using the glancing angle deposition (GLAD) technique, with the objective of applying these materials in electrochemical intercalation devices. The thin films microstructure and electrochemical behavior were determined through scanning electron microscopy (SEM) and cycling at constant current with potential limitation. By mainly adjusting the substrate holder speed rotation, pillar-type and helical-type structures were obtained under high and low speed rotation levels, respectively. The electrochemical results showed that the best charge capacity performance was obtained for the WO₃/W/ITO films with pillar-type structures, which are more porous.     

Heat transfer in YBaCuO thin film/sapphire substrate system

The thermal boundary resistance at the YBaCuO thin film/Al₂O₃ substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.We are grateful to A. Elantev for helpful discussion. We acknowledge the financial support of the Russian Scientific Council on the HTS problem (Project No. 90462).     

交流量热法测量SiO2薄膜的热扩散率

介绍了交流量热法测量薄膜热扩散率的原理和系统组建，用脉宽为纳秒级的超短激光脉冲作为热源，测量了Si衬底上厚度为100nm和500nm的SiO2薄膜水平方向上的热扩散率，实验结果表明该结构的热扩散率比SiO2体材料的要小，并且随着SiO2层厚度的减小，热扩散率也减少。     

FeSiB薄膜的巨磁阻抗和应力阻抗效应研究

软磁材料中存在巨磁阻抗 (giantmagneto impedance ,GMI)效应以及与之相同来源的应力阻抗 (stress impedance ,SI)效应 ,利用这两种效应可以制成具有高灵敏度的微型化的磁场和应力 应变传感器。本文基于传感器的实际应用 ,对图形化的、较大磁致伸缩的FeSiB单层和多层薄膜的巨磁阻抗和应力阻抗效应中频率和退火的影响进行了研究。结果表明 ,对于两种效应 ,经过退火处理的单层和多层膜均可在较低的频率下得到较高的灵敏度 ,而多层膜中的应力阻抗效应将为新型高灵敏传感器的设计和研制开辟一条崭新的途径     

液晶光阀用ZnSSe薄膜的光电特性研究

用分子束外延法(MBE),在铟锡氧化物(ITO)导电玻璃衬底上生长了ZnSSe薄膜,详细研究了薄膜的光电特性.通过控制反应时的生长参数,制备出了符合紫外液晶光阀设计要求的光导层薄膜.室温下,该薄膜光谱响应截止边的响应度为0.01A/W,紫外/可见光响应对比度大于103.薄膜的暗电阻率随薄膜晶粒增大而减小,在衬底温度为2900C时,所获得的ZnSSe薄膜具有4.3×1011Ω@cm的暗电阻率.频率从40Hz到4000Hz的交流特性测试,也证实该薄膜符合器件紫外成像的工作要求.